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TISP4400H3BJ 데이터시트 PDF




Power Innovations Limited에서 제조한 전자 부품 TISP4400H3BJ은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

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부품번호 TISP4400H3BJ 기능
기능 BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
제조업체 Power Innovations Limited
로고 Power Innovations Limited 로고


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TISP4400H3BJ 데이터시트, 핀배열, 회로
TISP4070H3BJ THRU TISP4095H3BJ, TISP4125H3BJ THRU TISP4200H3BJ,
TISP4240H3BJ THRU TISP4400H3BJ
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
Copyright © 1999, Power Innovations Limited, UK
NOVEMBER 1997 - REVISED MARCH 1999
TELECOMMUNICATION SYSTEM 100 A 10/1000 OVERVOLTAGE PROTECTORS
q 8 kV 10/700, 200 A 5/310 ITU-T K20/21 rating
q Ion-Implanted Breakdown Region
Precise and Stable Voltage
Low Voltage Overshoot under Surge
SMBJ PACKAGE
(TOP VIEW)
R(B) 1
2 T(A)
DEVICE
‘4070
‘4080
‘4095
‘4125
‘4145
‘4165
‘4180
‘4200
‘4240
‘4265
‘4300
‘4350
‘4400
VDRM
V
58
65
75
100
120
135
145
155
180
200
230
275
300
V(BO)
V
70
80
95
125
145
165
180
200
240
265
300
350
400
MDXXBG
device symbol
T
SD4XAA
R
Terminals T and R correspond to the
alternative line designators of A and B
q Rated for International Surge Wave Shapes
WAVE SHAPE
2/10 µs
8/20 µs
10/160 µs
10/700 µs
10/560 µs
10/1000 µs
STANDARD
GR-1089-CORE
IEC 61000-4-5
FCC Part 68
ITU-T K20/21
FCC Part 68
GR-1089-CORE
ITSP
A
500
300
250
200
160
100
q Low Differential Capacitance . . . 67 pF max.
q UL Recognized, E132482
description
These devices are designed to limit overvoltages on the telephone line. Overvoltages are normally caused by
a.c. power system or lightning flash disturbances which are induced or conducted on to the telephone line. A
single device provides 2-point protection and is typically used for the protection of 2-wire telecommunication
equipment (e.g. between the Ring and Tip wires for telephones and modems). Combinations of devices can
be used for multi-point protection (e.g. 3-point protection between Ring, Tip and Ground).
The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially
clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to
crowbar into a low-voltage on state. This low-voltage on state causes the current resulting from the
overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup
as the diverted current subsides.
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1




TISP4400H3BJ pdf, 반도체, 판매, 대치품
TISP4070H3BJ THRU TISP4095H3BJ, TISP4125H3BJ THRU TISP4200H3BJ,
TISP4240H3BJ THRU TISP4400H3BJ
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
NOVEMBER 1997 - REVISED MARCH 1999
thermal characteristics
PARAMETER
RθJA Junction to free air thermal resistance
TEST CONDITIONS
EIA/JESD51-3 PCB, IT = ITSM(1000),
TA = 25 °C, (see Note 7)
265 mm x 210 mm populated line card,
4-layer PCB, IT = ITSM(1000), TA = 25 °C
MIN TYP MAX UNIT
113
°C/W
50
NOTE 7: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
PARAMETER MEASUREMENT INFORMATION
+i
ITSP
ITSM
IT
IH
VT
Quadrant I
Switching
Characteristic
V(BO)
I(BO)
VDRM
-v
IDRM
VD ID
ID VD
VDRM
IDRM
+v
I(BO)
V(BO)
IH
VT
IT
ITSM
Quadrant III
Switching
Characteristic
ITSP
-i
PMXXAAB
Figure 1. VOLTAGE-CURRENT CHARACTERISTIC FOR T AND R TERMINALS
ALL MEASUREMENTS ARE REFERENCED TO THE R TERMINAL
PRODUCT INFORMATION
4

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TISP4400H3BJ 전자부품, 판매, 대치품
TISP4070H3BJ THRU TISP4095H3BJ, TISP4125H3BJ THRU TISP4200H3BJ,
TISP4240H3BJ THRU TISP4400H3BJ
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
NOVEMBER 1997 - REVISED MARCH 1999
RATING AND THERMAL INFORMATION
NON-REPETITIVE PEAK ON-STATE CURRENT
vs
CURRENT DURATION
TI4HAC
30
VGEN = 600 Vrms, 50/60 Hz
20 RGEN = 1.4*VGEN/ITSM(t)
EIA/JESD51-2 ENVIRONMENT
15 EIA/JESD51-3 PCB
TA = 25 °C
10
9
8
7
6
5
4
3
2
1.5
0·1
1 10 100
t - Current Duration - s
Figure 8.
1000
VDRM DERATING FACTOR
vs
MINIMUM AMBIENT TEMPERATURE
1.00
TI4HAD
0.99
0.98
0.97
'4070 THRU '4095
0.96
0.95
0.94
'4125 THRU '4200
'4240 THRU '4440
0.93
-40 -35 -30 -25 -20 -15 -10 -5 0 5 10 15 20 25
TAMIN - Minimum Ambient Temperature - °C
Figure 10.
150
100
70
50
40
30
20
15
10
7
5
4
3
2
1.5
1
0·1
THERMAL IMPEDANCE
vs
POWER DURATION
TI4HAE
ITSM(t) APPLIED FOR TIME t
EIA/JESD51-2 ENVIRONMENT
EIA/JESD51-3 PCB
TA = 25 °C
1 10 100
t - Power Duration - s
1000
Figure 9.
IMPULSE RATING
vs
AMBIENT TEMPERATURE
TC4HAA
700
600 BELLCORE 2/10
500
400 IEC 1.2/50, 8/20
300
FCC 10/160
250
ITU-T 10/700
200
FCC 10/560
150
120
BELLCORE 10/1000
100
90
-40 -30 -20 -10 0 10 20 30 40 50 60 70 80
TA - Ambient Temperature - °C
Figure 11.
PRODUCT INFORMATION
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부품번호상세설명 및 기능제조사
TISP4400H3BJ

BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

Power Innovations Limited
Power Innovations Limited

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