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부품번호 | TIP106 기능 |
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기능 | Plastic Medium-Power Complementary Silicon Transistors | ||
제조업체 | ON Semiconductor | ||
로고 | |||
전체 7 페이지수
TIP100, TIP101, TIP102
(NPN); TIP105, TIP106,
TIP107 (PNP)
Plastic Medium-Power
Complementary Silicon
Transistors
Designed for general−purpose amplifier and low−speed switching
applications.
Features
• High DC Current Gain −
hFE = 2500 (Typ) @ IC
= 4.0 Adc
• Collector−Emitter Sustaining Voltage − @ 30 mAdc
VCEO(sus) = 60 Vdc (Min) − TIP100, TIP105
= 80 Vdc (Min) − TIP101, TIP106
= 100 Vdc (Min) − TIP102, TIP107
• Low Collector−Emitter Saturation Voltage −
VCE(sat) = 2.0 Vdc (Max) @ IC
= 3.0 Adc
= 2.5 Vdc (Max) @ IC = 8.0 Adc
• Monolithic Construction with Built−in Base−Emitter Shunt Resistors
• Pb−Free Packages are Available*
www.onsemi.com
DARLINGTON 8 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
60−80−100 VOLTS, 80 WATTS
MARKING
DIAGRAM
12 3
4
TO−220AB
CASE 221A
STYLE 1
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
TIP10xG
AYWW
TIP10x
x
A
Y
WW
G
= Device Code
= 0, 1, 2, 5, 6, or 7
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information on page 3 of
this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2014
November, 2014 − Rev. 14
1
Publication Order Number:
TIP100/D
TIP100, TIP101, TIP102 (NPN); TIP105, TIP106, TIP107 (PNP)
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1, MUST BE FAST RECOVERY TYPE, eg:
VCC
- 30 V
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
RC
TUT
SCOPE
V2
approx
RB
+ 8.0 V
0
51 D1
≈ 8.0 k ≈ 120
V1
approx
-12 V
25 ms
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0%
+ 4.0 V
for td and tr, D1 is disconnected
and V2 = 0
For NPN test circuit reverse all polarities.
Figure 3. Switching Times Test Circuit
5.0
3.0 ts
2.0
PNP
NPN
1.0 tf
0.7
0.5
0.3
0.2 VCC = 30 V
IC/IB = 250
0.1 IB1 = IB2
0.07 TJ = 25°C
0.05
td @ VBE(off) = 0 V
0.1 0.2 0.3 0.5 0.7 1.0
tr
2.0 3.0 5.0 7.0
IC, COLLECTOR CURRENT (AMP)
10
Figure 4. Switching Times
1.0
0.7 D = 0.5
0.5
0.3 0.2
0.2
0.1
0.1
0.07 0.05
0.05 0.02
0.03
0.02 0.01
0.01
0.01 0.02
SINGLE PULSE
0.05 0.1
0.2
ZqJC(t) = r(t) RqJC
RqJC = 1.56°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) ZqJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.5 1.0
2.0 5.0
t, TIME (ms)
10
20
Figure 5. Thermal Response
50 100 200
500 1.0 k
20
10 5 ms
5.0
2.0
1.0
0.5
0.2
0.1
0.05
0.02
1.0
100 ms
1 ms
TJ = 150°C
BONDING WIRE LIMITED
d
c
THERMALLY LIMITED @ TC = 25°C
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW RATED VCEO
TIP100, TIP105
TIP101, TIP106
TIP102, TIP107
2.0 5.0 10 20
50
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
100
Figure 6. Active−Region Safe Operating Area
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 6 is based on TJ(pk) = 150°C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
< 150°C. TJ(pk) may be calculated from the data in Figure 5.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown
www.onsemi.com
4
4페이지 TIP100, TIP101, TIP102 (NPN); TIP105, TIP106, TIP107 (PNP)
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AH
BF
Q
H
Z
4
1 23
A
K
L
V
G
N
D
−T−
SEATING
PLANE
C
TS
U
R
J
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
INCHES
DIM MIN MAX
A 0.570 0.620
B 0.380 0.415
C 0.160 0.190
D 0.025 0.038
F 0.142 0.161
G 0.095 0.105
H 0.110 0.161
J 0.014 0.024
K 0.500 0.562
L 0.045 0.060
N 0.190 0.210
Q 0.100 0.120
R 0.080 0.110
S 0.045 0.055
T 0.235 0.255
U 0.000 0.050
V 0.045 ---
Z --- 0.080
STYLE 1:
PIN 1.
2.
3.
4.
BASE
COLLECTOR
EMITTER
COLLECTOR
MILLIMETERS
MIN MAX
14.48 15.75
9.66 10.53
4.07 4.83
0.64 0.96
3.61 4.09
2.42 2.66
2.80 4.10
0.36 0.61
12.70 14.27
1.15 1.52
4.83 5.33
2.54 3.04
2.04 2.79
1.15 1.39
5.97 6.47
0.00 1.27
1.15 ---
--- 2.04
ON Semiconductor and the
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
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Phone: 81−3−5817−1050
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7
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
TIP100/D
7페이지 | |||
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부품번호 | 상세설명 및 기능 | 제조사 |
TIP100 | Monolithic Construction | SemiHow |
TIP100 | Darlington NPN Power Transistors | TAITRON |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |