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PDF PA2423L Data sheet ( Hoja de datos )
| Número de pieza | PA2423L | |
| Descripción | 2.4 GHz Bluetooth Class 1 Power Amplifier IC Preliminary Information | |
| Fabricantes | SiGe Semiconductor Inc. | |
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PA2423L
2.4 GHz Bluetooth Class 1 Power Amplifier IC
Preliminary Information
Applications
Bluetoothtm Class 1
USB Dongles
Laptops
Access Points
Cordless Piconets
Features
+22.5dBm at 45% Power Added Efficiency
Low current 80mA typical @ Pout=+20 dBm
Temperature stability better than 1dB
Power-control and Power-down modes
Single 3.3 V Supply Operation
Temperature rating: -40C to +85C
Very small plastic package - 6 lead LPCC
(1.6mm x 3.0mm)
Ordering Information
Type
PA2423L
Package
6 - LPCC
PA2423L-EV Evaluation kit
Shipping
Method
Tape and reel
Tubes -samples
Functional Block Diagram
Product Description
A monolithic, high-efficiency, silicon-germanium
power amplifier IC, the PA2423L is designed for
class 1 Bluetoothtm 2.4 GHz radio applications. It
delivers +22.5 dBm output power with 45%
power-added efficiency – making it capable of
overcoming insertion losses of up to 2.5 dB
between amplifier output and antenna input in
class 1 Bluetoothtm applications.
The amplifier features:
an analog control input for improving PAE at
reduced output power levels;
a digital control input for controlling power up
and power down modes of operation.
An on-chip ramping circuit provides the turn-
on/off switching of amplifier output with less than
3dB overshoot, meeting the Bluetoothtm
specification 1.1.
The PA2423L operates at 3.3V DC. At typical
output power level (+22.5 dBm), its current
consumption is 125 mA.
The silicon/silicon-germanium structure of the
PA2423L – and its exposed-die-pad package,
soldered to the system PCB – provide high
thermal conductivity and a subsequently low
junction temperature. This device is capable of
operating at a duty cycle of 100 percent.
IN
Stage 1
GND
VCTL
Bias Generator
Interstage
Match
VCC1
VCC0 VRAMP
Ramp
Circuitry
Stage 2
OUT/ VCC2
GND
DOC# 05PDS002 Rev 4
07/26/2001
Page 1 of 11
1 page  
PA2423L
2.4 GHz Bluetooth Class 1 Power Amplifier IC
Preliminary Information
PAE vs Input Power
50
45
40
35
30
25
20
15
10
5
0
-28 -24 -20 -16 -12 -8 -4 0 4 8
Input Power(dBm)
Pout vs Frequency
23. 0
22. 5
22. 0
21. 5
21. 0
20. 5
20. 0
19. 5
19. 0
18. 5
18. 0
2.2 2.3 2.4 2.5 2.6 2.7
Frequency (GHz)
DOC# 05PDS002 Rev 4
07/26/2001
Page 5 of 11
5 Page 
PA2423L
2.4 GHz Bluetooth Class 1 Power Amplifier IC
Preliminary Information
http://www.sige.com
Headquarters: Canada
Phone: +1 613 820 9244
Fax: +1 613 820 4933
2680 Queensview Drive
Ottawa ON K2B 8J9 Canada
U.S.A.
19925 Stevens Creek Blvd.
Suite 135
Cupertino, CA 95014-2358
Phone: +1 408 973 7835
Fax: +1 408 973 7235
United Kingdom
1010 Cambourne Business Park
Cambourne
Cambridge CB3 6DP
Phone: +44 1223 598 444
Fax: +44 1223 598 035
Information furnished is believed to be accurate and reliable and is provided on an “as is” basis. SiGe Semiconductor Inc.
assumes no responsibility or liability for the direct or indirect consequences of use of such information nor for any
infringement of patents or other rights of third parties, which may result from its use. No license or indemnity is granted by
implication or otherwise under any patent or other intellectual property rights of SiGe Semiconductor Inc. or third parties.
Specifications mentioned in this publication are subject to change without notice. This publication supersedes and
replaces all information previously supplied. SiGe Semiconductor Inc. products are NOT authorized for use in
implantation or life support applications or systems without express written approval from SiGe Semiconductor Inc.
The Bluetooth trademarks are owned by Bluetooth SIG Inc., USA.
Copyright 2001 SiGe Semiconductor
All Rights Reserved
DOC# 05PDS002 Rev 4
07/26/2001
Page 11 of 11
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet PA2423L.PDF ] | |
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