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RBV3508 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 RBV3508
기능 SILICON BRIDGE RECTIFIERS
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RBV3508 데이터시트, 핀배열, 회로
RBV3500 - RBV3510
SILICON BRIDGE RECTIFIERS
PRV : 50 - 1000 Volts
Io : 35 Amperes
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* High case dielectric strength of 2000 VDC
* Ideal for printed circuit board
* Very good heat dissipation
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 7.7 grams
RBV25
3.9 ± 0.2
C3 30 ± 0.3
4.9 ± 0.2
3.2 ± 0.1
+ ~~
1.0 ± 0.1
10 7.5 7.5
±0.2 ±0.2 ±0.2
2.0 ± 0.2
0.7 ± 0.1
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
SYMBOL RBV
3500
Maximum Recurrent Peak Reverse Voltage
VRRM
50
Maximum RMS Voltage
VRMS
35
Maximum DC Blocking Voltage
VDC 50
Maximum Average Forward Current Tc = 55°C
IF(AV)
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Current Squared Time at t < 8.3 ms.
IFSM
I2t
Maximum Forward Voltage per Diode at IF = 17.5 Amps. VF
Maximum DC Reverse Current
Ta = 25 °C
IR
at Rated DC Blocking Voltage
Ta = 100 °C
IR(H)
Typical Thermal Resistance (Note 1)
RθJC
Operating Junction Temperature Range
TJ
Storage Temperature Range
TSTG
RBV
3501
100
70
100
RBV
3502
200
140
200
RBV
3504
400
280
400
35
RBV
3506
600
420
600
400
660
1.1
10
200
1.5
10
- 40 to + 150
RBV
3508
800
560
800
RBV
3510
UNIT
1000 Volts
700 Volts
1000 Volts
Amps.
Amps.
A2S
Volts
µA
µA
°C/W
°C
°C
Notes :
1. Thermal Resistance from junction to case with units mounted on heatsink.
UPDATE : AUGUST 3, 1998






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