Datasheet.kr   

TISP5110H3BJ 데이터시트 PDF




Power Innovations Limited에서 제조한 전자 부품 TISP5110H3BJ은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

PDF 형식의 TISP5110H3BJ 자료 제공

부품번호 TISP5110H3BJ 기능
기능 FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
제조업체 Power Innovations Limited
로고 Power Innovations Limited 로고


TISP5110H3BJ 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




전체 15 페이지수

미리보기를 사용할 수 없습니다

TISP5110H3BJ 데이터시트, 핀배열, 회로
TISP5070H3BJ, TISP5080H3BJ, TISP5110H3BJ, TISP5150H3BJ
FORWARD-CONDUCTING
UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
Copyright © 1999, Power Innovations Limited, UK
JANUARY 1998 - REVISED MARCH 1999
TELECOMMUNICATION SYSTEM HIGH CURRENT OVERVOLTAGE PROTECTORS
q Analogue Line Card and ISDN Protection
- Analogue SLIC
- ISDN U Interface
- ISDN Power Supply
q 8 kV 10/700, 200 A 5/310 ITU-T K20/21 rating
SMBJ PACKAGE
(TOP VIEW)
12
q Ion-Implanted Breakdown Region
Precise and Stable Voltage
Low Voltage Overshoot under Surge
DEVICE
‘5070
‘5080
‘5110
‘5150
VDRM
V(BO)
MINIMUM
V
-58
-65
-80
-120
MAXIMUM
V
-70
-80
-110
-150
q Rated for International Surge Wave Shapes
device symbol
MDXXBGB
2
SD5XAB
1
WAVE SHAPE
STANDARD
2/10 µs
8/20 µs
10/160 µs
10/700 µs
10/560 µs
10/1000 µs
GR-1089-CORE
ANSI C62.41
FCC Part 68
ITU-T K20/21
FCC Part 68
GR-1089-CORE
ITSP
A
500
300
250
200
160
100
description
These devices are designed to limit overvoltages on the telephone and data lines. Overvoltages are normally
caused by a.c. power system or lightning flash disturbances which are induced or conducted on to the
telephone line. A single device provides 2-point protection and is typically used for the protection of ISDN
power supply feeds. Two devices, one for the Ring output and the other for the Tip output, will provide
protection for single supply analogue SLICs. A combination of three devices will give a low capacitance
protector network for the 3-point protection of ISDN lines.
The protector consists of a voltage-triggered unidirectional thyristor with an anti-parallel diode. Negative
overvoltages are initially clipped by breakdown clamping until the voltage rises to the breakover level, which
causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the current
resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current
prevents d.c. latchup as the diverted current subsides. Positive overvoltages are limited by the conduction of
the anti-parallel diode.
This TISP5xxxH3BJ range consists of four voltage variants to meet various maximum system voltage levels
(58 V to 120 V). They are guaranteed to voltage limit and withstand the listed international lightning surges in
both polarities. These high (H) current protection devices are in a plastic package SMBJ (JEDEC DO-214AA
with J-bend leads) and supplied in embossed carrier reel pack.
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1




TISP5110H3BJ pdf, 반도체, 판매, 대치품
TISP5070H3BJ, TISP5080H3BJ, TISP5110H3BJ, TISP5150H3BJ
FORWARD-CONDUCTING
UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
JANUARY 1998 - REVISED MARCH 1999
PARAMETER MEASUREMENT INFORMATION
+i
ITSP
ITSM
IF
VF
Quadrant I
Forward
Conduction
Characteristic
VDRM
-v
IDRM
VD
ID
+v
I(BO)
V(BO)
Quadrant III
Switching
Characteristic
IH
VT
IT
ITSM
ITSP
-i
PMXXACA
Figure 1. VOLTAGE-CURRENT CHARACTERISTIC FOR TERMINAL PAIR
ALL MEASUREMENTS ARE REFERENCED TO TERMINAL 1
PRODUCT INFORMATION
4

4페이지










TISP5110H3BJ 전자부품, 판매, 대치품
TISP5070H3BJ, TISP5080H3BJ, TISP5110H3BJ, TISP5150H3BJ
FORWARD-CONDUCTING
UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
JANUARY 1998 - REVISED MARCH 1999
RATING AND THERMAL INFORMATION
NON-REPETITIVE PEAK ON-STATE CURRENT
vs
CURRENT DURATION
TI5HAC
30
VGEN = 600 Vrms, 50/60 Hz
20 RGEN = 1.4*VGEN/ITSM(t)
EIA/JESD51-2 ENVIRONMENT
15
EIA/JESD51-3 PCB
TA = 25 °C
10
9
8
7
6
5
4
3
2
1.5
0·1
1 10 100
t - Current Duration - s
Figure 8.
1000
VDRM DERATING FACTOR
vs
MINIMUM AMBIENT TEMPERATURE
TI5XAD
1.00
0.99
0.98
0.97
0.96
0.95
0.94
0.93
-40 -35 -30 -25 -20 -15 -10 -5 0 5 10 15 20 25
TAMIN - Minimum Ambient Temperature - °C
Figure 9.
IMPULSE RATING
vs
AMBIENT TEMPERATURE TC5XAA
700
600 BELLCORE 2/10
500
400 IEC 1.2/50, 8/20
300 FCC 10/160
250
ITU-T 10/700
200
FCC 10/560
150
120 BELLCORE 10/1000
100
90
80
-40 -30 -20 -10 0 10 20 30 40 50 60 70 80
TA - Ambient Temperature - °C
Figure 10.
PRODUCT INFORMATION
7

7페이지


구       성 총 15 페이지수
다운로드[ TISP5110H3BJ.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
TISP5110H3BJ

FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

Power Innovations Limited
Power Innovations Limited
TISP5110H3BJ

FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR

Bourns
Bourns

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵