Datasheet.kr   

RG4B 데이터시트 PDF




General Semiconductor에서 제조한 전자 부품 RG4B은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

PDF 형식의 RG4B 자료 제공

부품번호 RG4B 기능
기능 GLASS PASSIVATED FAST SWITCHING RECTIFIER
제조업체 General Semiconductor
로고 General Semiconductor 로고


RG4B 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




전체 2 페이지수

미리보기를 사용할 수 없습니다

RG4B 데이터시트, 핀배열, 회로
RG4A THRU RG4J
GLASS PASSIVATED FAST SWITCHING RECTIFIER
Reverse Voltage - 50 to 600 Volts Forward Current - 3.0 Amperes
Case Style G4
0.180 (4.6)
0.115 (2.9)
DIA.
0.042 (1.07)
0.038 (0.962)
DIA.
1.0 (25.4)
MIN.
0.300 (7.6)
MAX.
1.0 (25.4)
MIN.
FEATURES
High temperature metallurgically bonded
construction
Glass passivated cavity-free junction
Capable of meeting environmental standards of
MIL-S-19500
Fast switching for
fast efficiency
3.0 Ampere operation
at TA=50°C with no
thermal runaway
Typical IR less than 0.1µA
Hermetically sealed package
High temperature soldering guaranteed:
350°C/10 seconds, 0.375" (9.5mm) lead length,
5 lbs. (2.3kg) tension
Dimensions in inches and (millimeters)
*Brazed-lead assembly is covered by Patent No. 3,930,306
MECHANICAL DATA
Case: Solid glass body
Terminals: Solder plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: 0.037 ounce, 1.04 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS
Maximum repetitive peak reverse voltage
VRRM
Maximum RMS voltage
VRMS
Maximum DC blocking voltage
VDC
Maximum average forward rectified current
0.375” (9.5mm) lead lengths at TA=55°C
I(AV)
Peak forward surge current
8.3ms single half sine-wave superimposed
on rated load (JEDEC Method)
IFSM
Maximum instantaneous forward voltage at 3.0A
VF
Maximum reverse current
at rated DC blocking voltage
IR
Maximum average reverse current
at peak reverse voltage
TA=25°C
TA=100°C
IR(AV)
Maximum reverse recovery time (NOTE 1)
trr
Typical junction capacitance (NOTE 2)
CJ
Typical thermal resistance (NOTE 3)
RΘJA
Operating junction and storage temperature range
TJ, TSTG
RG4A
50
35
50
RG4B
100
70
100
NOTES:
(1) Reverse recovery test conditions: IF=0.5A, IR=1.0A, Irr=0.25A
(2) Measured at 1.0 MHZ and applied reverse voltage of 4.0 Volts
(3) Thermal resistance from junction to ambient at 0.375" (9.5mm) lead length, with both leads to heat sink
RG4D
200
140
200
3.0
100.0
1.3
5.0
2.0
100.0
150
50.0
22.0
-65 to +175
RG4G
400
280
400
RG4J
600
420
600
UNITS
Volts
Volts
Volts
Amps
Amps
Volts
µA
µA
250 ns
pF
°C/W
°C
4/98





구       성 총 2 페이지수
다운로드[ RG4B.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
RG4

Ultra-Fast-Recovery Rectifier Diodes

Sanken electric
Sanken electric
RG4

(RG4C - RG4Y) High Efficiency Rectifier

Galaxy Semiconductor
Galaxy Semiconductor

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵