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TDE1890D 데이터시트 PDF




ST Microelectronics에서 제조한 전자 부품 TDE1890D은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


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부품번호 TDE1890D 기능
기능 2A HIGH-SIDE DRIVER INDUSTRIAL INTELLIGENT POWER SWITCH
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TDE1890D 데이터시트, 핀배열, 회로
TDE1890
® TDE1891
2A HIGH-SIDE DRIVER
INDUSTRIAL INTELLIGENT POWER SWITCH
2A OUTPUT CURRENT
18V TO 35V SUPPLY VOLTAGE RANGE
INTERNAL CURRENT LIMITING
THERMAL SHUTDOWN
OPEN GROUND PROTECTION
INTERNAL NEGATIVE VOLTAGE CLAMPING
TO VS - 50V FOR FAST DEMAGNETIZATION
DIFFERENTIAL INPUTS WITH LARGE COM-
MON MODE RANGE AND THRESHOLD
HYSTERESIS
UNDERVOLTAGELOCKOUT WITH HYSTERESIS
OPEN LOAD DETECTION
TWO DIAGNOSTIC OUTPUTS
OUTPUT STATUS LED DRIVER
DESCRIPTION
The TDE1890/1891 is a monolithic Intelligent
Power Switch in Multipower BCD Technology, for
BLOCK DIAGRAM
MULTIPOWER BCD TECHNOLOGY
MULTIWATT11 MULTIWATT11V PowerSO20
(In line)
ORDERING NUMBERS:
TDE1891L
TDE1890V
TDE1890D
TDE1891V
driving inductive or resistive loads. An internal
Clamping Diode enables the fast demagnetization
of inductive loads.
Diagnostic for CPU feedback and extensive use
of electrical protections make this device ex-
tremely rugged and specially suitable for indus-
trial automation applications.
July 1998
1/12




TDE1890D pdf, 반도체, 판매, 대치품
TDE1890 - TDE1891
SOURCE DRAIN NDMOS DIODE
Symbol
Parameter
Vfsd Forward On Voltage
Ifp Forward Peak Current
trr Reverse Recovery Time
tfr Forward Recovery Time
THERMAL CHARACTERISTICS
Test Condition
@ Ifsd = 2.5A
t = 10ms; d = 20%
If = 2.5A di/dt = 25A/µs
Ø Lim Junction Temp. Protect.
TH Thermal Hysteresis
SWITCHING CHARACTERISTICS (VS = 24V; RL = 12)
ton Turn on Delay Time
toff Turn off Delay Time
td Input Switching to Diagnostic
Valid
Note Vil < 0.8V, Vih > 2V @ (V+In > V–In)
Figure 1
Min.
Typ.
1
200
100
Max.
1.5
6
Unit
V
A
ns
ns
135 150
30
°C
°C
200 µs
40 µs
200 µs
TRUE
FALSE
HIGH
LOW
DIAGNOSTIC TRUTH TABLE
Diagnostic Conditions
Normal Operation
Open Load Condition (Io < Iold)
Short to VS
Short Circuit to Ground (IO = ISC) (**)
Output DMOS Open
Overtemperature
Supply Undervoltage (VS < Vsth2)
TDE1891
TDE1890
Input
L
H
L
H
L
H
H
H
L
H
L
H
L
H
Output
L
H
L
H
H
H
<H (*)
H
L
L
L
L
L
L
L
Diag1
H
H
H
L
L
L
H
H
H
H
L
H
H
L
L
Diag2
H
H
H
H
H
H
L
H
H
H
H
L
L
L
L
(*) According to the intervention of the current limiting block.
(**) A cold lamp filament, or a capacitive load may activate the current limiting circuit of the I PS, when the IPS is initially turned on. TDE1891
uses Diag2 to signal such condition, TDE1890 does not.
4/12

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TDE1890D 전자부품, 판매, 대치품
WORST CONDITION POWER DISSIPATION IN
THE ON-STATE
In IPS applications the maximum average power
dissipation occurs when the device stays for a
long time in the ON state. In such a situation the
internal temperature depends on delivered cur-
rent (and related power), thermal characteristics
of the package and ambient temperature.
At ambient temperature close to upper limit
(+85°C) and in the worst operating conditions, it is
possible that the chip temperature could increase
so much to make the thermal shutdown proce-
dure untimely intervene.
Our aim is to find the maximum current the IPS
can withstand in the ON state without thermal
shutdown intervention, related to ambient tem-
perature. To this end, we should consider the fol-
lowing points:
1) The ON resistance RDSON of the output
NDMOS (the real switch) of the device in-
creases with its temperature.
Experimental results show that silicon resistiv-
ity increases with temperature at a constant
rate, rising of 60% from 25°C to 125°C.
The relationship between RDSON and tem-
perature is therefore:
R DSON = R DSON0 ( 1 + k ) ( T j 25 )
where:
Tj is the silicon temperature in °C
RDSON0
k is the
is RDSON at Tj=25°C
constant rate (k = 4.711
10
3)
(see fig. 4).
2) In the ON state the power dissipated in the
device is due to three contributes:
a) power lost in the switch:
P out = I out 2 R DSON (Iout is the output cur-
rent);
b) power due to quiescent current in the ON
state Iq, sunk by the device in addition to
Iout: P q = I q V s (Vs is the supply voltage);
c) an external LED could be used to visualize
the switch state (OUTPUT STATUS pin).
Such a LED is driven by an internal current
source (delivering Ios) and therefore, if Vos is
the voltage drop across the LED, the dissi-
pated power is: P os = I os ( V s V os ).
Thus the total ON state power consumption is
given by:
P on = P out + P q + P os
(1)
In the right side of equation 1, the second and
TDE1890 - TDE1891
the third element are constant, while the first
one increases with temperature because
RDSON increases as well.
3) The chip temperature must not exceed ΘLim
in order do not lose the control of the device.
The heat dissipation path is represented by
the thermal resistance of the system device-
ambient (Rth). In steady state conditions, this
parameter relates the power dissipated Pon to
the silicon temperature Tj and the ambient
temperature Tamb:
T j T amb = P on R th
(2)
From this relationship, the maximum power
Pon which can be dissipated without exceed-
ing ΘLim at a given ambient temperature
Tamb is:
P
on
=
ΘLim T
R th
amb
Replacing the expression (1) in this equation
and solving for Iout, we can find the maximum
current versus ambient temperature relation-
ship:
I outx =
ΘLim T
R th
amb
P
q
P
os
R DSONx
where RDSONx is RDSON at Tj=ΘLim. Of
course, Ioutx values are top limited by the
maximum operative current Ioutx (2A nominal).
From the expression (2) we can also find the
maximum ambient temperature Tamb at which
a given power Pon can be dissipated:
T amb = ΘLim P on R th =
= ΘLim ( I out 2 R DSONx + P q + P os ) R th
In particular, this relation is useful to find the
maximum ambient temperature Tambx at
which Ioutx can be delivered:
T ambx = ΘLim − ( I outx 2 R DSONx +
+ P q + P os ) R th
(4)
Referring to application circuit in fig. 6, let us con-
sider the worst case:
- The supply voltage is at maximum value of in-
dustrial bus (30V instead of the 24V nominal
value). This means also that Ioutx rises of 25%
(2.5A instead of 2A).
7/12

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2A HIGH-SIDE DRIVER INDUSTRIAL INTELLIGENT POWER SWITCH

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2A HIGH-SIDE DRIVER INDUSTRIAL INTELLIGENT POWER SWITCH

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