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PA2423 데이터시트 PDF




SiGe Semiconductor Inc.에서 제조한 전자 부품 PA2423은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

PDF 형식의 PA2423 자료 제공

부품번호 PA2423 기능
기능 2.4 GHz Bluetooth Class 1 Power Amplifier IC Preliminary Information
제조업체 SiGe Semiconductor Inc.
로고 SiGe Semiconductor  Inc. 로고


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PA2423 데이터시트, 핀배열, 회로
PA2423MB
2.4 GHz Bluetooth Class 1 Power Amplifier IC
Production Information
Applications
Bluetoothtm Class 1
USB Dongles
Laptops
Access Points
Cordless Piconets
Features
+22.7 dBm at 45% Power Added Efficiency
Low current 80mA typical @ Pout=+20 dBm
Temperature stability better than 1dB
Power-control and Power-down modes
Single 3.3 V Supply Operation
Temperature Rating: -40C to +85C
8 lead Exposed Pad MSOP Plastic Package
Ordering Information
Type
Package
Shipping
Method
PA2423MB
8 - MSOP
Tape and reel
Tubes -samples
PA2423MB-EV Evaluation kit
Product Description
A monolithic, high-efficiency, silicon-germanium
power amplifier IC, the PA2423MB is designed
for class 1 Bluetoothtm 2.4 GHz radio
applications. It delivers +22.7 dBm output power
with 45% power-added efficiency – making it
capable of overcoming insertion losses of up to
2.7 dB between amplifier output and antenna
input in class 1 Bluetoothtm applications.
The amplifier features:
an analog control input for improving PAE at
reduced output power levels;
a digital control input for controlling power up
and power down modes of operation.
An on-chip ramping circuit provides the turn-
on/off switching of amplifier output with less than
3dB overshoot, meeting the Bluetoothtm
specification 1.1.
The PA2423MB operates at 3.3V DC. At typical
output power level (+22.7 dBm), its current
consumption is 125 mA.
The silicon/silicon-germanium structure of the
PA2423MB – and its exposed-die-pad package,
soldered to the system PCB – provide high
thermal conductivity and a subsequently low
junction temperature. This device is capable of
operating at a duty cycle of 100 percent.
Functional Block Diagram
IN
Stage 1
GND
VCTL
Bias Generator
Interstage
Match
VCC1
VCC0 VRAMP
Ramp
Circuitry
Stage 2
OUT/ VCC2
GND
DOC# 05PDS001 Rev 9
07/26/2001
Page 1 of 10




PA2423 pdf, 반도체, 판매, 대치품
PA2423MB
2.4 GHz Bluetooth Class 1 Power Amplifier IC
Production Information
AC Electrical Characteristics
Conditions
VCC0 = VCC1 = VCC2 = VRAMP =3.3V, VCTL = 3.3V, PIN =+2 dBm, TA =25°C, f =2.45 GHz,
Input and Output externally matched to 50Ω, unless otherwise noted.
Symbol
fL-U
Pout
Ptemp
dPOUT /dVCTL
PAE
GVAR
2f, 3f, 4f, 5f
IS21 IOFF
IS12I
STAB
Note
Parameter
3 Frequency Range
1 Output Power @ PIN =+2 dBm, VCTL = 3.3V
1 Output Power @ PIN =+2 dBm, VCTL =0.4V
3 Output Power variation over temperature (-4C <TA <+8C)
3 Control Voltage Sensitivity
Power Added Efficiency at +22.5 dBm Output Power
3 Gain Variation over band (2400-2500 MHz)
3,4 Harmonics
2 Isolation in “OFF” State, PIN = +2dBm, VRAMP = 0V
2 Reverse Isolation
2 Stability (PIN = +2dBm, Load VSWR = 6:1)
Min. Typ. Max. Unit
2400
2500 MHz
21 22.7 23.5 dBm
-20 0 dBm
1 2 dB
120 dBm/V
45 %
0.7 1.0
dB
-35 -30 dBc
20 25
dB
32 42
dB
All non-harmonically related
outputs less than -50 dBc
Notes:
(1) Guaranteed by production test at TA =25°C.
(2) Guaranteed by design only
(3) Guaranteed by design and characterization
(4) Harmonic levels are greatly affected by topology of external matching networks.
DOC# 05PDS001 Rev 9
07/26/2001
Page 4 of 10

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PA2423 전자부품, 판매, 대치품
PA2423MB
2.4 GHz Bluetooth Class 1 Power Amplifier IC
Production Information
Package Dimensions
The PA2423MB is packaged in a 3.0 mm x 3.0 mm 8 lead MSOP package. The underside of the package is an exposed die-pad structure. This allows
for direct soldering to the PCB for enhanced thermal conductivity. The package dimensions are shown in the drawing below.
DOC# 05PDS001 Rev 9
07/26/2001
Page 7 of 10

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관련 데이터시트

부품번호상세설명 및 기능제조사
PA2423

2.4 GHz Bluetooth Class 1 Power Amplifier IC Production Information

SiGe Semiconductor  Inc.
SiGe Semiconductor Inc.
PA2423

2.4 GHz Bluetooth Class 1 Power Amplifier IC Preliminary Information

SiGe Semiconductor  Inc.
SiGe Semiconductor Inc.

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