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부품번호 | QS6M4 기능 |
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기능 | Small switching | ||
제조업체 | ROHM Semiconductor | ||
로고 | |||
전체 6 페이지수
Transistors
Small switching
QS6M4
QS6M4
zFeatures
1) The QS6M4 combines Pch Trench MOSFET with a
Nch Trench MOSFET in a single TSMT6 package.
2) Pch Trench MOSFET and Nch Trench MOSFET
have a low on-state resistance with a fast switching.
3) Pch Trench MOSFET is neucted a low voltage drive
(2.5V).
zApplications
Load switch, inverter
zExternal dimensions (Unit : mm)
TSMT6
1pin mark
2.8
1.6
Each lead has same dimensions
Abbreviated symbol : M04
zStructure
Silicon P-channel MOS FET
Silicon N-channel MOS FET
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
QS6M4
Taping
TR
3000
zEquivalent circuit
(6) (5) (4)
∗1
∗2 ∗2
∗1
(1) (2) (3)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(1) Tr1 (Nch) Source
(2) Tr1 (Nch) Gate
(3) Tr2 (Pch) Drain
(4) Tr2 (Pch) Source
(5) Tr2 (Pch) Gate
(6) Tr1 (Nch) Drain
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body diode)
Continuous
Pulsed
Total power dissipation
Channel temperature
Storage temperature
∗ Pw≤10µs, Duty cycle≤1%
Symbol
VDSS
VGSS
ID
IDP
IS
ISP
PD
Tch
Tstg
Limits
Nchannel Pchannel
30 −20
12 −12
±1.5
±1.5
±6.0
±6.0
0.8 −0.75
6.0 −6.0
1.25
150
−55 to +150
Unit
V
V
A
A∗
A
A∗
W
°C
°C
zThermal resistance (Ta=25°C)
Parameter
Channel to ambient
Symbol
Rth (ch-a)
Limits
100
Unit
°C / W
1/5
Transistors
N-ch
zElectrical characteristic curves
1000
Ta=25°C
f=1MHz
VGS=0V
Ciss
100
Crss
Coss
10
1
0.01 0.1
1
10 100
DRAIN-SOURCE VOLTAGE : VDS (A)
Fig.1 Typical Capacitance
vs. Drain-Source Voltage
1000
tf
100
Ta=25°C
VDD=15V
VGS=4.5V
RG=10Ω
Pulsed
td (off)
10 td (on)
tr
1
0.01 0.1 1 10
DRAIN CURRENT : ID (A)
Fig.2 Switching Characteristics
QS6M4
6
Ta=25°C
VDD=15V
5 ID=1.5A
RG=10Ω
Pulsed
4
3
2
1
0
0 0.5 1.0 1.5 2.0
TOTAL GATE CHARGE : Qg (nC)
Fig.3 Dynamic Input Characteristics
10
1 Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
0.1
VDS=10V
Pulsed
0.01
0.001
0.0 0.5 1.0 1.5 2.0 2.5
GATE-SOURCE VOLTAGE : VGS (V)
Fig.4 Typical Transfer Characteristics
1.0
Ta=25°C
0.9 Pulsed
0.8
ID=1.5A
0.7
ID=0.75A
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0 1 2 3 4 5 6 7 8 9 10
GATE-SOURCE VOLTAGE : VGS (V)
Fig.5 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
10
Ta=125°C
Ta=75°C
1
Ta=25°C
Ta= −25°C
0.1
VGS=0V
Pulsed
0.01
0.0 0.5 1.0 1.5
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.6 Source Current vs.
Source-Drain Voltage
10
Ta=125°C
1
Ta=75°C
Ta=25°C
Ta= −25°C
VGS=4.5V
Pulsed
10
Ta=125°C
1 Ta=75°C
Ta=25°C
Ta= −25°C
VGS=4.0V
Pulsed
10
Ta=125°C
1 Ta=75°C
Ta=25°C
Ta= −25°C
VGS=2.5V
Pulsed
0.1
0.01
0.1 1
DRAIN CURRENT : ID (A)
10
Fig.7 Static Drain-Source
On-State Resistance
vs. Drain Current (Ι)
0.1
0.01
0.1 1
DRAIN CURRENT : ID (A)
10
Fig.8 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙ)
0.1
0.01
0.1 1
DRAIN CURRENT : ID (A)
10
Fig.9 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙΙ)
4/5
4페이지 | |||
구 성 | 총 6 페이지수 | ||
다운로드 | [ QS6M4.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
QS6M3 | Small switching | ROHM Semiconductor |
QS6M4 | Small switching | ROHM Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |