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PA2423L 데이터시트 PDF




SiGe Semiconductor Inc.에서 제조한 전자 부품 PA2423L은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 PA2423L 자료 제공

부품번호 PA2423L 기능
기능 2.4 GHz Bluetooth Class 1 Power Amplifier IC Preliminary Information
제조업체 SiGe Semiconductor Inc.
로고 SiGe Semiconductor  Inc. 로고


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PA2423L 데이터시트, 핀배열, 회로
PA2423L
2.4 GHz Bluetooth Class 1 Power Amplifier IC
Preliminary Information
Applications
Bluetoothtm Class 1
USB Dongles
Laptops
Access Points
Cordless Piconets
Features
+22.5dBm at 45% Power Added Efficiency
Low current 80mA typical @ Pout=+20 dBm
Temperature stability better than 1dB
Power-control and Power-down modes
Single 3.3 V Supply Operation
Temperature rating: -40C to +85C
Very small plastic package - 6 lead LPCC
(1.6mm x 3.0mm)
Ordering Information
Type
PA2423L
Package
6 - LPCC
PA2423L-EV Evaluation kit
Shipping
Method
Tape and reel
Tubes -samples
Functional Block Diagram
Product Description
A monolithic, high-efficiency, silicon-germanium
power amplifier IC, the PA2423L is designed for
class 1 Bluetoothtm 2.4 GHz radio applications. It
delivers +22.5 dBm output power with 45%
power-added efficiency – making it capable of
overcoming insertion losses of up to 2.5 dB
between amplifier output and antenna input in
class 1 Bluetoothtm applications.
The amplifier features:
an analog control input for improving PAE at
reduced output power levels;
a digital control input for controlling power up
and power down modes of operation.
An on-chip ramping circuit provides the turn-
on/off switching of amplifier output with less than
3dB overshoot, meeting the Bluetoothtm
specification 1.1.
The PA2423L operates at 3.3V DC. At typical
output power level (+22.5 dBm), its current
consumption is 125 mA.
The silicon/silicon-germanium structure of the
PA2423L – and its exposed-die-pad package,
soldered to the system PCB – provide high
thermal conductivity and a subsequently low
junction temperature. This device is capable of
operating at a duty cycle of 100 percent.
IN
Stage 1
GND
VCTL
Bias Generator
Interstage
Match
VCC1
VCC0 VRAMP
Ramp
Circuitry
Stage 2
OUT/ VCC2
GND
DOC# 05PDS002 Rev 4
07/26/2001
Page 1 of 11




PA2423L pdf, 반도체, 판매, 대치품
PA2423L
2.4 GHz Bluetooth Class 1 Power Amplifier IC
Preliminary Information
AC Electrical Characteristics
Conditions: VCC0 = VCC1 = VCC2 = VRAMP =3.3V, VCTL = 3.3V, PIN =+2 dBm, TA =25°C, f =2.45 GHz,
Input and Output externally matched to 50Ω, unless otherwise noted.
Symbol
Note
Parameter
Min. Typ.
Max. Unit
fL-U
Pout
Ptemp
dPOUT /dVCTL
PAE
GVAR
2f, 3f, 4f, 5f
IS21 IOFF
IS12I
STAB
3
1
1
3
3
3
3.4
2
2
2
Frequency Range
Output Power @ PIN =+2 dBm, VCTL = 3.3V
Output Power @ PIN =+2 dBm, VCTL =0.4V
Output Power variation over temperature (-4C <TA
<+8C)
Control Voltage Sensitivity
Power Added Efficiency at +22.5 dBm Output Power
Gain Variation over band (2400-2500 MHz)
Harmonics
Isolation in “OFF” State, PIN = +2dBm, VRAMP = 0V
Reverse Isolation
Stability (PIN = +2dBm, Load VSWR = 6:1)
2400
20
22.5
-20
2500
23.5
0
MHz
dBm
dBm
1 2 dB
120 dBm/V
45 %
0.7 1.0
dB
-40 -35 dBc
15 20
dB
32 42
dB
All non-harmonically related
outputs less than -50 dBc
Notes:
(1) Guaranteed by production test at TA =25°C.
(2) Guaranteed by design only
(3) Guaranteed by design and characterization
(4) Harmonic levels are greatly affected by topology of external matching networks.
Typical Performance Characteristics
Test Conditions: SiGe PA2423L-EV: VCC0=VCC1=VCC2=VRAMP=3.3V, VCTL = 3.3V, PIN = +2 dBm, TA = 25°C, f
= 2.45GHz, Input and Output externally matched to 50Ω, unless otherwise noted.
Pout, Icc vs Supply Voltage
24
23
22
21
20
19
18
17
16
15
14
2.4
2.6 2.8 3 3.2
Vcc(V)
Pout
150
142
134
126
118
110
102
94
86
78
70
3.4 3.6
Icc
Output Power, Gain vs Input Power
25 30.00
20 25.00
15 20.00
10 15.00
5 10.00
0
-28 -24 -20 -16 -12 -8 -4 0 4
Pout
Gain
Input Power (dBm)
5.00
8
DOC# 05PDS002 Rev 4
07/26/2001
Page 4 of 11

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PA2423L 전자부품, 판매, 대치품
PA2423L
2.4 GHz Bluetooth Class 1 Power Amplifier IC
Preliminary Information
PA output spectrum with BT modulated signal
30
20
10
0
-10
-20
-30
-40
-50
-60
2.4475
2.4485
2.4495
2.4505
Frequency (GHz)
2.4515
2.4525
DOC# 05PDS002 Rev 4
07/26/2001
Page 7 of 11

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관련 데이터시트

부품번호상세설명 및 기능제조사
PA2423

2.4 GHz Bluetooth Class 1 Power Amplifier IC Production Information

SiGe Semiconductor  Inc.
SiGe Semiconductor Inc.
PA2423

2.4 GHz Bluetooth Class 1 Power Amplifier IC Preliminary Information

SiGe Semiconductor  Inc.
SiGe Semiconductor Inc.

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