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PA28F200BX-B120 데이터시트 PDF




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부품번호 PA28F200BX-B120 기능
기능 2-MBIT (128K x 16/ 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
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PA28F200BX-B120 데이터시트, 핀배열, 회로
2-MBIT (128K x 16 256K x 8)
BOOT BLOCK
FLASH MEMORY FAMILY
28F200BX-T B 28F002BX-T B
Y x8 x16 Input Output Architecture
28F200BX-T 28F200BX-B
For High Performance and High
Integration 16-bit and 32-bit CPUs
Y x8-only Input Output Architecture
28F002BX-T 28F002BX-B
For Space Constrained 8-bit
Applications
Y Upgradeable to Intel’s SmartVoltage
Products
Y Optimized High-Density Blocked
Architecture
One 16-KB Protected Boot Block
Two 8-KB Parameter Blocks
One 96-KB Main Block
One 128 KB Main Block
Top or Bottom Boot Locations
Y Extended Cycling Capability
100 000 Block Erase Cycles
Y Automated Word Byte Write and
Block Erase
Command User Interface
Status Registers
Erase Suspend Capability
Y SRAM-Compatible Write Interface
Y Automatic Power Savings Feature
1 mA Typical ICC Active Current in
Static Operation
Y Hardware Data Protection Feature
Erase Write Lockout during Power
Transitions
Y Very High-Performance Read
60 80 120 ns Maximum Access Time
30 40 40 ns Maximum Output Enable
Time
Y Low Power Consumption
20 mA Typical Active Read Current
Y Reset Deep Power-Down Input
0 2 mA ICC Typical
Acts as Reset for Boot Operations
Y Extended Temperature Operation
b40 C to a85 C
Y Write Protection for Boot Block
Y Industry Standard Surface Mount
Packaging
28F200BX JEDEC ROM Compatible
44-Lead PSOP
56-Lead TSOP
28F002BX 40-Lead TSOP
Y 12V Word Byte Write and Block Erase
VPP e 12V g5% Standard
VPP e 12V g10% Option
Y ETOXTM III Flash Technology
5V Read
Y Independent Software Vendor Support
Other brands and names are the property of their respective owners
Information in this document is provided in connection with Intel products Intel assumes no liability whatsoever including infringement of any patent or
copyright for sale and use of Intel products except as provided in Intel’s Terms and Conditions of Sale for such products Intel retains the right to make
changes to these specifications at any time without notice Microcomputer Products may have minor variations to this specification known as errata
COPYRIGHT INTEL CORPORATION 1995
November 1995
Order Number 290448-005




PA28F200BX-B120 pdf, 반도체, 판매, 대치품
28F200BX-T B 28F002BX-T B
The Status Register (SR) indicates the status of the
WSM and whether the WSM successfully completed
the desired program or erase operation
Maximum Access Time of 60 ns (tACC) is achieved
over the commercial temperature range (0 C to
70 C) 5% VCC supply voltage range (4 75V to
5 25V) and 30 pF output load Refer to Figure 19
tACC vs Output Load Capacitance for larger output
loads Maximum Access Time of 80 ns (tACC) is
achieved over the commercial temperature range
10% VCC supply range (4 5V to 5 5V) and 100 pF
output load
IPP maximum Program current is 40 mA for x16
operation and 30 mA for x8 operation IPP Erase
current is 30 mA maximum VPP erase and pro-
gramming voltage is 11 4V to 12 6V (VPP e 12V
g5%) under all operating conditions As an op-
tion VPP can also vary between 10 8V to 13 2V (VPP
e 12V g10%) with a guaranteed number of 100
block erase cycles
Typical ICC Active Current of 25 mA is achieved
for the x16 products (28F200BX) typical ICC Active
Current of 20 mA is achieved for the x8 products
(28F200BX 28F002BX) Refer to the ICC active cur-
rent derating curves in this datasheet
The 2-Mbit boot block flash family is also designed
with an Automatic Power Savings (APS) feature to
minimize system battery current drain and allow for
very low power designs Once the device is ac-
cessed to read array data APS mode will immedi-
ately put the memory in static mode of operation
where ICC active current is typically 1 mA until the
next read is initiated
When the CE and RP pins are at VCC and the
BYTE pin (28F200BX-only) is at either VCC or
GND the CMOS Standby mode is enabled where
ICC is typically 50 mA
A Deep Power-Down Mode is enabled when the
RP pin is at ground minimizing power consumption
and providing write protection during power-up con-
ditions ICC current during deep power-down mode
is 0 20 mA typical An initial maximum access time
or Reset Time of 300 ns is required from RP
switching until outputs are valid Equivalently the
device has a maximum wake-up time of 215 ns until
writes to the Command User Interface are recog-
nized When RP is at ground the WSM is reset the
Status Register is cleared and the entire device is
protected from being written to This feature pre-
vents data corruption and protects the code stored
in the device during system reset The system Reset
pin can be tied to RP to reset the memory to nor-
mal read mode upon activation of the Reset pin
With on-chip program erase automation in the
2-Mbit family and the RP functionality for data pro-
4
tection when the CPU is reset and even if a program
or erase command is issued the device will not rec-
ognize any operation until RP returns to its normal
state
For the 28F200BX Byte-wide or Word-wide In-
put Output Control is possible by controlling the
BYTE pin When the BYTE pin is at a logic low
the device is in the byte-wide mode (x8) and data is
read and written through DQ 0 7 During the byte-
wide mode DQ 8 14 are tri-stated and DQ15 Ab1
becomes the lowest order address pin When the
BYTE pin is at a logic high the device is in the
word-wide mode (x16) and data is read and written
through DQ 0 15
1 3 Applications
The 2-Mbit boot block flash family combines high
density high performance cost-effective flash mem-
ories with blocking and hardware protection capabili-
ties Its flexibility and versatility will reduce costs
throughout the product life cycle Flash memory is
ideal for Just-In-Time production flow reducing sys-
tem inventory and costs and eliminating component
handling during the production phase During the
product life cycle when code updates or feature en-
hancements become necessary flash memory will
reduce the update costs by allowing either a user-
performed code change via floppy disk or a remote
code change via a serial link The 2-Mbit boot block
flash family provides full function blocked flash
memories suitable for a wide range of applications
These applications include Extended PC BIOS
Digital Cellular Phone program and data storage
Telecommunication boot firmware and various
other embedded applications where both program
and data storage are required
Reprogrammable systems such as personal com-
puters are ideal applications for the 2-Mbit flash
products Portable and handheld personal computer
applications are becoming more complex with the
addition of power management software to take ad-
vantage of the latest microprocessor technology
the availability of ROM-based application software
pen tablet code for electronic hand writing and diag-
nostic code Figure 1 shows an example of a
28F200BX-T application
This increase in software sophistication augments
the probability that a code update will be required
after the PC is shipped The 2-Mbit flash products
provide an inexpensive update solution for the note-
book and handheld personal computers while ex-
tending their product lifetime Furthermore the
2-Mbit flash products’ power-down mode provides
added flexibility for these battery-operated portable
designs which require operation at very low power
levels

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PA28F200BX-B120 전자부품, 판매, 대치품
28F400BX
28F200BX-T B 28F002BX-T B
28F400BX
28F004BX
Figure 4 TSOP Lead Configuration for x8 x16 28F200BX
290448 – 3
28F004BX
Figure 5 TSOP Lead Configuration for x8 28F002BX
290448 – 20
7

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PA28F200BX-B120

2-MBIT (128K x 16/ 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY

Intel Corporation
Intel Corporation

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