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부품번호 | PBYR640CTD 기능 |
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기능 | Rectifier diodes Schottky barrier | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
Philips Semiconductors
Rectifier diodes
Schottky barrier
Product specification
PBYR645CTD series
FEATURES
• Low forward volt drop
• Fast switching
• Reverse surge capability
• High thermal cycling performance
• Low thermal resistance
SYMBOL
a1
1
k2
a2
3
QUICK REFERENCE DATA
VR = 40 V/ 45 V
IO(AV) = 6 A
VF ≤ 0.6 V
GENERAL DESCRIPTION
Dual schottky rectifier diodes
intended for use as output rectifiers
in low voltage, high frequency
switched mode power supplies.
The PBYR645CTD series is
supplied in the SOT428 surface
mounting package.
PINNING
PIN DESCRIPTION
1 anode 1
2 cathode1
3 anode 2
tab cathode
SOT428
tab
2
13
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
VRRM
VRWM
VR
IO(AV)
IFRM
IFSM
IRRM
Tj
Tstg
Peak repetitive reverse volt-
age
Working peak reverse volt-
age
Continuous reverse voltage
Tmb ≤ 113 ˚C
PBYR6
Average rectified output cur- square wave; δ = 0.5;
rent (both diodes conducting) Tmb ≤ 134 ˚C
Repetitive peak forward cur- square wave; δ = 0.5;
rent per diode
Tmb ≤ 134 ˚C
Non-repetitive peak forward t = 10 ms
current per diode
t = 8.3 ms
Peak repetitive reverse
sinusoidal; Tj = 125 ˚C prior to
surge; with reapplied VRRM(max)
pulse width and repetition rate
surge current per diode
limited by Tj max
Operating junction tempera-
ture
Storage temperature
-
-
-
-
-
-
-
-
-
- 65
MAX.
40CTD
40
45CTD
45
40 45
40
6
45
6
65
70
UNIT
V
V
V
A
A
A
A
1A
150 ˚C
175 ˚C
1 it is not possible to make connection to pin 2 of the SOT428 package
September 1998
1
Rev 1.100
Philips Semiconductors
Rectifier diodes
Schottky barrier
Product specification
PBYR645CTD series
MECHANICAL DATA
Dimensions in mm : Net Mass: 1.4 g
6.73 max
tab
1.1
seating plane
2.38 max
0.93 max
5.4
6.22 max
10.4 max
4 min
4.6
1
2.285 (x2)
2
3
0.5 min
0.8 max
(x2)
0.5
0.3
0.5
Fig.7. SOT428 : centre pin connected to mounting base.
MOUNTING INSTRUCTIONS
Dimensions in mm
7.0
7.0
2.15 1.5
2.5
4.57
Fig.8. SOT428 : soldering pattern for surface mounting.
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent dam-
age to MOS gate oxide.
2. Epoxy meets UL94 V0 at 1/8".
September 1998
4
Rev 1.100
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다운로드 | [ PBYR640CTD.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
PBYR640CT | Rectifier diodes Schottky barrier | NXP Semiconductors |
PBYR640CTD | Rectifier diodes Schottky barrier | NXP Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |