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PDF PUMB11 Data sheet ( Hoja de datos )
| Número de pieza | PUMB11 | |
| Descripción | PNP resistor-equipped double transistor | |
| Fabricantes | NXP Semiconductors | |
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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
MBD128
PUMB11
PNP resistor-equipped double
transistor
Product specification
2000 Aug 08
1 page  
Philips Semiconductors
PNP resistor-equipped double transistor
Product specification
PUMB11
103
handbook, halfpage
hFE
102
10
MLD412
(2) (1)
(3)
−1
handbook, halfpage
VCEsat
(V)
−10−1
MLD411
(1)
(3) (2)
1
−10−1
−1
−10 IC (mA) −102
VCE = −5 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −40 °C.
Fig.3 DC current gain as a function of collector
current; typical values.
−10−2
−1
−10 −102
IC (mA)
IC/IB = 20.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −40 °C.
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
−10
handbook, halfpage
Vi(off)
(V)
−1
(1)
(2)
(3)
MLD414
−102
handbook, halfpage
Vi(on)
(V)
−10
(2) (1)
−1 (3)
MLD413
−10−1
−10−2
−10−1
−1 −10
IC (mA)
VCE = −5 V.
(1) Tamb = −40 °C.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
Fig.5 Input-off voltage as a function of collector
current; typical values.
−10−1
−10−1
−1
−10 IC (mA) −102
VCE = −0.3 V.
(1) Tamb = −40 °C.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
Fig.6 Input-on voltage as a function of collector
current; typical values.
2000 Aug 08
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet PUMB11.PDF ] | |
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