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PDF PA2423 Data sheet ( Hoja de datos )
| Número de pieza | PA2423 | |
| Descripción | 2.4 GHz Bluetooth Class 1 Power Amplifier IC Production Information | |
| Fabricantes | SiGe Semiconductor Inc. | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de PA2423 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
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PA2423MB
2.4 GHz Bluetooth Class 1 Power Amplifier IC
Production Information
Applications
Bluetoothtm Class 1
USB Dongles
Laptops
Access Points
Cordless Piconets
Features
+22.7 dBm at 45% Power Added Efficiency
Low current 80mA typical @ Pout=+20 dBm
Temperature stability better than 1dB
Power-control and Power-down modes
Single 3.3 V Supply Operation
Temperature Rating: -40C to +85C
8 lead Exposed Pad MSOP Plastic Package
Ordering Information
Type
Package
Shipping
Method
PA2423MB
8 - MSOP
Tape and reel
Tubes -samples
PA2423MB-EV Evaluation kit
Product Description
A monolithic, high-efficiency, silicon-germanium
power amplifier IC, the PA2423MB is designed
for class 1 Bluetoothtm 2.4 GHz radio
applications. It delivers +22.7 dBm output power
with 45% power-added efficiency – making it
capable of overcoming insertion losses of up to
2.7 dB between amplifier output and antenna
input in class 1 Bluetoothtm applications.
The amplifier features:
an analog control input for improving PAE at
reduced output power levels;
a digital control input for controlling power up
and power down modes of operation.
An on-chip ramping circuit provides the turn-
on/off switching of amplifier output with less than
3dB overshoot, meeting the Bluetoothtm
specification 1.1.
The PA2423MB operates at 3.3V DC. At typical
output power level (+22.7 dBm), its current
consumption is 125 mA.
The silicon/silicon-germanium structure of the
PA2423MB – and its exposed-die-pad package,
soldered to the system PCB – provide high
thermal conductivity and a subsequently low
junction temperature. This device is capable of
operating at a duty cycle of 100 percent.
Functional Block Diagram
IN
Stage 1
GND
VCTL
Bias Generator
Interstage
Match
VCC1
VCC0 VRAMP
Ramp
Circuitry
Stage 2
OUT/ VCC2
GND
DOC# 05PDS001 Rev 9
07/26/2001
Page 1 of 10
1 page  
PA2423MB
2.4 GHz Bluetooth Class 1 Power Amplifier IC
Production Information
Typical Performance Characteristics
Test Conditions using SiGe PA2423MB-EV:
VCC0=VCC1=VCC2=VRAMP=3.3V, VCTL = 3.3V, PIN = +2 dBm, TA = 25°C, f =
2.45GHz, Input and Output externally matched to 50Ω, unless otherwise
noted.
Pout vs Frequency
Icc vs Frequency
23
22
21
20
19
18
17
16
15
2.3 2.3 2.4 2.4 2.5 2.5 2.6 2.6 2.7
Frequency (GHz)
140.00
130.00
120.00
110.00
100.00
90.00
80.00
70.00
60.00
2.3
2.3 2.4 2.4 2.5 2.5 2.6 2.6
Frequency (GHz)
2.7
Output Power, Gain vs Input Power
(Frequency=2.45GHz)
25 30.00
20 25.00
15 20.00
10 15.00
5 10.00
0
-28
Pout
Gain
-24 -20 -16 -12 -8 -4 0
Input Power (dBm)
4
5.00
8
PAE vs Input Power
50
45
40
35
30
25
20
15
10
5
0
-28 -24 -20 -16 -12
-8
-4
0
4
8
Input Power(dBm)
DOC# 05PDS001 Rev 9
07/26/2001
Page 5 of 10
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet PA2423.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| PA2423 | 2.4 GHz Bluetooth Class 1 Power Amplifier IC Production Information | SiGe Semiconductor Inc. |
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| PA2423 | 2.4 GHz Bluetooth Class 1 Power Amplifier IC Preliminary Information | SiGe Semiconductor Inc. |
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