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부품번호 | RFW2N06RLE 기능 |
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기능 | 2A/ 60V/ 0.160 Ohm/ Logic Level/ N-Channel Power MOSFET | ||
제조업체 | Intersil Corporation | ||
로고 | |||
전체 5 페이지수
Data Sheet
RFW2N06RLE
July 1999 File Number 2838.3
2A, 60V, 0.160 Ohm, Logic Level,
N-Channel Power MOSFET
The RFW2N06RLE N-Channel, logic level, ESD protected,
power MOSFET is manufactured using the MegaFET
process. This process, which uses feature sizes
approaching those of LSI integrated circuits, gives optimum
utilization of silicon, resulting in outstanding performance.
The RFW2N06RLE was designed for use with logic level
(5V) driving sources in applications such as programmable
controllers, automotive switching, switching regulators,
switching converters, motor and relay drivers and emitter
switches for bipolar transistors. This performance is
accomplished through a special gate oxide design which
provides full rated conductance at gate biases in the 3V to
5V range, thereby facilitating true on-off power control
directly from logic circuit supply voltages.
Formerly developmental type TA9861.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFW2N06RLE
HEXDIP
RFW2N06RLE
NOTE: When ordering, use the entire part number.
Features
• 2A, 60V
• rDS(on) = 0.160Ω
• UIS Rating Curve (Single Pulse)
• Design Optimized For 5 Volt Gate Drive
• Can be Driven Directly from CMOS, NMOS, TTL
Circuits
• Compatible with Automotive Drive Requirements
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Electrostatic Discharge Protected
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
Packaging
G
S
4 PIN HEXDIP
GATE
DRAIN
SOURCE
6-283
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
RFW2N06RLE
Typical Performance Curves Unless Otherwise Specified (Continued)
1.50
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
ID = 2A
1.25
1.00
2.5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
2.0 VGS = 5V, ID = 2A
1.5
1.0
0.75
0.5
0.50
4.0
4.5 5.0 5.5 6.0 6.5
VGS, GATE TO SOURCE VOLTAGE (V)
7.0
FIGURE 7. NORMALIZED DRAIN TO SOURCE ON VOLTAGE
vs GATE VOLTAGE
0
-50
0 50 100
TJ, JUNCTION TEMPERATURE (oC)
150
FIGURE 8. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
1.50
VGS = VDS, ID = 250µA
1.25
1.00
0.75
0.50
0.25
-50
0 50 100
TJ, JUNCTION TEMPERATURE (oC)
150
FIGURE 9. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
1500
1200
900
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGS
600 CISS
300
0
0
COSS
CRSS
5
10 15
20
VDS, DRAIN TO SOURCE VOLTAGE (V)
25
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
1.50
ID = 250µA
1.25
1.00
0.75
0.50
-50
0 50 100
TJ, JUNCTION TEMPERATURE (oC)
150
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
60 10
RL = 30Ω
IG(REF) = 0.5mA
VGS = 5V
45
0.75 BVDSS
0.50 BVDSS
30 0.25 BVDSS
VDD = BVDSS
GATE
SOURCE
VOLTAGE
15
0.75 BVDSS
0.50 BVDSS
0.25 BVDSS
VDD = BVDSS
DRAIN SOURCE VOLTAGE
0
20
IG(REF)
IG(ACT)
t, TIME (µs)
80
IG(REF)
IG(ACT)
5
0
NOTE: Refer to Harris Application Notes AN7254 and AN7260.
FIGURE 12. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
6-286
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부품번호 | 상세설명 및 기능 | 제조사 |
RFW2N06RLE | 2A/ 60V/ 0.160 Ohm/ Logic Level/ N-Channel Power MOSFET | Intersil Corporation |
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