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Datasheet PA52-PDF.HTML Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
PA5 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | PA50 | Power Operational Amplifier POWER OPERATIONAL AMPLIFIERS
PA50 • PA50A
M I C R O T E C H N O L O G Y
HTTP://WWW.APEXMICROTECH.COM
(800) 546-APEX
(800) 546-2739
FEATURES
• HIGH INTERNAL DISSIPATION — 400 Watts • HIGH CURRENT — 40A Continuous, 100A PEAK • HIGH SLEW RATE — 50V/µs • OPTIONAL BOOST VOLTAGE INPU  APEX amplifier | | |
| 2 | PA502FMG | P-Channel Enhancement Mode MOSFET PA502FMG
P-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-20V
150mΩ @VGS = -4.5V
ID -3A
SOT-23
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -20
Gate-Source Voltage
VGS ±  UNIKC mosfet | | |
| 3 | PA502FMG | P-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM
P-Channel Logic Level Enhancement
Mode Field Effect Transistor
PA502FMG
SOT-23
Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-20 150m
ID -3A
D
G S
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Volta  NIKO-SEM transistor | | |
| 4 | PA503EMG | P-Channel Field Effect Transistor NIKO-SEM
P-Channel Logic Level Enhancement
Mode Field Effect Transistor(Preliminary)
PA503EMG
SOT-23
Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30 150m
ID -2A
D
G S
1 :GATE 2 :DRAIN 3 :SOURCE
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL NIKO-SEM transistor | | |
| 5 | PA504EM | P-Channel Enhancement Mode MOSFET PA504EM
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-40V
150mΩ @VGS = -10V
ID -1.5A
SOT-23
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current Pulsed Drain C UNIKC mosfet | | |
| 6 | PA504EV | P-Channel Enhancement Mode MOSFET PA504EV
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-40V
150mΩ @VGS = -10V
ID -2.7A
SOP- 8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -40
Gate-Source Voltage
VGS ±20
Continuo UNIKC mosfet | | |
| 7 | PA50A | Power Operational Amplifier POWER OPERATIONAL AMPLIFIERS
PA50 • PA50A
M I C R O T E C H N O L O G Y
HTTP://WWW.APEXMICROTECH.COM
(800) 546-APEX
(800) 546-2739
FEATURES
• HIGH INTERNAL DISSIPATION — 400 Watts • HIGH CURRENT — 40A Continuous, 100A PEAK • HIGH SLEW RATE — 50V/µs • OPTIONAL BOOST VOLTAGE INPU APEX amplifier | |
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| Número de pieza | Descripción | Fabricantes | |
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