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부품번호 | TIP50 기능 |
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기능 | High Voltage NPN Silicon Power Transistors | ||
제조업체 | ON Semiconductor | ||
로고 | |||
전체 6 페이지수
TIP47G, TIP48G, TIP50G
High Voltage NPN Silicon
Power Transistors
This series is designed for line operated audio output amplifier,
SWITCHMODE power supply drivers and other switching
applications.
Features
• Popular TO−220 Plastic Package
• Complementary to the MJE5730 and MJE5731 Series
• These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Symbol TIP47 TIP48 TIP50 Unit
Collector − Emitter Voltage
VCEO 250 300 400 Vdc
Collector − Base Voltage
VCB 350 400 500 Vdc
Emitter − Base Voltage
VEB
5.0 Vdc
Collector Current − Continuous
IC
1.0 Adc
Collector Current − Peak
ICM
2.0 Adc
Base Current
IB 0.6 Adc
Total Power Dissipation
@ TC = 25_C
Derate above 25_C
PD
40 W
0.32 W/_C
Total Power Dissipation
PD
@ TC = 25_C
2.0 W
Derate above 25_C
0.016
W/_C
Unclamped Inducting Load
Energy (See Figure 8)
E
20 mJ
Operating and Storage
Junction Temperature Range
TJ, Tstg
−65 to +150
_C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Thermal Resistance,
Junction−to−Case
RqJC
Thermal Resistance,
Junction−to−Ambient
RqJA
Max
3.125
62.5
Unit
°C/W
°C/W
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1.0 AMPERE
POWER TRANSISTORS
NPN SILICON
250−300− 400 VOLTS
40 WATTS
COLLECTOR
2,4
1
BASE
3
EMITTER
MARKING
DIAGRAM
4
12 3
TIPxx
xx
A
Y
WW
G
TO−220AB
CASE 221A
STYLE 1
TIPxxG
AYWW
= Device Code
= 47, 48, or 50
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2014
October, 2014 − Rev. 11
1
Publication Order Number:
TIP47/D
TIP47G, TIP48G, TIP50G
5.0
TC ≤ 25°C
2.0
1.0
1.0 ms
0.5
dc
0.2
SECONDARY BREAKDOWN LIMITED
0.1 THERMALLY LIMITED @ 25°C
BONDING WIRE LIMITED
0.05
0.02
CURVES APPLY
BELOW RATED VCEO
TIP47
TIP48
TIP50
100 ms
500 ms
5.0 10
20
50 100 200
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5. Active Region Safe Operating Area
500
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 150_C. TJ(pk) may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
5.0
2.0
1.0
0.5
0.2
0.1
0.05
0.02
ts
TJ = 25°C
VCC = 200 V
IC/IB = 5.0
tf
0.05 0.1
0.2
0.5
IC, COLLECTOR CURRENT (AMPS)
Figure 6. Turn−Off Time
1.0
2.0
+ 4.5
+ 3.5
+ 2.5
+ 1.5
+ 0.5
0
- 0.5
- 1.5
- 2.5
0.02
*APPLIES FOR IC/IB ≤ hFE/5
qVC FOR VCE(sat)
+ 25°C to + 150°C
- 55°C to + 25°C
+ 25°C to + 150°C
qVB FOR VBE
- 55°C to + 25°C
0.05 0.1 0.2
0.5 1.0
IC, COLLECTOR CURRENT (AMPS)
2.0
Figure 7. Temperature Coefficients
VCE MONITOR
INPUT
MJE171
50
RBB1 =
150 W
50
VBB1 = 10 V
RBB2 =
100 W
VBB2 =
0
TUT 100 mH
VCC = 20 V
IC MONITOR
RS =
0.1 W
Note A: Input pulse width is increased until ICM = 0.63 A.
INPUT
VOLTAGE
0V
- 5 V
0.63 A
COLLECTOR
CURRENT
0V
VCER
COLLECTOR
VOLTAGE
10 V
VCE(sat)
Figure 8. Inductive Load Switching
tw ≈ 3 ms
(SEE NOTE A)
100 ms
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부품번호 | 상세설명 및 기능 | 제조사 |
TIP50 | Power Transistors | RECTRON |
TIP50 | NPN Silicon Transistor | Fairchild Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |