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SMP100MC-120 데이터시트 PDF




STMicroelectronics에서 제조한 전자 부품 SMP100MC-120은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 SMP100MC-120 자료 제공

부품번호 SMP100MC-120 기능
기능 TRISIL FOR TELECOM EQUIPMENT PROTECTION
제조업체 STMicroelectronics
로고 STMicroelectronics 로고


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SMP100MC-120 데이터시트, 핀배열, 회로
® SMP100MC
TRISIL™ FOR TELECOM EQUIPMENT PROTECTION
FEATURES
Bidirectional crowbar protection
Voltage: range from 120V to 270V
Low VBO / VR ratio
Micro capacitance from 20pF to 30pF @ 50V
Low leakage current : IR = 2µA max
Holding current: IH = 150 mA min
Repetitive peak pulse current :
IPP = 100 A (10/1000µs)
MAIN APPLICATIONS
Any sensitive equipment requiring protection
against lightning strikes and power crossing.
These devices are dedicated to central office pro-
tection as they comply with the most stressfull
standards.
Their Micro Capacitance make them suitable for
ADSL2+ and low end VDSL.
DESCRIPTION
The SMP100MC is a series of micro capacitance
transient surge arrestors designed for the protec-
tion of high debit rate communication equipment.
Its micro capacitance avoids any distortion of the
signal and is compatible with digital transmission
line cards (ADSL, VDSL, ISDN...).
Compatible with Cooper Bussmann fuse:
TCP 1.25A.
BENEFITS
Trisils are not subject to ageing and provide a fail
safe mode in short circuit for a better protection.
They are used to help equipment to meet main
standards such as UL60950, IEC950 / CSA C22.2
and UL1459. They have UL94 V0 approved resin.
SMB package is JEDEC registered (DO-214AA).
Trisils comply with the following standards GR-
1089 Core, ITU-T-K20/K21, VDE0433, VDE0878,
IEC61000-4-5 and FCC part 68.
SMB
(JEDEC DO-214AA)
Table 1: Order Codes
Part Number
SMP100MC-120
SMP100MC-140
SMP100MC-160
SMP100MC-200
SMP100MC-230
SMP100MC-270
Marking
ML12
ML14
ML16
ML20
ML23
ML27
Figure 1: Schematic Diagram
December 2004
REV. 1
1/10




SMP100MC-120 pdf, 반도체, 판매, 대치품
SMP100MC
Figure 2: Pulse waveform
%IPP
100
Repetitive peak pulse current
tr = rise time (µs)
tp = pulse duration time (µs)
50
0
tr tp
t
Figure 4: On-state voltage versus on-state
current (typical values)
IT(A)
100
Tj=25°C
VT(V)
10
012345678
Figure 6: Relative variation of breakover
voltage versus junction temperature
VBO[Tj] / VBO[Tj=25°C]
1.08
1.07
1.06
1.05
1.04
1.03
1.02
1.01
1.00
0.99
0.98
0.97
0.96
0.95 Tj(°C)
0.94
-40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130
Figure 3: Non repetitive surge peak on-state
current versus overload duration
ITSM(A)
70
60
F=50Hz
Tj initial = 25°C
50
40
30
20
10
0
1.E-02
1.E-01
t(s)
1.E+00
1.E+01
1.E+02
1.E+03
Figure 5: Relative variation of holding current
versus junction temperature
IH[Tj] / IH[Tj=25°C]
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2 Tj(°C)
0.0
-40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130
Figure 7: Relative variation of leakage current
versus junction temperature (typical values)
IR[Tj] / IR[Tj=25°C]
1.E+03
VR=243V
1.E+02
1.E+01
1.E+00
25
Tj(°C)
50 75
100
125
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SMP100MC-120 전자부품, 판매, 대치품
Figure 10: Test circuit 1 for Dynamic IBO and VBO parameters
100 V / µs, di /dt < 10 A / µs, Ipp = 100 A
2
U 10 µF
45
66 470
SMP100MC
83
0.36 nF
46 µH
KeyTek 'System 2' generator with PN246I module
1 kV / µs, di /dt < 10 A / µs, Ipp = 10 A
26 µH
250
47
46 µH
U 60 µF 12
KeyTek 'System 2' generator with PN246I module
Figure 11: Test circuit 2 for IBO and VBO parameters
K
ton = 20ms
220V 50Hz
Vout
R1 = 140
R2 = 240
DUT
1/4
IBO
measurement
VBO
measurement
TEST PROCEDURE
Pulse test duration (tp = 20ms):
for Bidirectional devices = Switch K is closed
for Unidirectional devices = Switch K is open
VOUT selection:
Device with VBO < 200V VOUT = 250 VRMS, R1 = 140
Device with VBO 200V VOUT = 480 VRMS, R2 = 240
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SMP100MC-120

TRISIL FOR TELECOM EQUIPMENT PROTECTION

STMicroelectronics
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