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부품번호 | PBYR3040PTF 기능 |
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기능 | Rectifier diodes schottky barrier | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
Philips Semiconductors
Rectifier diodes
schottky barrier
Product specification
PBYR3045PTF series
GENERAL DESCRIPTION
Dual, low leakage, platinum barrier,
schottky barrier rectifier diodes in a
full pack, plastic envelope featuring
low forward voltage drop and
absence of stored charge. These
devices can withstand reverse
voltage transients and have
guaranteed reverse surge capability.
The devices are intended for use in
switched mode power supplies and
high frequency circuits in general
where low conduction and zero
switching losses are important.
QUICK REFERENCE DATA
SYMBOL PARAMETER
MAX. MAX. MAX. UNIT
VRRM
VF
IO(AV)
PBYR30-
Repetitive peak reverse
voltage
Forward voltage
Output current (both
diodes conducting)
35PTF 40PTF
35 40
0.65 0.65
20 20
45PTF
45
0.65
20
V
V
A
PINNING - SOT199
PIN DESCRIPTION
1 anode 1 (a)
2 cathode (k)
3 anode 2 (a)
PIN CONFIGURATION
case
1 23
SYMBOL
a1 a2
13
k2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
VRRM
VRWM
VR
IO(AV)
IO(RMS)
IFRM
IFSM
I2t
IRRM
IRSM
Tstg
Tj
Repetitive peak reverse voltage
Crest working reverse voltage
Continuous reverse voltage
Ths ≤ 113 ˚C
Output current (both diodes
conducting)
RMS forward current
Repetitive peak forward current
per diode
Non-repetitive peak forward
current per diode.
I2t for fusing
Repetitive peak reverse current
per diode.
Non-repetitive peak reverse
current per diode.
Storage temperature
Operating junction temperature
square wave; δ = 0.5;
Ths ≤ 109 ˚C
t = 25 µs; δ = 0.5;
Ths ≤ 109 ˚C
t = 10 ms
t = 8.3 ms
sinusoidal; Tj = 125 ˚C prior
to surge; with reapplied
VRWM(max)
t = 10 ms
tp = 2 µs; δ = 0.001
tp = 100 µs
-
-
-
-
-
-
-
-
-
-
-
-65
-
MAX.
-35 -40 -45
35 40 45
35 40 45
35 40 45
20
20
30
135
150
91
2
2
175
150
UNIT
V
V
V
A
A
A
A
A
A2s
A
A
˚C
˚C
August 1996
1
Rev 1.100
Philips Semiconductors
Rectifier diodes
schottky barrier
MECHANICAL DATA
Dimensions in mm
Net Mass: 5.5 g
0.7
21.5
max
15.3 max
3.1
7.3 3.3
Product specification
PBYR3045PTF series
5.2 max
3.2
o
6.2 45
5.8
seating
plane
3.5
15.7
min
1
2.1 max
23
1.2
1.0
5.45 5.45
3.5 max
not tinned
0.4 M
0.7 max
2.0
Fig.7. SOT199; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
August 1996
4
Rev 1.100
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부품번호 | 상세설명 및 기능 | 제조사 |
PBYR3040PT | Rectifier diodes schottky barrier | NXP Semiconductors |
PBYR3040PTF | Rectifier diodes schottky barrier | NXP Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |