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부품번호 | RG4B 기능 |
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기능 | GLASS PASSIVATED FAST SWITCHING RECTIFIER | ||
제조업체 | General Semiconductor | ||
로고 | |||
전체 2 페이지수
RG4A THRU RG4J
GLASS PASSIVATED FAST SWITCHING RECTIFIER
Reverse Voltage - 50 to 600 Volts Forward Current - 3.0 Amperes
Case Style G4
0.180 (4.6)
0.115 (2.9)
DIA.
0.042 (1.07)
0.038 (0.962)
DIA.
1.0 (25.4)
MIN.
0.300 (7.6)
MAX.
1.0 (25.4)
MIN.
FEATURES
♦ High temperature metallurgically bonded
construction
♦ Glass passivated cavity-free junction
♦ Capable of meeting environmental standards of
MIL-S-19500
♦ Fast switching for
fast efficiency
♦ 3.0 Ampere operation
at TA=50°C with no
thermal runaway
♦ Typical IR less than 0.1µA
♦ Hermetically sealed package
♦ High temperature soldering guaranteed:
350°C/10 seconds, 0.375" (9.5mm) lead length,
5 lbs. (2.3kg) tension
Dimensions in inches and (millimeters)
*Brazed-lead assembly is covered by Patent No. 3,930,306
MECHANICAL DATA
Case: Solid glass body
Terminals: Solder plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: 0.037 ounce, 1.04 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS
Maximum repetitive peak reverse voltage
VRRM
Maximum RMS voltage
VRMS
Maximum DC blocking voltage
VDC
Maximum average forward rectified current
0.375” (9.5mm) lead lengths at TA=55°C
I(AV)
Peak forward surge current
8.3ms single half sine-wave superimposed
on rated load (JEDEC Method)
IFSM
Maximum instantaneous forward voltage at 3.0A
VF
Maximum reverse current
at rated DC blocking voltage
IR
Maximum average reverse current
at peak reverse voltage
TA=25°C
TA=100°C
IR(AV)
Maximum reverse recovery time (NOTE 1)
trr
Typical junction capacitance (NOTE 2)
CJ
Typical thermal resistance (NOTE 3)
RΘJA
Operating junction and storage temperature range
TJ, TSTG
RG4A
50
35
50
RG4B
100
70
100
NOTES:
(1) Reverse recovery test conditions: IF=0.5A, IR=1.0A, Irr=0.25A
(2) Measured at 1.0 MHZ and applied reverse voltage of 4.0 Volts
(3) Thermal resistance from junction to ambient at 0.375" (9.5mm) lead length, with both leads to heat sink
RG4D
200
140
200
3.0
100.0
1.3
5.0
2.0
100.0
150
50.0
22.0
-65 to +175
RG4G
400
280
400
RG4J
600
420
600
UNITS
Volts
Volts
Volts
Amps
Amps
Volts
µA
µA
250 ns
pF
°C/W
°C
4/98
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구 성 | 총 2 페이지수 | ||
다운로드 | [ RG4B.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
RG4 | Ultra-Fast-Recovery Rectifier Diodes | Sanken electric |
RG4 | (RG4C - RG4Y) High Efficiency Rectifier | Galaxy Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |