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PDF SLVU2.8TG Data sheet ( Hoja de datos )
| Número de pieza | SLVU2.8TG | |
| Descripción | Low Voltage EPD TVS Diodes For ESD and Latch-Up Protection | |
| Fabricantes | Semtech Corporation | |
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PROTECTION PRODUCTS
Description
The SLV series of transient voltage suppressors are
designed to protect low voltage, state-of-the-art CMOS
semiconductors from transients caused by electro-
static discharge (ESD), cable discharge events (CDE),
lightning and other induced voltage surges.
The devices are constructed using Semtechs propri-
etary EPD process technology. The EPD process pro-
vides low standoff voltages with significant reductions
in leakage currents and capacitance over silicon-
avalanche diode processes. The SLVU2.8 features an
integrated low capacitance compensation diode that
allows the device to be configured to protect one
unidirectional line or, when paired with a second
SLVU2.8, two high-speed line pairs. The low capaci-
tance design of the SLVU2.8 means signal integrity is
preserved in high-speed applications such as 10/100
Ethernet.
The SLVU2.8 is in an SOT23 package and has a low
2.8 volt working voltage. It is specifically designed to
protect low voltage components such as Ethernet
transceivers, laser diodes, ASICs, and high-speed RAM.
The low clamping voltage of the SLVU2.8 minimizes the
stress on the protected IC.
The SLV series TVS diodes will exceed the surge re-
quirements of IEC 61000-4-2, Level 4.
SLVU2.8
Low Voltage EPD TVS Diode
For ESD and Latch-Up Protection
Features
u 400 Watts peak pulse power (tp = 8/20µs)
u Transient protection for high speed data lines to
IEC 61000-4-2 (ESD) 15kV (air), 8kV (contact)
IEC 61000-4-4 (EFT) 40A (tp = 5/50ns)
IEC 61000-4-5 (Lightning) 24A (tp = 8/20µs)
u One device protects one unidirectional line
u Two devices protect two high-speed line pairs
u Low capacitance
u Low leakage current
u Low operating and clamping voltages
u Solid-state EPD TVS process technology
Mechanical Characteristics
u JEDEC SOT23 package
u Molding compound flammability rating: UL 94V-0
u Marking : U2.8
u Packaging : Tape and Reel per EIA 481
Applications
u 10/100 Ethernet
u WAN/LAN Equipment
u Switching Systems
u Desktops, Servers, Notebooks & Handhelds
u Laser Diode Protection
u Base Stations
Circuit Diagram
Schematic & PIN Configuration
3
1
Revision 9/2000
2
1
3
2
SOT23 (Top View)
1 www.semtech.com
1 page  
PROTECTION PRODUCTS
Applications Information (continued)
EPD TVS Characteristics
The SLVU2.8 is constructed using Semtechs propri-
etary EPD technology. The structure of the EPD TVS is
vastly different from the traditional pn-junction devices.
At voltages below 5V, high leakage current and junction
capacitance render conventional avalanche technology
impractical for most applications. However, by utilizing
the EPD technology, the SLVU2.8 can effectively
operate at 2.8V while maintaining excellent electrical
characteristics.
The EPD TVS employs a complex nppn structure in
contrast to the pn structure normally found in tradi-
tional silicon-avalanche TVS diodes. The EPD mecha-
nism is achieved by engineering the center region of
the device such that the reverse biased junction does
not avalanche, but will punch-through to a conduct-
ing state. This structure results in a device with supe-
rior dc electrical parameters at low voltages while
maintaining the capability to absorb high transient
currents.
The IV characteristic curve of the EPD device is shown
in Figure 1. The device represents a high impedance
to the circuit up to the working voltage (VRWM). During a
transient event, the device will begin to conduct as it is
biased in the reverse direction. When the punch-
through voltage (VPT) is exceeded, the device enters a
low impedance state, diverting the transient current
away from the protected circuit. When the device is
conducting current, it will exhibit a slight snap-back or
negative resistance characteristic due to its structure.
This must be considered when connecting the device
to a power supply rail. To return to a non-conducting
state, the current through the device must fall below
the snap-back current (approximately < 50mA).
SLVU2.8
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EPD TVS VI Characteristic Curve
ã 2000 Semtech Corp.
5
www.semtech.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SLVU2.8TG.PDF ] | |
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