PBYR3040PTF Datasheet PDF - NXP Semiconductors
| Part Number | PBYR3040PTF | |
| Description | Rectifier diodes schottky barrier | |
| Manufacturers | NXP Semiconductors | |
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Philips Semiconductors
Rectifier diodes
schottky barrier
Product specification
PBYR3045PTF series
GENERAL DESCRIPTION
Dual, low leakage, platinum barrier,
schottky barrier rectifier diodes in a
full pack, plastic envelope featuring
low forward voltage drop and
absence of stored charge. These
devices can withstand reverse
voltage transients and have
guaranteed reverse surge capability.
The devices are intended for use in
switched mode power supplies and
high frequency circuits in general
where low conduction and zero
switching losses are important.
QUICK REFERENCE DATA
SYMBOL PARAMETER
MAX. MAX. MAX. UNIT
VRRM
VF
IO(AV)
PBYR30-
Repetitive peak reverse
voltage
Forward voltage
Output current (both
diodes conducting)
35PTF 40PTF
35 40
0.65 0.65
20 20
45PTF
45
0.65
20
V
V
A
PINNING - SOT199
PIN DESCRIPTION
1 anode 1 (a)
2 cathode (k)
3 anode 2 (a)
PIN CONFIGURATION
case
1 23
SYMBOL
a1 a2
13
k2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
VRRM
VRWM
VR
IO(AV)
IO(RMS)
IFRM
IFSM
I2t
IRRM
IRSM
Tstg
Tj
Repetitive peak reverse voltage
Crest working reverse voltage
Continuous reverse voltage
Ths ≤ 113 ˚C
Output current (both diodes
conducting)
RMS forward current
Repetitive peak forward current
per diode
Non-repetitive peak forward
current per diode.
I2t for fusing
Repetitive peak reverse current
per diode.
Non-repetitive peak reverse
current per diode.
Storage temperature
Operating junction temperature
square wave; δ = 0.5;
Ths ≤ 109 ˚C
t = 25 µs; δ = 0.5;
Ths ≤ 109 ˚C
t = 10 ms
t = 8.3 ms
sinusoidal; Tj = 125 ˚C prior
to surge; with reapplied
VRWM(max)
t = 10 ms
tp = 2 µs; δ = 0.001
tp = 100 µs
-
-
-
-
-
-
-
-
-
-
-
-65
-
MAX.
-35 -40 -45
35 40 45
35 40 45
35 40 45
20
20
30
135
150
91
2
2
175
150
UNIT
V
V
V
A
A
A
A
A
A2s
A
A
˚C
˚C
August 1996
1
Rev 1.100
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Philips Semiconductors
Rectifier diodes
schottky barrier
Product specification
PBYR3045PTF series
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
© Philips Electronics N.V. 1996
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
August 1996
5
Rev 1.100
Preview 5 Page |
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