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PDF TLP734 Data sheet ( Hoja de datos )
| Número de pieza | TLP734 | |
| Descripción | GaAs Ired&Photo−Transistor | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TLP733,TLP734
TOSHIBA Photocoupler GaAs Ired&Photo−Transistor
TLP733, TLP734
Office Machine
Household Use Equipment
Solid State Relay
Switching Power Supply
Unit in mm
The TOSHIBA TLP733 and TLP734 consist of a photo−transistor
optically coupled to a gallium arsenide infrared emitting diode in a six
lead plastic DIP.
TLP734 is no−base internal connection for high−EMI environments.
· Collector−emitter voltage: 55 V (min.)
· Current transfer ratio: 50% (min.)
Rank GB: 100% (min.)
· UL recognized: UL1577, file no. E67349
· BSI approved: BS EN60065: 1994
Certificate no. 7364
BS EN60950: 1992
Certificate no. 7365
· SEMKO approved: SS4330784
Certificate no. 9325163, 9522142
· Isolation voltage: 4000 Vrms (min.)
· Option (D4) type
VDE approved: DIN VDE0884 / 06.92,
Certificate no. 74286, 91808
Maximum operating insulation voltage: 630, 890 VPK
Highest permissible over voltage: 6000, 8000 VPK
(Note) When a VDE0884 approved type is needed,
please designate the “Option (D4)”
· Creepage distance
7.62 mm pich
standard type
: 7.0 mm (min.)
Clearance
: 7.0 mm (min.)
Internal creepage path : 4.0 mm (min.)
Insulation thickness : 0.5 mm (min.)
10.16 mm pich
TLP×××F type
8.0 mm (min.)
8.0 mm (min.)
4.0 mm (min.)
0.5 mm (min.)
TOSHIBA
Weight: 0.42 g
11−7A8
Pin Configurations (top view)
TLP733
1
2
3
61
52
43
TLP734
6
5
4
1: Anode
2: Cathode
3: Nc
4: Emitter
5: Collector
6: Base
1: Anode
2: Cathode
3: Nc
4: Emitter
5: Collector
6: Nc
1 2002-09-25
1 page  
Fig. 1 Switching time test circuit
IF
RBE
VCC
RL
VCE
IF
VCE
tON
TLP733,TLP734
ts
4.5V
0.5V
tOFF
5 2002-09-25
5 Page 
This datasheet has been download from:
www.datasheetcatalog.com
Datasheets for electronics components.
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet TLP734.PDF ] | |
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