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TE28F020-150 데이터시트 PDF




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부품번호 TE28F020-150 기능
기능 28F020 2048K (256K X 8) CMOS FLASH MEMORY
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TE28F020-150 데이터시트, 핀배열, 회로
E
28F020 2048K (256K X 8) CMOS
FLASH MEMORY
n Flash Electrical Chip-Erase
2 Second Typical Chip-Erase
n Quick-Pulse Programming Algorithm
10 µS Typical Byte-Program
4 second Chip-Program
n 100,000 Erase/Program Cycles
n 12.0 V ±5% VPP
n High-Performance Read
90 ns Maximum Access Time
n CMOS Low Power Consumption
10 mA Typical Active Current
50 µA Typical Standby Current
0 Watts Data Retention Power
n Integrated Program/Erase Stop Timer
n Command Register Architecture for
Microprocessor/Microcontroller
Compatible Write Interface
n Noise Immunity Features
±10% VCC Tolerance
Maximum Latch-Up Immunity
through EPI Processing
n ETOX™ Nonvolatile Flash Technology
EPROM-Compatible Process Base
High-Volume Manufacturing
Experience
n JEDEC-Standard Pinouts
32-Pin Plastic Dip
32-Lead PLCC
32-Lead TSOP
(See Packaging Spec., Order #231369)
n Extended Temperature Options
Intel’s 28F020 CMOS flash memory offers the most cost-effective and reliable alternative for read/write
random access nonvolatile memory. The 28F020 adds electrical chip-erasure and reprogramming to familiar
EPROM technology. Memory contents can be rewritten: in a test socket; in a PROM-programmer socket; on-
board during subassembly test; in-system during final test; and in-system after sale. The 28F020 increases
memory flexibility, while contributing to time and cost savings.
The 28F020 is a 2048-kilobit nonvolatile memory organized as 262,144 bytes of eight bits. Intel’s 28F020 is
offered in 32-pin plastic DIP, 32-lead PLCC, and 32-lead TSOP packages. Pin assignments conform to
JEDEC standards for byte-wide EPROMs.
Extended erase and program cycling capability is designed into Intel’s ETOX™ (EPROM Tunnel Oxide)
process technology. Advanced oxide processing, an optimized tunneling structure, and lower electric field
combine to extend reliable cycling beyond that of traditional EEPROMs. With the 12.0 V VPP supply, the
28F020 performs 100,000 erase and program cycles—well within the time limits of the quick-pulse
programming and quick-erase algorithms.
Intel’s 28F020 employs advanced CMOS circuitry for systems requiring high-performance access speeds,
low power consumption, and immunity to noise. Its 90 ns access time provides zero wait-state performance
for a wide range of microprocessors and microcontrollers. Maximum standby current of 100 µA translates
into power savings when the device is deselected. Finally, the highest degree of latch-up protection is
achieved through Intel’s unique EPI processing. Prevention of latch-up is provided for stresses up to 100 mA
on address and data pins, from –1 V to VCC + 1 V.
With Intel’s ETOX process technology base, the 28F020 builds on years of EPROM experience to yield the
highest levels of quality, reliability, and cost-effectiveness.
December 1997
Order Number: 290245-009




TE28F020-150 pdf, 반도체, 판매, 대치품
E28F020
Number
-004
-005
-006
-007
-008
-009
REVISION HISTORY
Description
Removed Preliminary Classification. Clarified AC and DC test conditions. Added “dimple”
to F TSOP package. Corrected serpentine layout.
Added –80V05, –90 ns speed grades. Added extended temperature devices. Corrected
AC Waveforms.
———— ————
Added –70 ns speed. Deleted –80 V05 speed. Revised symbols, i.e., CE, OE, etc. to CE#,
OE#, etc.
Updated Command Def. Table. Updated 28F020 Quick-Erase Algorithm. Updated AC
Characteristics. Removed serpentine layout diagram.
Minor changes throughout document.
Deleted –70 ns speed and F TSOP package. Added –120 ns speed and extended
temperature devices. Updated Ordering Information chart. Updated AC Characteristics.
Replaced references to –70 ns with –90 ns on first page. Removed F TSOP package pin
configuration diagram.
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TE28F020-150 전자부품, 판매, 대치품
E
28F020
Figure 2. 28F020 Pin Configurations
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TE28F020-150

28F020 2048K (256K X 8) CMOS FLASH MEMORY

Intel Corporation
Intel Corporation

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