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Datasheet P80C32 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | P80C32 | 80C51 8-bit microcontroller family 4K/8K/16K/32K ROM/OTP 128B/256B RAM low voltage 2.7 to 5.5 V/ low power/ high speed 30/33 MHz INTEGRATED CIRCUITS
80C31X2/32X2 80C51X2/52X2/54X2/58X2 87C51X2/52X2/54X2/58X2 80C51 8-bit microcontroller family
4K/8K/16K/32K ROM/OTP 128B/256B RAM low voltage (2.7 to 5.5 V), low power, high speed (30/33 MHz)
Preliminary data 2001 Sep 24
Philips Semiconductors
Philips Semiconductors
Prelimina |  NXP Semiconductors | controller |
| 2 | P80C32 | CMOS 0 to 44 MHz Single Chip 8bit Microntroller 80C32/80C52
CMOS 0 to 44 MHz Single Chip 8–bit Microntroller
Description
TEMIC’s 80C52 and 80C32 are high performance CMOS versions of the 8052/8032 NMOS single chip 8 bit µC. The fully static design of the TEMIC 80C52/80C32 allows to reduce system power consumption by bringing the clock freque |  TEMIC Semiconductors | cmos |
| 3 | P80C321 | (P80Cxx1) CMOS SINGLE CHIP MICROCONTROLLER
www.Da |  AMD | controller |
| 4 | P80C32SBAA | 80C51 8-bit microcontroller family 8K.64K/256.1K OTP/ROM/ROMless/ low voltage 2.7V.5.5V/ low power/ high speed 33 MHz INTEGRATED CIRCUITS
8XC52/54/58/80C32 8XC51FA/FB/FC/80C51FA 8XC51RA+/RB+/RC+/RD+/80C51RA + 80C51 8-bit microcontroller family
8K–64K/256–1K OTP/ROM/ROMless, low voltage (2.7V–5.5V), low power, high speed (33 MHz)
Product specification Supersedes data of 1998 Jun 04 IC20 Data Handbook 1999 Apr | NXP Semiconductors | controller |
| 5 | P80C32SBBB | 80C51 8-bit microcontroller family 8K.64K/256.1K OTP/ROM/ROMless/ low voltage 2.7V.5.5V/ low power/ high speed 33 MHz INTEGRATED CIRCUITS
8XC52/54/58/80C32 8XC51FA/FB/FC/80C51FA 8XC51RA+/RB+/RC+/RD+/80C51RA + 80C51 8-bit microcontroller family
8K–64K/256–1K OTP/ROM/ROMless, low voltage (2.7V–5.5V), low power, high speed (33 MHz)
Product specification Supersedes data of 1998 Jun 04 IC20 Data Handbook 1999 Apr | NXP Semiconductors | controller |
P80 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | P8008BD | N-Channel Enhancement Mode MOSFET P8008BD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
80V 80mΩ @VGS = 10V
ID 15A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 80
Gate-Source Voltage
VGS ±25
Continuous Drai  UNIKC mosfet | | |
| 2 | P8008BDA | N-Channel Enhancement Mode MOSFET P8008BDA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
80V 68mΩ @VGS = 10V
ID 16A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 80
Gate-Source Voltage
VGS ±25
Continuous Dra UNIKC mosfet | | |
| 3 | P8008BV | N-Channel Enhancement Mode MOSFET P8008BV
N-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
80V 80mΩ @VGS = 10V
ID 3A
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 80
Gate-Source Voltage
VGS ±25
Conti UNIKC mosfet | | |
| 4 | P8008BVA | N-Channel Enhancement Mode MOSFET P8008BVA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
80V 68mΩ @VGS = 10V
ID 3.5A
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 80
Gate-Source Voltage
VGS ±25
Continuous Dra UNIKC mosfet | | |
| 5 | P8008HV | N-Channel Enhancement Mode MOSFET P8008HV
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
80V 80mΩ @VGS = 10V
ID 4A
SOP- 08
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 80
Gate-Source Voltage
VGS ±25
Continuous Drai UNIKC mosfet | | |
| 6 | P8008HVA | Dual N-Channel Enhancement Mode MOSFET P8008HVA
Dual N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
80V 68mΩ @VGS = 10V
ID 3.2A
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 80
Gate-Source Voltage
VGS ±25
Continuou UNIKC mosfet | | |
| 7 | P800A | SILICON RECTIFIER DIODES P800A - P800K
PRV : 50 - 800 Volts Io : 8.0 Amperes
FEATURES :
* * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Pb / RoHS Free
SILICON RECTIFIER DIODES D6
0.360 (9.1) 0.340 (8.6)
1.00 (25.4) MIN.
0.360 (9.1) 0.340 (8.  SynSemi rectifier | |
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