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PA28F008SC-85 데이터시트 PDF




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부품번호 PA28F008SC-85 기능
기능 BYTE-WIDE SmartVoltage FlashFile MEMORY FAMILY 4/ 8/ AND 16 MBIT
제조업체 Intel Corporation
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PA28F008SC-85 데이터시트, 핀배열, 회로
E
PRELIMINARY
BYTE-WIDE
SmartVoltage FlashFile™ MEMORY FAMILY
4, 8, AND 16 MBIT
28F004SC, 28F008SC, 28F016SC
Includes Commercial and Extended Temperature Specifications
n SmartVoltage Technology
2.7 V (Read-Only), 3.3 V or 5 V VCC
and 3.3 V, 5 V, or 12 V VPP
n High-Performance
4, 8 Mbit 85 ns Read Access Time
16 Mbit 95 ns Read Access Time
n Enhanced Data Protection Features
Absolute Protection with VPP = GND
Flexible Block Locking
Block Write Lockout during Power
Transitions
n Enhanced Automated Suspend Options
Program Suspend to Read
Block Erase Suspend to Program
Block Erase Suspend to Read
n Industry-Standard Packaging
40-Lead TSOP, 44-Lead PSOP
and 40 Bump µBGA* CSP
n High-Density 64-Kbyte Symmetrical
Erase Block Architecture
4 Mbit: Eight Blocks
8 Mbit: Sixteen Blocks
16 Mbit: Thirty-Two Blocks
n Extended Cycling Capability
100,000 Block Erase Cycles
n Low Power Management
Deep Power-Down Mode
Automatic Power Savings Mode
Decreases ICC in Static Mode
n Automated Program and Block Erase
Command User Interface
Status Register
n SRAM-Compatible Write Interface
n ETOX™ V Nonvolatile Flash
Technology
Intel’s byte-wide SmartVoltage FlashFile™ memory family renders a variety of density offerings in the same
package. The 4-, 8-, and 16-Mbit byte-wide FlashFile memories provide high-density, low-cost, nonvolatile,
read/write storage solutions for a wide range of applications. Their symmetrically-blocked architecture, flexible
voltage, and extended cycling provide highly flexible components suitable for resident flash arrays, SIMMs,
and memory cards. Enhanced suspend capabilities provide an ideal solution for code or data storage
applications. For secure code storage applications, such as networking, where code is either directly
executed out of flash or downloaded to DRAM, the 4-, 8-, and 16-Mbit FlashFile memories offer three levels
of protection: absolute protection with VPP at GND, selective hardware block locking, or flexible software
block locking. These alternatives give designers ultimate control of their code security needs.
This family of products is manufactured on Intel’s 0.4 µm ETOX™ V process technology. They come in
industry-standard packages: the 40-lead TSOP, ideal for board-constrained applications, and the rugged
44-lead PSOP. Based on the 28F008SA architecture, the byte-wide SmartVoltage FlashFile memory family
enables quick and easy upgrades for designs that demand state-of-the-art technology.
December 1997
Order Number: 290600-003




PA28F008SC-85 pdf, 반도체, 판매, 대치품
BYTE-WIDE SmartVoltage FlashFile™ MEMORY FAMILY
E
Number
-001
-002
-003
REVISION HISTORY
Description
Original version
Table 3 revised to reflect change in abbreviations from “W” for write to “P” for program.
Ordering information graphic (Appendix A) corrected: from PB = Ext. Temp. 44-Lead
PSOP to TB = Ext. Temp. 44-Lead PSOP.
Corrected nomenclature table (Appendix A) to reflect actual Operating Temperature/
Package information
Updated Ordering Information and table
Correction to table, Section 6.2.3. Under ILO Test Conditions, previously read VIN = VCC
or GND, corrected to VOUT = VCC or GND
Section 6.2.7, modified Program and Block Erase Suspend Latency Times
Added µBGA* CSP pinout and corrected error in PSOP pinout.
Added Design Consideration for VPP Program and Erase Voltages on future sub-0.4µ
devices.
4 PRELIMINARY

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PA28F008SC-85 전자부품, 판매, 대치품
E
BYTE-WIDE SmartVoltage FlashFile™ MEMORY FAMILY
DQ0 - DQ 7
Output
Buffer
Input
Buffer
4-Mbit: A0 - A18 ,
8-Mbit: A0 - A19 ,
16-Mbit: A0 - A20
Input
Buffer
Address
Latch
Address
Counter
Y
Decoder
X
Decoder
Identifier
Register
Status
Register
Data
Comparator
Y Gating
4-Mbit: Eight
8-Mbit: Sixteen
16-Mbit: Thirty-Two
64-Kbyte Blocks
Command
Register
I/O Logic
VCC
CE#
W E#
OE#
RP#
Write State
Machine
Program/Erase
Voltage Switch
RY/BY#
VPP
VCC
GND
Figure 1. Block Diagram
Table 2. Pin Descriptions
Sym
Type
Name and Function
A0–A20
INPUT ADDRESS INPUTS: Inputs for addresses during read and write operations.
Addresses are internally latched during a write cycle.
4 Mbit A0–A18
8 Mbit A0–A19
16 Mbit A0–A20
DQ0–DQ7
INPUT/ DATA INPUT/OUTPUTS: Inputs data and commands during CUI write cycles;
OUTPUT outputs data during memory array, status register, and identifier code read cycles.
Data pins float to high-impedance when the chip is deselected or outputs are
disabled. Data is internally latched during a write cycle.
CE#
INPUT CHIP ENABLE: Activates the device’s control logic, input buffers, decoders, and
sense amplifiers. CE#-high deselects the device and reduces power consumption to
standby levels.
RP#
INPUT
RESET/DEEP POWER-DOWN: When driven low, RP# inhibits write operations
which provides data protection during power transitions, puts the device in deep
power-down mode, and resets internal automation. RP#-high enables normal
operation. Exit from deep power-down sets the device to read array mode.
RP# at VHH enables setting of the master lock-bit and enables configuration of block
lock-bits when the master lock-bit is set. RP# = VHH overrides block lock-bits,
thereby enabling block erase and program operations to locked memory blocks.
Block erase, program, or lock-bit configuration with VIH < RP# < VHH produce
spurious results and should not be attempted.
OE#
INPUT OUTPUT ENABLE: Gates the device’s outputs during a read cycle.
PRELIMINARY
7

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부품번호상세설명 및 기능제조사
PA28F008SC-85

BYTE-WIDE SmartVoltage FlashFile MEMORY FAMILY 4/ 8/ AND 16 MBIT

Intel Corporation
Intel Corporation
PA28F008SC-85

BYTE-WIDE SmartVoltage FlashFile MEMORY FAMILY 4/ 8/ AND 16 MBIT

Intel Corporation
Intel Corporation

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