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PDF PBSS4140T Data sheet ( Hoja de datos )
| Número de pieza | PBSS4140T | |
| Descripción | NPN low transistor | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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DISCRETE SEMICONDUCTORS
DATA SHEET
PBSS4140T
40 V, 1A
NPN low VCEsat (BISS) transistor
Product data sheet
Supersedes data of 2005 Feb 14
2005 Feb 24
1 page  
NXP Semiconductors
40 V, 1A
NPN low VCEsat (BISS) transistor
1000
handbook, halfpage
hFE
800
600
400
200
MLD660
(1)
(2)
(3)
010−1
1
VCE = 5 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
10 102 103 104
IC (mA)
Fig.2 DC current gain as a function of collector
current; typical values.
Product data sheet
PBSS4140T
10
handbook, halfpage
VBE
(V)
1
MLD661
(1)
(2)
(3)
10−1
10−1
1
VCE = 5 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
10 102 103 104
IC (mA)
Fig.3 Base-emitter voltage as a function of
collector current; typical values.
103
handbook, halfpage
VCEsat
(mV)
102
(2)
10
(1)
(3)
MLD662
1
1 10
IC/IB = 10.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
102 103 104
IC (mA)
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
102
RCEsat
(Ω)
10
mld663
(1) (2)
1
(3)
10−1
10−1
1
IC/IB = 10.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
10 102 103 104
IC (mA)
Fig.5 Equivalent on-resistance as a function of
collector current; typical values.
2005 Feb 24
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet PBSS4140T.PDF ] | |
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