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TE28F008B3T150 데이터시트 PDF




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부품번호 TE28F008B3T150 기능
기능 SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE
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TE28F008B3T150 데이터시트, 핀배열, 회로
E
PRELIMINARY
SMART 3 ADVANCED BOOT BLOCK
BYTE-WIDE
8-MBIT (1024K x 8), 16-MBIT (2056K x 8)
FLASH MEMORY FAMILY
28F008B3, 28F016B3
n Flexible SmartVoltage Technology
2.7V–3.6V Program/Erase
2.7V–3.6V Read Operation
12V VPP Fast Production
Programming
n 2.7V or 1.8V I/O Option
Reduces Overall System Power
n Optimized Block Sizes
Eight 8-Kbyte Blocks for Data,
Top or Bottom Locations
Up to Thirty-One 64-Kbyte Blocks
for Code
n High Performance
2.7V–3.6V: 120 ns Max Access Time
n Block Locking
VCC-Level Control through WP#
n Low Power Consumption
20 mA Maximum Read Current
n Absolute Hardware-Protection
VPP = GND Option
VCC Lockout Voltage
n Extended Temperature Operation
–40°C to +85°C
n Supports Code plus Data Storage
Optimized for FDI, Flash Data
Integrator Software
Fast Program Suspend Capability
Fast Erase Suspend Capability
n Extended Cycling Capability
10,000 Block Erase Cycles
n Automated Byte Program and Block
Erase
Command User Interface
Status Registers
n SRAM-Compatible Write Interface
n Automatic Power Savings Feature
n Reset/Deep Power-Down
1 µA ICCTypical
Spurious Write Lockout
n Standard Surface Mount Packaging
48-Ball µBGA* Package
40-Lead TSOP Package
n Footprint Upgradeable
Upgradeable from 2-, 4- and 8-Mbit
Boot Block
n ETOX™ V (0.4 µ) Flash Technology
n x8-Only Input/Output Architecture
For Space-Constrained 8-bit
Applications
The new Smart 3 Advanced Boot Block, manufactured on Intel’s latest 0.4µ technology, represents a feature-
rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability
(2.7V read, program and erase) with high-speed, low-power operation. Several new features have been
added, including the ability to drive the I/O at 1.8V, which significantly reduces system active power and
interfaces to 1.8V controllers. A new blocking scheme enables code and data storage within a single device.
Add to this the Intel-developed Flash Data Integrator (FDI) software and you have the most cost-effective,
monolithic code plus data storage solution on the market today. Smart 3 Advanced Boot Block Byte-Wide
products will be available in 40-lead TSOP and 48-ball µBGA* packages. Additional information on this
product family can be obtained by accessing Intel’s WWW page: http://www.intel.com/design/flcomp
May 1997
Order Number: 290605-001




TE28F008B3T150 pdf, 반도체, 판매, 대치품
SMART 3 ADVANCED BOOT BLOCK–BYTE-WIDE
Number
-001
Original version
REVISION HISTORY
Description
E
4 PRELIMINARY

4페이지










TE28F008B3T150 전자부품, 판매, 대치품
E
SMART 3 ADVANCED BOOT BLOCK–BYTE-WIDE
2.1 Package Pinouts
The Smart 3 Advanced Boot Block flash memory is
available in 40-lead TSOP (see Figure 1) and 48-
ball µBGA packages (see Figures 2 and 3). In
Figure 1, pin changes from one density to the next
are circled. Both packages, 40-lead TSOP and 48-
ball µBGA package, are 8-bits wide and fully
upgradeable across product densities (from 8 Mb to
16 Mb).
28F016 28F008
A16
A15
A14
A13
A12
A11
A9
A8
WE#
RP#
VPP
WP#
A18
A7
A6
A5
A4
A3
A2
A1
A16
A15
A14
A13
A12
A11
A9
A8
WE#
RP#
VPP
WP#
A18
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
Advanced Boot Block
40-Lead TSOP
10 mm x 20 mm
TOP VIEW
Figure 1. 40-Lead TSOP Package
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
28F008 28F016
A17
GND
NC
A19
A10
DQ7
DQ6
DQ5
DQ4
VCCQ
VCC
NC
DQ3
DQ2
DQ1
DQ0
OE#
GND
CE#
A0
A17
GND
A20
A19
A10
DQ7
DQ6
DQ5
DQ4
VCCQ
VCC
NC
DQ3
DQ2
DQ1
DQ0
OE#
GND
CE#
A0
0605-01
PRELIMINARY
7

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TE28F008B3T150

SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE

Intel Corporation
Intel Corporation

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