|
|
|
부품번호 | SMP100MC-120 기능 |
|
|
기능 | TRISIL FOR TELECOM EQUIPMENT PROTECTION | ||
제조업체 | STMicroelectronics | ||
로고 | |||
® SMP100MC
TRISIL™ FOR TELECOM EQUIPMENT PROTECTION
FEATURES
■ Bidirectional crowbar protection
■ Voltage: range from 120V to 270V
■ Low VBO / VR ratio
■ Micro capacitance from 20pF to 30pF @ 50V
■ Low leakage current : IR = 2µA max
■ Holding current: IH = 150 mA min
■ Repetitive peak pulse current :
IPP = 100 A (10/1000µs)
MAIN APPLICATIONS
Any sensitive equipment requiring protection
against lightning strikes and power crossing.
These devices are dedicated to central office pro-
tection as they comply with the most stressfull
standards.
Their Micro Capacitance make them suitable for
ADSL2+ and low end VDSL.
DESCRIPTION
The SMP100MC is a series of micro capacitance
transient surge arrestors designed for the protec-
tion of high debit rate communication equipment.
Its micro capacitance avoids any distortion of the
signal and is compatible with digital transmission
line cards (ADSL, VDSL, ISDN...).
Compatible with Cooper Bussmann fuse:
TCP 1.25A.
BENEFITS
Trisils are not subject to ageing and provide a fail
safe mode in short circuit for a better protection.
They are used to help equipment to meet main
standards such as UL60950, IEC950 / CSA C22.2
and UL1459. They have UL94 V0 approved resin.
SMB package is JEDEC registered (DO-214AA).
Trisils comply with the following standards GR-
1089 Core, ITU-T-K20/K21, VDE0433, VDE0878,
IEC61000-4-5 and FCC part 68.
SMB
(JEDEC DO-214AA)
Table 1: Order Codes
Part Number
SMP100MC-120
SMP100MC-140
SMP100MC-160
SMP100MC-200
SMP100MC-230
SMP100MC-270
Marking
ML12
ML14
ML16
ML20
ML23
ML27
Figure 1: Schematic Diagram
December 2004
REV. 1
1/10
SMP100MC
Figure 2: Pulse waveform
%IPP
100
Repetitive peak pulse current
tr = rise time (µs)
tp = pulse duration time (µs)
50
0
tr tp
t
Figure 4: On-state voltage versus on-state
current (typical values)
IT(A)
100
Tj=25°C
VT(V)
10
012345678
Figure 6: Relative variation of breakover
voltage versus junction temperature
VBO[Tj] / VBO[Tj=25°C]
1.08
1.07
1.06
1.05
1.04
1.03
1.02
1.01
1.00
0.99
0.98
0.97
0.96
0.95 Tj(°C)
0.94
-40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130
Figure 3: Non repetitive surge peak on-state
current versus overload duration
ITSM(A)
70
60
F=50Hz
Tj initial = 25°C
50
40
30
20
10
0
1.E-02
1.E-01
t(s)
1.E+00
1.E+01
1.E+02
1.E+03
Figure 5: Relative variation of holding current
versus junction temperature
IH[Tj] / IH[Tj=25°C]
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2 Tj(°C)
0.0
-40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130
Figure 7: Relative variation of leakage current
versus junction temperature (typical values)
IR[Tj] / IR[Tj=25°C]
1.E+03
VR=243V
1.E+02
1.E+01
1.E+00
25
Tj(°C)
50 75
100
125
4/10
4페이지 Figure 10: Test circuit 1 for Dynamic IBO and VBO parameters
100 V / µs, di /dt < 10 A / µs, Ipp = 100 A
2Ω
U 10 µF
45 Ω
66 Ω 470 Ω
SMP100MC
83 Ω
0.36 nF
46 µH
KeyTek 'System 2' generator with PN246I module
1 kV / µs, di /dt < 10 A / µs, Ipp = 10 A
26 µH
250 Ω
47 Ω
46 µH
U 60 µF 12 Ω
KeyTek 'System 2' generator with PN246I module
Figure 11: Test circuit 2 for IBO and VBO parameters
K
ton = 20ms
220V 50Hz
Vout
R1 = 140Ω
R2 = 240Ω
DUT
1/4
IBO
measurement
VBO
measurement
TEST PROCEDURE
Pulse test duration (tp = 20ms):
● for Bidirectional devices = Switch K is closed
● for Unidirectional devices = Switch K is open
VOUT selection:
● Device with VBO < 200V ➔ VOUT = 250 VRMS, R1 = 140Ω
● Device with VBO ≤ 200V ➔ VOUT = 480 VRMS, R2 = 240Ω
7/10
7페이지 | |||
구 성 | 총 10 페이지수 | ||
다운로드 | [ SMP100MC-120.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
SMP100MC-120 | TRISIL FOR TELECOM EQUIPMENT PROTECTION | STMicroelectronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |