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Datasheet P90CL301BFH-PDF.HTML Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
P90 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | P9006EDG | P-Channel Enhancement Mode MOSFET P9006EDG
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-60V
90mΩ @VGS = -10V
ID -15A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -60
Gate-Source Voltage
VGS ±20
Continuou  UNIKC mosfet | | |
| 2 | P9006EDG | P-Channel Logic Level Enhancement NIKO-SEM
P-Channel Logic Level Enhancement
Mode Field Effect Transistor (Preliminary)
P9006EDG
TO-252 Lead-Free
D
PRODUCT SUMMARY V(BR)DSS -60V RDS(ON) 90m ID -8A
G S
1. GATE 2. DRAIN 3. SOURCE
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Sourc  Niko-Sem data | | |
| 3 | P9006EI | P-Channel Enhancement Mode MOSFET P9006EI
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-60V
90mΩ @VGS = -10V
ID -18A
TO-251
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current1 Pulsed Drain Cu UNIKC mosfet | | |
| 4 | P9006EL | P-Channel Enhancement Mode MOSFET P9006EL
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-60V
90mΩ @VGS = 10V
ID -4A
SOT- 223
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current1 Pulsed Drain Cu UNIKC mosfet | | |
| 5 | P9006ESG | P-Channel Enhancement Mode MOSFET P9006ESG
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-60V
90mΩ @VGS = 10V
ID -18A
TO-263
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -60
Gate-Source Voltage
VGS ±20
Continuous UNIKC mosfet | | |
| 6 | P9006ETF | P-Channel Enhancement Mode MOSFET P9006ETF
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-60 90mΩ @VGS = 10V
ID -15A
TO-220F
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -60
Gate-Source Voltage
VGS ±20
Continuous UNIKC mosfet | | |
| 7 | P9006EVG | P-Channel Enhancement Mode MOSFET P9006EVG
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-60V
90mΩ @VGS = -10V
ID -4.5A
SOP- 08
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -60
Gate-Source Voltage
VGS ±20
Continu UNIKC mosfet | |
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