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부품번호 TISP61060DR 기능
기능 DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS
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TISP61060DR 데이터시트, 핀배열, 회로
Copyright © 1997, Power Innovations Limited, UK
TISP61060D, TISP61060P
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS
PROGRAMMABLE OVERVOLTAGE PROTECTORS
SEPTEMBER 1995 - REVISED SEPTEMBER 1997
PROGRAMMABLE SLIC OVERVOLTAGE PROTECTION
q Dual Voltage-Programmable Protectors
- Third Generation Design using Vertical
Power Technology
- Wide -5 V to -85 V Programming Range
- High 150 mA min. Holding Current
q Reduced VBAT Supply Current
- Triggering Current is Typically 50x Lower
- Negative Value Power Induction Current
Removes Need for Extra Protection Diode
q Rated for LSSGR & FCC Surges
STANDARD
LSSGR
FCC Part 68
LSSGR
WAVE SHAPE
10/1000 µs
10/160 µs
2/10 µs
ITSP
A
30
45
50
'61060D PACKAGE
(TOP VIEW)
(Tip)
(VS)
K1
G
NC
1
2
3
8 K1 (Tip)
7 A (Ground)
6 A (Ground)
(Ring) K2 4
5 K2 (Ring)
MD6XAO
NC - No internal connection
Terminal typical application names shown in
parenthesis
'61060P PACKAGE
(TOP VIEW)
(Tip) K1 1
(VS) G 2
NC 3
8 K1 (Tip)
7 A (Ground)
6 A (Ground)
q Surface Mount and Through-Hole Options
- TISP61060P for Plastic DIP
- TISP61060D for Small-Outline
- TISP61060DR for Taped and Reeled
Small-Outline
q Functional Replacements for
(Ring) K2 4
5 K2 (Ring)
MD6XAP
NC - No internal connection
Terminal typical application names shown in
parenthesis
device symbol
PART NUMBERS
TCM1030P, TCM1060P, LB1201AB
TCM1030D, TCM1060D, LB1201AS
TCM1030DR, TCM1060DR
FUNCTIONAL
REPLACEMENT
TISP61060P
TISP61060D
TISP61060DR
K1 G K2
description
The TISP61060 is a dual forward-conducting
buffered p-gate overvoltage protector. It is
designed to protect monolithic SLICs (Subscriber
Line Interface Circuits), against overvoltages on
the telephone line caused by lightning, a.c.
power contact and induction. The TISP61060
limits voltages that exceed the SLIC supply rail
voltage.
A SD6XAE
Terminals K1, K2 and A correspond to the alternative
line designators of T, R and G or A, B and C. The
negative protection voltage is controlled by the voltage,
VGG, applied to the G terminal.
The SLIC line driver section is typically powered from 0 V (ground) and a negative voltage in the region of
-10 V to -70 V. The protector gate is connected to this negative supply. This references the protection
(clipping) voltage to the negative supply voltage. As the protection voltage will track the negative supply
voltage, the overvoltage stress on the SLIC is minimised. (see Applications Information).
Positive overvoltages are clipped to ground by diode forward conduction. Negative overvoltages are initially
clipped close to the SLIC negative supply rail value. If sufficient current is available from the overvoltage, then
the protector will crowbar into a low voltage on-state condition. As the current subsides the high holding
current of the crowbar prevents d.c. latchup.
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1




TISP61060DR pdf, 반도체, 판매, 대치품
TISP61060D, TISP61060P
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS
PROGRAMMABLE OVERVOLTAGE PROTECTORS
SEPTEMBER 1995 - REVISED SEPTEMBER 1997
general
DEVICE PARAMETERS
Thyristor based overvoltage protectors, for telecommunications equipment, became popular in the late
1970s. These were fixed voltage breakover triggered devices, likened to solid state gas discharge tubes. As
these were new forms of thyristor, the existing thyristor terminology did not cover their special characteristics.
This resulted in the invention of new terms based on the application usage and device characteristic. Initially,
there was a wide diversity of terms to describe the same thing, but today the number of terms have reduced
and stabilised.
Programmable, (gated), overvoltage protectors are relatively new and require additional parameters to
specify their operation. Similarly to the fixed voltage protectors, the introduction of these devices has resulted
in a wide diversity of terms to describe the same thing. To help promote an understanding of the terms and
their alternatives, this section has a list of alternative terms and the parameter definitions used for this data
sheet. In general, the Texas Instruments approach is to use terms related to the device internal structure,
rather than its application usage as a single device may have many applications each using a different
terminology for circuit connection.
alternative symbol cross-reference guide
This guide is intended to help the translation of alternative symbols to those used in this data sheet. As in
some cases the alternative symbols have no substance in international standards and are not fully defined by
the originators, users must confirm symbol equivalence. No liability will be assumed from the use of this
guide.
CROSS-REFERENCE FOR TISP61060 AND TCM1030/60
TISP61060 PARAMETER
DATA SHEET ALTERNATIVE
ALTERNATIVE PARAMETER
SYMBOL
SYMBOL
RATINGS & CHARACTERISTICS
TCM1060, TCM1030
Non-repetitive peak on-state pulse current
Non-repetitive peak on-state current
Non-repetitive peak on-state current
Forward voltage
Forward current
On-state voltage
On-state current
Switching current
Breakover voltage
Gate reverse current (with A and K terminals connected)
Off-state current
Off-state voltage
Gate-cathode breakover voltage
Gate voltage, (VGG is gate supply voltage referenced
to the A terminal)
ITSP
ITSM
ITSM
VF
IF
VT
IT
IS
V(BO)
IGAS
ID
VD
VGK(BO)
VG
-
-
-
VCF
IFM
VC
ITM
Itrip
Vtrip
ID
ID
VS
VOS
VS
Non-repetitive peak surge current
Non-repetitive peak surge current,10 ms
Continuous 60-Hz sinewave, 2 s
Forward clamping voltage
Peak forward current
Reverse clamping voltage
Peak reverse current
Trip current
Trip voltage
Stand-by current, TIP & RING at GND
Stand-by current, TIP & RING at VS
Supply voltage
Transient overshoot voltage
Supply voltage
Off-state capacitance
TERMINALS
CO Coff
Off-state capacitance
TCM1060, TCM1030
Cathode 1
K1 Tip
Tip
Cathode 2
K2 Ring Ring
Anode
A
GND
Ground
Gate
G VS Supply voltage
PRODUCT INFORMATION
4

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TISP61060DR 전자부품, 판매, 대치품
TISP61060D, TISP61060P
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS
PROGRAMMABLE OVERVOLTAGE PROTECTORS
SEPTEMBER 1995 - REVISED SEPTEMBER 1997
10
0
-10
-20
-30
-40
-50
-60
0
750
500
250
0
-250
-500
-750
0
VG
5
VK
10
Time - ms
15
IG
IK
5 10 15
Time - ms
Figure 3. IC PROTECTOR POWER CROSS WAVE FORMS
20
100
75
50
25
0
-25
-50
-75
-100
20
AI6XAG
thyristor to switch into the low-voltage on-state condition. At the end of the negative half cycle, the thyristor
switches off when the current falls below the holding current value (300 mA). Switch-off and re-clipping at
-52 V causes a second pulse of gate current. The wire current drawn by the protector is quasi-sinusoidal
During the positive a.c. voltage period (diode clipping) there is no gate current. During the negative a.c.
voltage period there are two triangular pulses of gate current, which peak at about 80 mA. This is current
which flows into the gate terminal as indicated by the IG current arrow in Figure 2. This direction of current
charges the VBAT supply. This would not be a problem if the VBAT supply was a rechargeable battery.
However, often the supply is generated from a switching mode power supply or the SLIC supply feed has a
series diode which blocks reverse (charging) current flow to the battery. In these cases the supply can only
sink current in the direction shown by the IBAT arrow in Figure 2. Unless the SLIC current, ISLIC, is equal or
greater than IG the value of VBAT will increase, possibly to a level which causes destruction of the SLIC.
The maximum average value of IG occurs when the thyristor only clips the voltage and the peak cathode
current is just beginning to approach the switching (IS) value, see Figure 4. The average current is maximised
under high source impedance conditions (e.g. 600 ). In the case of the LB1201AB, it is recommended that
the supply should be able to absorb 700 mA of “wrong way” current. If the supply cannot absorb the current
then a shunt breakdown diode is recommended to provided a path for the gate current to ground (D2 in
Figure 2). High power diodes are expensive, so diode D2 is usually low power, purposely selected to fail
under this a.c. condition and protect the SLIC.
PRODUCT INFORMATION
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TISP61060D

DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS

Power Innovations Limited
Power Innovations Limited
TISP61060DR

DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS

Power Innovations Limited
Power Innovations Limited

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