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PDF TLP733F Data sheet ( Hoja de datos )
| Número de pieza | TLP733F | |
| Descripción | GaAs Ired & Photo−Transistor | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TLP733F,TLP734F
TOSHIBA Photocoupler GaAs Ired & Photo−Transistor
TLP733F,TLP734F
Office Machine
Switching Power Supply
Unit in mm
The TOSHIBA TLP733F and TLP734F consists of a photo−transistor
optically coupled to a gallium arsenide infrared emitting diode in a six
lead plastic DIP.
All parameters are tested to the specification of TLP733 and TLP734.
(both condition and limits)
· Collector−emitter voltage: 55 V (min.)
· Current transfer ratio: 50% (min.)
Rank GB: 100% (min.)
· UL recognized: UL1577, file no. E67349
· BSI approved: BS EN60065: 1994
Certificate no. 7364
BS EN60950: 1992
Certificate no. 7365
· SEMKO approved: SS4330784
Certificate no. 9325163, 9522142
· Isolation voltage: 4000 Vrms (min.)
· Option (D4) type
VDE approved: DIN VDE0884 / 06.92,
Certificate no. 74286, 91808
Maximum operating insulation voltage: 890, 1130 VPK
Highest permissible over voltage: 6000, 8000 VPK
TOSHIBA
11−7A802
Weight: 0.42 g
Pin Configurations (top view)
(Note) When a VDE0884 approved type is needed,
please designate the “ Option (D4) ”
· Creepage distance: 8.0mm (min.)
Clearance: 8.0mm (min.)
Internal creepage path: 4.0mm (min.)
Insulation thickness: 0.5mm (min.)
· Conforming safety standards:
DIN 57 804. VDE0804 / 1.83
DIN IEC65 / VDE0860 / 8.81
DIN IEC380 / VDE0806 / 8.81
DIN IEC435 / VDE0805 / draft nov. 84
DIN IEC601T1 / VDE0750T1 / 5.82
BS7002: 1989 (EN60950)
1 2002-09-25
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet TLP733F.PDF ] | |
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