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QT113-IS 데이터시트 PDF




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부품번호 QT113-IS 기능
기능 CHARGE-TRANSFER TOUCH SENSOR
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QT113-IS 데이터시트, 핀배열, 회로
QProxQT113 / QT113H
CHARGE-TRANSFER TOUCH SENSOR
! Projects a proximity field through air
! Less expensive than many mechanical switches
! Sensitivity easily adjusted via capacitor value
! Turns small objects into intrinsic touch sensors
! 100% autocal for life - no adjustments required
! 2.5 to 5V, 600µA single supply operation
! Toggle mode for on/off control (strap option)
! 10s, 60s, infinite auto-recal timeout (strap options)
! Gain settings in 2 discrete levels
! HeartBeat™ health indicator on output
! Active-low (QT113) or active-high outputs (QT113H)
! Only one external part required - a 1¢ capacitor
Vdd
O ut
O pt1
O pt2
1
2
3
4
8 Vss
7 Sn s2
6 Sn s1
5 Gain
APPLICATIONS -
! Light switches
! Prox sensors
! Appliance control
! Security systems
! Access systems
! Pointing devices
! Elevator buttons
! Toys & games
The QT113 charge-transfer (“QT’”) touch sensor is a self-contained digital IC capable of detecting near-proximity or touch. It will
project a proximity sense field through air, via almost any dielectric, like glass, plastic, stone, ceramic, and most kinds of wood. It can
also turn small metal-bearing objects into intrinsic sensors, making them responsive to proximity or touch. This capability coupled with
its ability to self calibrate continuously can lead to entirely new product concepts.
It is designed specifically for human interfaces, like control panels, appliances, toys, lighting controls, or anywhere a mechanical
switch or button may be found; it may also be used for some material sensing and control applications provided that the presence
duration of objects does not exceed the recalibration timeout interval.
The QT113 requires only a common inexpensive capacitor in order to function.
Power consumption is only 600µA in most applications. In most cases the power supply need only be minimally regulated, for example
by Zener diodes or an inexpensive 3-terminal regulator.
The QT113’s RISC core employs signal processing techniques pioneered by Quantum; these are specifically designed to make the
device survive real-world challenges, such as ‘stuck sensor’ conditions and signal drift. Even sensitivity is digitally determined and
remains constant in the face of large variations in sample capacitor CS and electrode CX. No external switches, opamps, or other
analog components aside from CS are usually required.
The option-selectable toggle mode permits on/off touch control, for example for light switch replacement. The Quantum-pioneered
HeartBeat™ signal is also included, allowing a host microcontroller to monitor the health of the QT113 continuously if desired. By
using the charge transfer principle, the IC delivers a level of performance clearly superior to older technologies in a highly
cost-effective package.
TA
00C to +700C
00C to +700C
-400C to +850C
-400C to +850C
Quantum Research Group Ltd
AVAILABLE OPTIONS
SOIC
QT113-S
QT113H-S
QT113-IS
QT113H-IS
8-PIN DIP
QT113-D
QT113H-D
-
-
Copyright Quantum Research Group Ltd
R1.10/0104




QT113-IS pdf, 반도체, 판매, 대치품
Figure 1-5 Shielding Against Fringe Fields
Drift compensation (Figure 2-1) is performed by making the
reference level track the raw signal at a slow rate, but only
while there is no detection in effect. The rate of adjustment
must be performed slowly, otherwise legitimate detections
could be ignored. The QT113 drift compensates using a
slew-rate limited change to the reference level; the threshold
and hysteresis values are slaved to this reference.
Once an object is sensed, the drift compensation mechanism
ceases since the signal is legitimately high, and therefore
should not cause the reference level to change.
The QT113's drift compensation is 'asymmetric': the
Sense
wire
Sense
w ire
reference level drift-compensates in one direction faster than
it does in the other. Specifically, it compensates faster for
decreasing signals than for increasing signals. Increasing
signals should not be compensated for quickly, since an
approaching finger could be compensated for partially or
entirely before even approaching the sense electrode.
However, an obstruction over the sense pad, for which the
sensor has already made full allowance for, could suddenly
U nshielded
S hielded
be removed leaving the sensor with an artificially elevated
reference level and thus become insensitive to touch. In this
latter case, the sensor will compensate for the object's
removal very quickly, usually in only a few seconds.
Electrode
E lec trode
With large values of Cs and small values of Cx, drift
compensation will appear to operate more slowly than with
4-1 to 4-3). The value of Cs also has a dramatic effect on
sensitivity, and this can be increased in value (up to a limit).
Also, increasing the electrode's surface area will not Table 1-1 Gain Setting Strap Options
substantially increase touch sensitivity if its diameter is
already much larger in surface area than the object being
detected. The panel or other intervening material can be
Gain
High - 6 counts
Tie Pin 5 to:
Vdd
made thinner, but again there are diminishing rewards for
Low - 12 counts
Vss (Gnd)
doing so. Panel material can also be changed to one having
a higher dielectric constant, which will help propagate the the converse. Note that the positive and negative drift
field through to the front. Locally adding some conductive compensation rates are different.
material to the panel (conductive materials essentially have
an infinite dielectric constant) will also help; for example,
adding carbon or metal fibers to a plastic panel will greatly
increase frontal field strength, even if the fiber density is too
low to make the plastic bulk-conductive.
1.3.5.2 Decreasing Sensitivity
In some cases the QT113 may be too sensitive, even on low
gain. In this case gain can be lowered further by a number of
strategies: making the electrode smaller, making the
electrode into a sparse mesh using a high
space-to-conductor ratio (Figure 1-3), or by decreasing Cs.
2.1.2 THRESHOLD CALCULATION
Unlike the QT110 device, the internal threshold level is fixed
at one of two setting as determined by Table 1-1. These
setting are fixed with respect to the internal reference level,
which in turn can move in accordance with the drift
compensation mechanism..
The QT113 employs a hysteresis dropout below the
threshold level of 17% of the delta between the reference and
threshold levels.
2.1.3 MAX ON-DURATION
If an object or material obstructs the sense pad the signal
2 - QT113 SPECIFICS
may rise enough to create a detection, preventing further
2.1 SIGNAL PROCESSING
The QT113 processes all signals using 16 bit
math, using a number of algorithms pioneered by
Quantum. The algorithms are specifically
designed to provide for high 'survivability' in the
face of numerous adverse environmental
changes.
2.1.1 DRIFT COMPENSATION ALGORITHM
Signal drift can occur because of changes in Cx
and Cs over time. It is crucial that drift be
compensated for, otherwise false detections,
non-detections, and sensitivity shifts will follow.
T hr es ho ld
Output
Figure 2-1 Drift Compensation
S ign a l
H ysteresis
R e fe re nce
-4-

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QT113-IS 전자부품, 판매, 대치품
Figure 3-1 ESD Suppression Circuit
Because the charge and transfer times of the QT113
are relatively long, the circuit can tolerate very large
+ 2 .5 to 5
values of Re, even to 100k ohms in most cases where
electrode Cx is small. The added diodes shown
+ C1
(1N4150 or equivalent low-C diodes, or a single BAV99
Re3
1
2 Vdd 7
OUT
SNS2
R e2
R e1
10µF
D1
S E NS IN G
ELEC TRO DE
dual-diode) will shunt the ESD transients away from the
part, and Re1 will current limit the rest into the QT113's
own internal clamp diodes. C1 should be around 10µF
if it is to absorb positive transients from a human body
model standpoint without rising in value by more than 1
3
O PT1
5
G AIN
D2
Cs
volt. If desired C1 can be replaced with an appropriate
Zener diode. Directly placing semiconductor transient
protection devices, Zeners, or MOV's on the sense lead
4
O PT2
6
SNS1
Vss
is not advised; these devices have extremely large
amounts of unstable parasitic C which will swamp the
QT113 and render it useless.
8
Re1 should be as large as possible given the load
value of Cx and the diode capacitances of D1 and D2,
digital spikes, sags, and surges which can adversely affect but Re1 should be low enough to permit at least 6
the QT113. The QT113 will track slow changes in Vdd, but it timeconstants of RC to occur during the charge and transfer
can be affected by rapid voltage steps.
phases.
if desired, the supply can be regulated using a conventional Re2 functions to isolate the transient from the QT113's Vdd
low current regulator, for example CMOS regulators that have pin; values of around 1K ohms are reasonable.
low quiescent currents.
As with all ESD protection networks, it is crucial that the
3.5 ESD PROTECTION
transients be led away from the circuit. PCB ground layout is
crucial; the ground connections to D1, D2, and C1 should all
In cases where the electrode is placed behind a dielectric go back to the power supply ground or preferably, if
panel, the QT113 will usually be adequately protected from available, a chassis ground connected to earth. The currents
direct static discharge. However, even with a plastic or glass should not be allowed to traverse the area directly under the
panel, transients can still flow into the electrode via induction, QT113.
or in extreme cases, via dielectric breakdown. Porous
materials may allow a spark to tunnel right through the If the QT113 is connected to an external circuit via a cable or
material; partially conducting materials like 'pink poly' will long twisted pair, it is possible for ground-bounce to cause
conduct the ESD right to the electrode. Testing is required to damage to the Out pin; even though the transients are led
reveal any problems. The QT113 does have diode protection away from the QT113 itself, the connected signal or power
on its terminals which can absorb and protect the device from ground line will act as an inductor, causing a high differential
most induced discharges, up to 20mA; the usefulness of the voltage to build up on the Out wire with respect to ground. If
internal clamping will depending on the dielectric properties, this is a possibility, the Out pin should have a resistance Re3
panel thickness, and rise time of the ESD transients.
in series with it to limit current; this resistor should be as
large as can be tolerated by the load.
ESD dissipation can be aided further with an added diode
protection network as shown in Figure 3-1, in extreme cases.
-7-

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CHARGE-TRANSFER TOUCH SENSOR

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