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부품번호 | TIP110 기능 |
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기능 | DARLINGTON 2 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS | ||
제조업체 | Motorola Semiconductors | ||
로고 | |||
전체 6 페이지수
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by TIP110/D
Plastic Medium-Power
Complementary Silicon Transistors
. . . designed for general–purpose amplifier and low–speed switching applications.
• High DC Current Gain —
hFE = 2500 (Typ) @ IC = 1.0 Adc
• Collector–Emitter Sustaining Voltage — @ 30 mAdc
VCEO(sus) = 60 Vdc (Min) — TIP110, TIP115
VCEO(sus) = 80 Vdc (Min) — TIP111, TIP116
VCEO(sus) = 100 Vdc (Min) — TIP112, TIP117
• Low Collector–Emitter Saturation Voltage —
VCE(sat) = 2.5 Vdc (Max) @ IC = 2.0 Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΕ Monolithic Construction with Built–in Base–Emitter Shunt Resistors
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΕ TO–220AB Compact Package
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ*MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎPeak
Symbol
VCEO
VCB
VEB
IC
TIP110,
TIP115
60
60
TIP111,
TIP116
80
80
5.0
2.0
4.0
TIP112,
TIP117
100
100
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation @ TC = 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDerate above 25_C
IB
PD
50
50
0.4
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation @ TA = 25_C
Derate above 25_C
PD
2.0
0.016
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎUnclamped Inductive Load Energy —
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎFigure 13
E
25
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
TJ, Tstg
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristics
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Case
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Ambient
– 65 to + 150
Symbol
RθJC
RθJA
Max
2.5
62.5
Unit
Vdc
Vdc
Vdc
Adc
mAdc
Watts
W/_C
Watts
W/_C
mJ
_C
Unit
_C/W
_C/W
TA TC
NPN
TIP110
TIP111*
TIP112*
PNP
TIP115
TIP116*
TIP117*
*Motorola Preferred Device
DARLINGTON
2 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
60 – 80 – 100 VOLTS
50 WATTS
CASE 221A–06
TO–220AB
3.0 60
2.0 40
1.0 20
TC
TA
00
0 20 40 60 80 100 120
T, TEMPERATURE (°C)
Figure 1. Power Derating
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
140 160
1
TIP110 TIP111 TIP112 TIP115 TIP116 TIP117
NPN
TIP110, 111, 112
6.0 k
TJ = 125°C
4.0 k
3.0 k
2.0 k 25°C
VCE = 3.0 V
– 55°C
1.0 k
800
600
6.0 k
4.0 k
3.0 k
2.0 k
1.0 k
800
600
PNP
TIP115, 116, 117
TJ = 125°C
25°C
VCE = 3.0 V
– 55°C
400
300
0.04 0.06
0.1 0.2
0.4 0.6 1.0
IC, COLLECTOR CURRENT (AMP)
2.0 4.0
400
300
0.04 0.06
Figure 8. DC Current Gain
0.1 0.2 0.4 0.6 1.0
IC, COLLECTOR CURRENT (AMP)
2.0
4.0
3.4
3.0
IC =
0.5 A
2.6
1.0 A 2.0 A
4.0 A
TJ = 25°C
3.4
3.0
IC =
2.6 0.5 A 1.0 A
2.0 A
TJ = 25°C
4.0 A
2.2 2.2
1.8 1.8
1.4 1.4
1.0
0.6
0.1 0.2
1.0
0.5 1.0 2.0 5.0 10 20
IB, BASE CURRENT (mA)
50 100
0.6
0.1 0.2
0.5 1.0 2.0 5.0 10 20
IB, BASE CURRENT (mA)
Figure 9. Collector Saturation Region
50 100
2.2
TJ = 25°C
1.8
1.4 VBE(sat) @ IC/IB = 250
1.0
VCE(sat) @ IC/IB = 250
0.6
VBE @ VCE = 3.0 V
2.2
TJ = 25°C
1.8
VBE(sat) @ IC/IB = 250
1.4
1.0
VCE(sat) @ IC/IB = 250
0.6
VBE @ VCE = 3.0 V
0.2
0.04 0.06
0.1 0.2 0.4 0.6 1.0
IC, COLLECTOR CURRENT (AMP)
2.0 4.0
0.2
0.04 0.06
Figure 10. “On” Voltages
0.1 0.2 0.4 0.6 1.0
IC, COLLECTOR CURRENT (AMP)
2.0
4.0
4 Motorola Bipolar Power Transistor Device Data
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
TIP110 | Silicon NPN Darlington Power Transistor | MCC |
TIP110 | Power Transistors | RECTRON |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |