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TIPL765A 데이터시트 PDF




Power Innovations Limited에서 제조한 전자 부품 TIPL765A은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

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TIPL765A 데이터시트, 핀배열, 회로
Copyright © 1997, Power Innovations Limited, UK
TIPL765, TIPL765A
NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997
q Rugged Triple-Diffused Planar Construction
q 10 A Continuous Collector Current
q Operating Characteristics Fully Guaranteed
at 100°C
q 1000 Volt Blocking Capability
q 125 W at 25°C Case Temperature
B
C
E
SOT-93 PACKAGE
(TOP VIEW)
1
2
3
Pin 2 is in electrical contact with the mounting base.
MDTRAA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
Collector-base voltage (IE = 0)
RATING
Collector-emitter voltage (VBE = 0)
Collector-emitter voltage (IB = 0)
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous device dissipation at (or below) 25°C case temperature
Operating junction temperature range
Storage temperature range
NOTE 1: This value applies for tp 10 ms, duty cycle 2%.
TIPL765
TIPL765A
TIPL765
TIPL765A
TIPL765
TIPL765A
SYMBOL
VCBO
VCES
VCEO
VEBO
IC
ICM
Ptot
Tj
Tstg
VALUE
850
1000
850
1000
400
450
10
10
15
125
-65 to +150
-65 to +150
UNIT
V
V
V
V
A
A
W
°C
°C
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1




TIPL765A pdf, 반도체, 판매, 대치품
TIPL765, TIPL765A
NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
100
VCE = 5 V
TCP765AE
TC = 125°C
TC = 25°C
TC = -65°C
10
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
TCP765AF
5·0
IC = 1 A
IC = 2 A
IC = 5 A
4·0 IC = 10 A
TC = 25°C
3·0
2·0
1·0
1·0 0
0·1
1·0
10 0·01 0·1
1·0
IC - Collector Current - A
IB - Base Current - A
Figure 3.
Figure 4.
10
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
TCP765AJ
5·0
IC = 1 A
IC = 2 A
IC = 5 A
4·0 IC = 10 A
TC = 100°C
3·0
BASE-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
TCP765AG
1·6
1·4
1·2
2·0
1·0
0
0·01
0·1 1·0
IB - Base Current - A
Figure 5.
1·0
0·8
IC = 10 A
IC = 5 A
IC = 2 A
IC = 1 A
0·6
10 0 0·5 1·0 1·5 2·0
IB - Base Current - A
Figure 6.
PRODUCT INFORMATION
4

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TIPL765A 전자부품, 판매, 대치품
TIPL765, TIPL765A
NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997
IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any
semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the
information being relied on is current.
PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI
deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except as mandated by government requirements.
PI accepts no liability for applications assistance, customer product design, software performance, or infringement
of patents or services described herein. Nor is any license, either express or implied, granted under any patent
right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,
machine, or process in which such semiconductor products or services might be or are used.
PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE
SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.
Copyright © 1997, Power Innovations Limited
PRODUCT INFORMATION
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