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PDF SLVG2.8 Data sheet ( Hoja de datos )
| Número de pieza | SLVG2.8 | |
| Descripción | EPD TVS Diodes For ESD and Latch-Up Protection | |
| Fabricantes | Semtech Corporation | |
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PROTECTION PRODUCTS
Description
The SLV series of transient voltage suppressors are
designed to protect low voltage, state-of-the-art CMOS
semiconductors from transients caused by electro-
static discharge (ESD), cable discharge events (CDE),
lightning and other induced voltage surges.
The devices are constructed using Semtech’s propri-
etary EPD process technology. The EPD process pro-
vides low standoff voltages with significant reductions
in leakage currents and capacitance over silicon-
avalanche diode processes. The SLVE2.8 & SLVG2.8
are in a SOT-143 package and have a low 2.8V work-
ing voltage. They may be used to protect one line in
differential or common mode. The “flow-thru” design
minimizes trace inductance and reduces voltage
overshoot associated with ESD events.
The SLV is specifically designed to protect low voltage
components such as Ethernet transceivers, laser
diodes, ASICs, and high-speed RAM. The low clamping
voltage of the SLV minimizes the stress on the pro-
tected IC.
The SLV series TVS diodes will exceed the surge re-
quirements of IEC 61000-4-2, Level 4.
SLVE2.8 & SLVG2.8
EPD TVS™ Diodes For
ESD and Latch-Up Protection
Features
! 300 Watts peak pulse power (tp = 8/20µs)
! Transient protection for low voltage data lines to
IEC 61000-4-2 (ESD) 15kV (air), 8kV (contact)
IEC 61000-4-4 (EFT) 40A (tp = 5/50ns)
IEC 61000-4-5 (Lightning) 24A (tp = 8/20µs)
! Protects one line
! Comprehensive pin out for easy board layout
! Low capacitance
! Low leakage current
! Low operating and clamping voltages
! Solid-state EPD TVS process technology
Mechanical Characteristics
! JEDEC SOT-143 package
! Molding compound flammability rating: UL 94V-0
! Marking : Marking code
! Packaging : Tape and Reel per EIA 481
Applications
! ESD and Latch-up Protection
! Analog Inputs
! WAN/LAN Equipment
! Low Voltage ASICs
! Desktops, Servers, Notebooks & Handhelds
! Portable Instrumentation
! Base Stations
! Laser Diode Protection
Schematic & Pin Configuration
Schematic & PIN Configuration
4
1
4
1
23
SLVG2.8 (Top View)
Revision 1/18/2001
23
SLVE2.8 (Top View)
1 www.semtech.com
1 page  
PROTECTION PRODUCTS
Applications Information (continued)
EPD TVS™ Characteristics
The SLV series is constructed using Semtech’s propri-
etary EPD technology. The structure of the EPD TVS is
vastly different from the traditional pn-junction devices.
At voltages below 5V, high leakage current and junction
capacitance render conventional avalanche technology
impractical for most applications. However, by utilizing
the EPD technology, the SLVE2.8 & SLVG2.8 can
effectively operate at 2.8V while maintaining excellent
electrical characteristics.
The EPD TVS employs a complex nppn structure in
contrast to the pn structure normally found in tradi-
tional silicon-avalanche TVS diodes. The EPD mecha-
nism is achieved by engineering the center region of
the device such that the reverse biased junction does
not avalanche, but will “punch-through” to a conduct-
ing state. This structure results in a device with supe-
rior dc electrical parameters at low voltages while
maintaining the capability to absorb high transient
currents.
The IV characteristic curve of the EPD device is shown
in Figure 1. The device represents a high impedance
to the circuit up to the working voltage (VRWM). During a
transient event, the device will begin to conduct as it is
biased in the reverse direction. When the punch-
through voltage (VPT) is exceeded, the device enters a
low impedance state, diverting the transient current
away from the protected circuit. When the device is
conducting current, it will exhibit a slight “snap-back” or
negative resistance characteristic due to its structure.
This must be considered when connecting the device
to a power supply rail. To return to a non-conducting
state, the current through the device must fall below
the snap-back current (approximately < 50mA).
SLVE2.8 & SLVG2.8
VBRR
IPP
I SB
I PT
IR
I BRR
VRWM VSB VPT VC
EPD TVS VI Characteristic Curve
2001 Semtech Corp.
5
www.semtech.com
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SLVG2.8.PDF ] | |
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