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RFV10N50BE 데이터시트 PDF




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부품번호 RFV10N50BE 기능
기능 10A/ 500V/ Fast Switching N-Channel Enhancement-Mode Power MOSFETs
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RFV10N50BE 데이터시트, 핀배열, 회로
SEMICONDUCTOR
RFV10N50BE
August 1995
10A, 500V, Fast Switching N-Channel
Enhancement-Mode Power MOSFETs
Features
• 10A, 500V
• rDS(ON) = 0.480
• Very Fast Turn-Off Characteristics
• Nanosecond Switching Speeds
• Electrostatic Discharge Protected
• UIS Rating Curve
• SOA is Power Dissipation Limited
• High Input Impedance
Package
JEDEC STYLE 5 LEAD TO-247
Description
The RFV10N50BE is an N-Channel fast switching MOSFET transis-
tor that is designed for switching regulators, inverters and motor driv-
ers. The RFV10N50BE is a monolithic structure incorporating a high
voltage, high current MOSFET, a control MOSFET and ESD protec-
tion diodes. As indicated in the symbol to the right, the turn-on of the
main MOSFET is controlled by Gate 1 (G1). The control MOSFET,
controlled by Gate 2 (G2), is distributed throughout the structure. Gate
2 provides a very low impedance and inductive path to rapidly dis-
charge the gate of the main MOSFET. Gate 2 affords very fast turn-off
(typically less than 25ns) when desired. A separate return connection,
Source Kelvin (SK), is supplied for the gate drive circuit to avoid volt-
age induced transients from the output circuit during switching. The
RFV10N50BE can be operated directly from integrated circuits.
PACKAGE AVAILABILITY
PART NUMBER
PACKAGE
BRAND
RFV10N50BE
TO-247
V10N50BE
NOTE: When ordering use the entire part number.
Terminal Diagram
G1
G2
SK
Formerly developmental type TA9881.
D
S
Absolute Maximum Ratings TC = +25oC
Drain Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDSS
Gate Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Control FET Gate Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Electrostatic Discharge Rating, MIL-STD-883, Category B(2) . . . . . . . . . . . . . . . . . . . . . . . . . . ESD
Drain Current
RMS Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS
Control FET Avalanche Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IAS
Control FET Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS
Power Dissipation
TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Derate Above +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Control FET Power Dissipation
TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Derate Above +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ
500
+14, -0.3
+14, -0.3
2
10
25
Refer to UIS Curve
1.5
50
156
1.25
21
0.17
-55 to +150
UNITS
V
V
V
KV
A
A
A
mJ
W
W/oC
W
W/oC
oC
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1995
1
File Number 3377.1




RFV10N50BE pdf, 반도체, 판매, 대치품
RFV10N50BE
Typical Performance Curves (Continued)
PULSE DURATION = 250µs, VGS = 10V, ID = 10A
3.0
2.5
2.0
1.5
1.0
0.5
0
-50
-25 0 25 50 75 100 125
TJ, JUNCTION TEMPERATURE (oC)
150
FIGURE 7. NORMALIZED rDS(ON) vs JUNCTION TEMPERATURE
VGS = VDS, ID = 250µA
2.0
1.5
1.0
0.5
0
-50
-25 0 25 50 75 100 125
TJ, JUNCTION TEMPERATURE (oC)
150
FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs
TEMPERATURE
ID = 250µA
2.0
1.5
1.0
0.5
0
-50
-25 0 25 50 75 100 125
TJ, JUNCTION TEMPERATURE (oC)
150
FIGURE 9. NORMALIZED DRAIN SOURCE BREAKDOWN
VOLTAGE vs TEMPERATURE
5000
VGS = 0V, FREQUENCY (f) = 1MHz
4000
3000
CISS
2000
1000
COSS
CRSS
0
0
5 10 15 20
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
25
FIGURE 10. TYPICAL CAPACITANCE vs VOLTAGE
500 10 10
400 VDD = BVDSS
300
VDD = BVDSS
8
6
200 0.75 BVDSS 0.75 BVDSS
0.50 BVDSS 0.50 BVDSS
0.25 BVDSS 0.25 BVDSS
100 RL = 50
IG(REF) = 3.25mA
VGS = 10V
0
IG(REF)
20
IG(ACT)
t, TIME (µs)
IG(REF)
80
IG(ACT)
4
2
0
1
0.1
10-2
10-3
10-5
PD
t1
t2
DUTY CYCLE, D = t1/t2
TJ = PD x ZθJC + TC
10-4
10-3
10-2
0.1
1
t, RECTANGULAR PULSE WIDTH (s)
10
FIGURE 11. TYPICAL SWITCHING WAVEFORMS FOR CON-
STANT GATE CURRENT. REFER TO APPLICATION
NOTES AN7254 AND AN7260
FIGURE 12. MAXIMUM NORMALIZED TRANSIENT THERMAL
IMPEDANCE
4

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부품번호상세설명 및 기능제조사
RFV10N50BE

10A/ 500V/ Fast Switching N-Channel Enhancement-Mode Power MOSFETs

Intersil Corporation
Intersil Corporation

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