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부품번호 | RX1214B80W 기능 |
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기능 | NPN microwave power transistors | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
DISCRETE SEMICONDUCTORS
DATA SHEET
RX1214B80W; RX1214B130Y
NPN microwave power transistors
Product specification
Supersedes data of November 1994
1997 Feb 14
Philips Semiconductors
NPN microwave power transistors
Product specification
RX1214B80W; RX1214B130Y
THERMAL CHARACTERISTICS
SYMBOL
Rth j-mb
Rth mb-h
Zth j-h
PARAMETER
CONDITIONS
thermal resistance from junction to mounting base Tj = 120 °C
thermal resistance from mounting base to heatsink note 1
thermal impedance from junction to heatsink
tp = 150 µs; δ = 5%;
notes 1 and 2
Notes
1. See “Mounting recommendations in the General part of handbook SC19a”.
2. Equivalent thermal impedance under pulsed microwave operating conditions.
MAX.
1.75
0.2
0.4
UNIT
K/W
K/W
K/W
CHARACTERISTICS
Tmb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
IEBO
V(BR)CES
collector cut-off current
emitter cut-off current
collector-emitter breakdown voltage
CONDITIONS
IE = 0; VCB = 50 V
IC = 0; VEB = 1.5 V
IC = 60 mA; VBE = 0
MIN.
−
−
60
MAX.
6
0.6
−
UNIT
mA
mA
V
APPLICATION INFORMATION
Microwave performance up to Tmb = 25 °C in a common-base test circuit as shown in Fig.3.
MODE OF
OPERATION
CONDITIONS
f
(GHz)
VCC
(V)
PL
(W)
Gp
(dB)
Class C
tp = 150 µs; δ = 5%
1.2 to 1.4
50 ≥130; typ. 140 ≥7; typ. 7.5
tp = 500 µs; δ = 10%
1.2 to 1.4
40
typ. 80
typ. 8.5
ηC
(%)
≥35; typ. 39
typ. 40
List of components (see Fig.3)
COMPONENT
L1
C1
C2
C3
C4
DESCRIPTION
VALUE
0.5 mm copper wire
trimmer capacitor
0.6 − 5 pF
chip capacitor
tantalum capacitor
10 µF, 50 V
feedthrough bypass capacitor
DIMENSIONS
total length = 15 mm
CATALOGUE NO.
Tekelec, ref AT3-7271SL
Erie, ref.1250-003
1997 Feb 14
4
4페이지 Philips Semiconductors
NPN microwave power transistors
Product specification
RX1214B80W; RX1214B130Y
handbook, full pagewidth
1
0.5
2
0.2
+
j
0
–
j
0.2
1.2 GHz
Zi
0.2 0.5 1.3 1
1.4 GHz
2
5
5 10
10
∞
10
5
0.5 2
VCC = 50 V; ZO = 10 Ω; POUT = 130 W.
1 MGA255
Fig.6 Input impedance as a function of frequency, associated with optimum load impedance.
handbook, full pagewidth
1
0.5
2
0.2
ZL
5
1.4 GHz 1.3
+j
10
∞0.2 0.5 1 2 5 10
0
1.2 GHz
–j
10
0.2 5
0.5 2
VCC = 50 V; ZO = 10 Ω; POUT = 130 W.
1 MGA254
Fig.7 Load impedance as a function of frequency, associated with optimum input impedance.
1997 Feb 14
7
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RX1214B80W | NPN microwave power transistors | NXP Semiconductors |
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