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TEA1566S 데이터시트 PDF




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기능 GreenChip; SMPS module
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TEA1566S 데이터시트, 핀배열, 회로
INTEGRATED CIRCUITS
DATA SHEET
TEA1566
GreenChip; SMPS module
Preliminary specification
File under Integrated Circuits, IC11
1999 Apr 20




TEA1566S pdf, 반도체, 판매, 대치품
Philips Semiconductors
GreenChip; SMPS module
Preliminary specification
TEA1566
PINNING
SYMBOL PIN
DESCRIPTION
Isense
1 programmable current sense
resistor
Vaux
2 IC supply capacitor
Iref 3 reference resistor for setting
internal reference currents
Vctrl
4 feedback voltage for duty cycle
control
Gnd 5 ground
Dem
6 demagnetization input signal from
primary side auxiliary winding
OOB
7 on/off/burst mode input signal
NC 8 not connected
Vin 9 MOSFET drain connection
An efficient on-chip start-up circuit enables fast start-up
and dissipates negligible power after start up. On-chip
accurate oscillator generates a saw tooth waveform which
is used by the voltage mode feedback control circuitry to
generate a pulse width modulated signal for driving the
gate of the power MOSFET. A novel regulation scheme is
used to implement both primary and secondary side
regulation to minimize external component count.
Protection features like over voltage, over current, over
temperature, and demagnetization protection, give
comprehensive safety against system fault conditions.
The GreenChipoffers some advanced features that
greatly enhance the efficiency of the overall system.
Off-mode reduces the power consumption of the IC below
100 mW. Burst mode stand-by reduces the power
consumption of the system to below 2 W. Low power
operation mode reduces the operating frequency of the
system, when the system is working under low load
conditions, to reduce the switching losses.
handbook, halfpage
Isense 1
Vaux 2
Iref 3
Vctrl 4
Gnd 5 TEA1566
Dem 6
OOB 7
NC 8
Vin 9
MGR693
Fig.3 Pin configuration.
FUNCTIONAL DESCRIPTION
The GreenChipfamily of ICs are highly integrated, with
most common PWM functions like error amplifier,
oscillator, bias current generator, and band gap based
reference voltage circuits fully integrated in the ICs.
High level of integration leads to easy and cost effective
design of power supplies.The ICs have been fabricated in
a Philips proprietary high voltage BCDMOS process that
enables devices of up to 720 V to be fabricated on the
same chip with low voltage circuitry.
Start-up current source and Vaux management
A versatile on-chip start-up current source makes an
external, highly dissipating, trickle-charge circuit
unnecessary. See Fig.2 for the block diagram of the IC.
The start-up current source derives power from the mains
via pin Vin (drain). It supplies current (see symbols
‘Istart-low’ and ‘Istart-high’ of Chapter “Characteristics”) to
charge the Vaux (IC supply) capacitor and at the same
time provides current to the control circuitry of the IC. Once
the Vaux capacitor is charged to its start-up voltage level
(11 V), the on-chip oscillator starts oscillating and the IC
starts switching the power MOSFET. Power is then
supplied to the load capacitor via the secondary winding.
Figure 1 shows a typical flyback application diagram.
The Vaux capacitor is also supplied by an auxiliary
winding on the primary side. This winding is coupled to the
secondary side winding supplying the output capacitor.
As the output capacitor voltage increases and approaches
its nominal value, the re-supply of the Vaux capacitor is
done by the auxiliary winding. Figure 4 shows relevant
waveforms at start-up. For successful take over of supply
of Vaux capacitor by the auxiliary winding, it is important
that the re-supply of Vaux capacitor starts before its
voltage drops to its Under Voltage Lockout (UVLO) level of
8.05 V of the system and stops delivering power to the
output.
1999 Apr 20
4

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TEA1566S 전자부품, 판매, 대치품
Philips Semiconductors
GreenChip; SMPS module
Preliminary specification
TEA1566
Multi frequency control
The oscillator is also capable of working at a lower
frequency (see fosc-l in Chapter “Characteristics”). A ratio
of 1 : 2.5 is maintained between high and low frequency of
the oscillator. Low frequency operation is invoked if the
power supply is working at or below one ninth of its peak
power. By working at a lower frequency, the switching
losses in the power supply are reduced. A novel scheme
is used to ensure that the transfer of high to low frequency
and vice versa has no effect on the regulation of the output
voltage.
Gate driver
The gate driver has a totem-pole output stage that has
current sourcing capability of 120 mA and a current sink
capability of 550 mA. This is to enable fast turn on and turn
off of the power device for efficient operation.
A lower driver source current has been chosen in order to
limit the V/t at switch-on. This is advantageous for EMI
(ElectroMagnetic Interference) and reduces the current
spike across Rsense.
Demagnetization protection
This feature guarantees discontinuous conduction mode
operation for the power supply which simplifies the design
of feedback control and gives faster transient response.
Demagnetization protection is an additional protection
feature that protects against saturation of the
transformer/inductor. Demagnetization protection also
protects the power supply components against excessive
stresses at start-up, when all energy storage components
are completely discharged. The converter is cycle by cycle
protected during shorted output system fault condition due
to the demagnetization protection. The value of the
demagnetization resistor (Rdem) can be calculated with the
formula given in Section “Sample and hold”.
Negative clamp
The negative clamp circuit does not let the voltage on
pin Dem go below 0.4 V, when the auxiliary winding
voltage goes negative during the time that the power
device is turned on, to ensure correct operation of the IC.
Over voltage protection
An Over Voltage Protection (OVP) mode has been
implemented in the GreenChipseries. This circuit works
by sensing the Vaux voltage. If the output voltage exceeds
the preset voltage limit, the OVP circuit turns off the power
MOSFET. With no switching of the power device, the Vaux
capacitor is not re-supplied and discharges to UVLO level
and the system goes into the low dissipation safe-restart
mode described earlier. The system recovers from the
safe-restart mode only if the OVP condition is removed.
Over current protection
Cycle by cycle Over Current Protection (OCP) is provided
by sensing the voltage on an external resistor which is
connected to the source of the power MOSFET.
The voltage on the current sense resistor, which reflects
the amplitude of the primary current, is compared
internally with a reference voltage using a high speed
comparator. This threshold voltage is specified as Vth(Imax)
in the chapter “Characteristics”. The maximum primary
(protection) current is therefore: Iprot = V----R-t-h--s--(-e-I--mn---s-a-e-x---)- [A]
If the power device current exceeds the current limit, the
comparator trips and turns off the power device.
The power device is typically turned off in 210 ns
(see tD in Chapter “Characteristics”).
The availability of the current sense resistor off-chip for
programming the OCP trip level increases design flexibility
for the power supply designer. An off-chip current sense
resistor also reduces the risk of an OCP condition being
sensed incorrectly. At power MOSFET turn-on the
V/t limiters capacitance discharge current does not
have to flow through the sense resistor, because this
capacitor can be connected between drain and source of
the power MOSFET directly.
The Leading Edge Blanking (LEB) circuit works together
with the OCP circuit and inhibits the operation of the OCP
comparator for a short duration (see tLEB in
Chapter “Characteristics”) when the power device is
turned on. This ensures that the power device is not turned
off prematurely due to false sensing of an OCP condition
because of current spikes caused by discharge of
primary-side snubber and parasitic capacitances.
LEB time is not fixed and it tracks the oscillator frequency.
1999 Apr 20
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