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Datasheet R602 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | R602 | Fast Recovery Rectifier (220Amperes Average 1600 Volts) |  Powerex Power Semiconductors | rectifier |
| 2 | R6020422 | Fast Recovery Rectifier (220Amperes Average 1600 Volts) | Powerex Power Semiconductors | rectifier |
| 3 | R6020425 | Fast Recovery Rectifier (250 Amperes Average 1600 Volts) | Powerex Power Semiconductors | rectifier |
| 4 | R6020435 | Fast Recovery Rectifier (350Amperes Average 1600 Volts) | Powerex Power Semiconductors | rectifier |
| 5 | R6020622 | Fast Recovery Rectifier (220Amperes Average 1600 Volts) | Powerex Power Semiconductors | rectifier |
R60 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | R600 | General Purpose Rectifier (200-300 Amperes Average 1400-2600 Volts) Powerex Power Semiconductors rectifier | | |
| 2 | R6000F | 0.2mA Fast Recovery High Voltage Rectifier 3500 - 6000 Volts MCC
Features
• • • • AVALANCHE OPERATION UL 94V0 FLAME RETARDANT EPOXY MOLDING COMPOND BEVELED ROUND CHIP LOW COST
R3500F THRU R6000F
0.2mA Fast Recovery High Voltage Rectifier 3500 - 6000 Volts
DO-15
Maximum DC Blocking Voltage
D
• •
Maximum Ratings
Operating Temperature -55 °C to +  Micro Commercial Components rectifier | | |
| 3 | R6004CND | 10V Drive Nch MOSFET Data Sheet
10V Drive Nch MOSFET
R6004CND
Structure Silicon N-channel MOSFET
Features 1) Low on-resistance. 2) High-speed switching. 3) Wide SOA. 4) Drive circuits can be simple. 5) Parallel use is easy.
Dimensions (Unit : mm)
CPT3
(SC-63)  ROHM Semiconductor mosfet | | |
| 4 | R6004END | Nch 600V 4A Power MOSFET R6004END
Nch 600V 4A Power MOSFET
Datasheet
VDSS
600V
lOutline
TO-252
RDS(on)(Max.)
0.98Ω
SC-63
ID
±4.0A
CPT3
PD
lFeatures
58W
lInner circuit
1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be � ROHM Semiconductor mosfet | | |
| 5 | R6004ENX | Nch 600V 4A Power MOSFET R6004ENX
Nch 600V 4A Power MOSFET
Data Sheet
VDSS RDS(on) (Max.)
ID PD
lFeatures 1) Low on-resistance.
600V 980mW
4A 40W
lOutline
TO-220FM
lInner circuit
(1) (2) (3)
2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 20V. 4) Drive circuits can be simple. 5) Parallel us ROHM Semiconductor mosfet | | |
| 6 | R6004KND | Nch 600V 4A Power MOSFET R6004KND
Nch 600V 4A Power MOSFET
VDSS RDS(on)(Max.)
ID PD
600V 0.98Ω ±4.0A 58W
lFeatures
1) Low on-resistance. 2) Ultra fast switching speed. 3) Parallel use is easy. 4) Pb-free lead plating ; RoHS compliant.
lOutline
TO-252
SC-63
CPT3
lInner circuit
Datas ROHM Semiconductor mosfet | | |
| 7 | R6004KNJ | Nch 600V 4A Power MOSFET R6004KNJ
Nch 600V 4A Power MOSFET
VDSS RDS(on)(Max.)
ID PD
600V 0.98Ω ±4.0A 58W
lFeatures
1) Low on-resistance. 2) Ultra fast switching speed. 3) Parallel use is easy. 4) Pb-free lead plating ; RoHS compliant
lOutline
TO-263
SC-83
LPT(S)
lInner circuit
Data ROHM Semiconductor mosfet | |
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