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부품번호 | TIP49 기능 |
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기능 | POWER TRANSISTORS NPN SILICON | ||
제조업체 | Motorola Semiconductors | ||
로고 | |||
전체 6 페이지수
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by TIP47/D
High Voltage NPN Silicon
Power Transistors
. . . designed for line operated audio output amplifier, Switchmode power supply
drivers and other switching applications.
• 250 V to 400 V (Min) — VCEO(sus)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΕ 1 A Rated Collector Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΕ Popular TO–220 Plastic Package
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous
Peak
Symbol
VCEO
VCB
VEB
IC
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ@ TC = 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDerate above 25_C
IB
PD
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation
@ TA = 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDerate above 25_C
PD
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎUnclamped Inducting Load
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEnergy (See Figure 8)
E
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction
Temperature Range
TJ, Tstg
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Case
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Ambient
TIP47
250
350
TIP48 TIP49
300 350
400 450
5.0
1.0
2.0
0.6
TIP50
400
500
40
0.32
2.0
0.016
20
– 65 to + 150
Symbol
RθJC
RθJA
Max
3.125
62.5
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/_C
Watts
W/_C
mJ
_C
Unit
_C/W
_C/W
TA TC
4 40
TIP47 *
TIP49*
TIP48 *
TIP50*
*Motorola Preferred Device
1.0 AMPERE
POWER TRANSISTORS
NPN SILICON
250 – 300 – 350 – 400 VOLTS
40 WATTS
CASE 221A–06
TO–220AB
3 30
2 20
1 10
TC
TA
00
0 20 40 60 80 100 120 140 160
TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
1
TIP47 TIP49 TIP48 TIP50
VCE MONITOR
INPUT
MJE171
50
RBB1 =
150 Ω
50
VBB1 = 10 V
RBB2 =
100 Ω
VBB2 =
0
TUT 100 mH
VCC = 20 V
IC MONITOR
RS =
0.1 Ω
Note A: Input pulse width is increased until ICM = 0.63 A.
INPUT
VOLTAGE
0V
–5 V
0.63 A
COLLECTOR
CURRENT
0V
VCER
COLLECTOR
VOLTAGE
10 V
VCE(sat)
Figure 8. Inductive Load Switching
tw ≈ 3 ms
(SEE NOTE A)
100 ms
200
100
TJ = 150°C
60
40 25°C
VCE = 10 V
20
– 55°C
10
6.0
4.0
2.0
0.02
0.04 0.06 0.1 0.2 0.4 0.6
IC, COLLECTOR CURRENT (AMPS)
Figure 9. DC Current Gain
1.0
2.0
1.4
1.2
1.0
VBE(sat) @ IC/IB = 5.0 V
0.8
0.6 VBE(on) @ VCE = 4 V
0.4
0.2
0
0.02
VCE(sat) @ IC/IB = 5.0 V
0.04 0.06 0.1
0.2
0.4 0.6
IC, COLLECTOR CURRENT (AMPS)
Figure 10. “On” Voltages
1.0
2.0
4 Motorola Bipolar Power Transistor Device Data
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
TIP41 | NPN Silicon Epitaxial Power Transistor | Thinki Semiconductor |
TIP41 | NPN PLASTIC POWER TRANSISTORS | CDIL |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |