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기능 NPN microwave power transistor
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RZ1214B35Y 데이터시트, 핀배열, 회로
DISCRETE SEMICONDUCTORS
DATA SHEET
RZ1214B35Y
NPN microwave power transistor
Product specification
Supersedes data of June 1992
1997 Feb 18




RZ1214B35Y pdf, 반도체, 판매, 대치품
Philips Semiconductors
NPN microwave power transistor
Product specification
RZ1214B35Y
THERMAL CHARACTERISTICS
Tj = 75 °C unless otherwise specified
SYMBOL
PARAMETER
Rth j-mb
Rth mb-h
Zth j-h
thermal resistance from junction to mounting-base
thermal resistance from mounting-base to heatsink
thermal resistance from junction to heatsink
CONDITIONS
note 1
tp = 100 µs; δ = 10 %;
notes 1 and 2
Notes
1. See “Mounting recommendations in the General part of handbook SC19a”.
2. Equivalent thermal impedance under pulsed microwave operating conditions.
MAX.
5
0.2
1
UNIT
K/W
K/W
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
V(BR)CBO
V(BR)CES
V(BR)EBO
ICBO
IEBO
collector-base breakdown voltage
collector-emitter breakdown voltage
emitter-base breakdown voltage
collector cut-off current
emitter cut-off current
CONDITIONS
IC = 20 mA; IE = 0
IC = 20 mA; RBE = 0
IC = 0; IE = 3 mA
VCB = 50 V; IE = 0
VEB = 1.5 V; IC = 0
MIN.
65
60
3
MAX.
2
0.2
UNIT
V
V
V
mA
mA
APPLICATION INFORMATION
The transistors are 100% tested under the following conditions
MODE OF
OPERATION
Class- C
CONDITIONS
f
(GHz)
tp = 150 µs; δ = 5% 1.2 to 1,4
tp = 300 µs; δ = 10% 1.2 to 1,4
VCC
(V)
50
50
PL
(W)
typ.40; >35
typ.40;
Gp
(dB)
typ.7.8; >7
typ.7
ηC
(%)
typ.35; >35
typ.35
Zi; ZL
()
see Fig 4
see Fig 4
1997 Feb 18
4

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RZ1214B35Y 전자부품, 판매, 대치품
Philips Semiconductors
NPN microwave power transistor
Product specification
RZ1214B35Y
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Feb 18
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NPN microwave power transistor

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