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PDF PUMD6 Data sheet ( Hoja de datos )
| Número de pieza | PUMD6 | |
| Descripción | NPN/PNP resistor-equipped transistor | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de PUMD6 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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DISCRETE SEMICONDUCTORS
DATA SHEET
ndbook, halfpage
MBD128
PUMD6
NPN/PNP resistor-equipped
transistor
Product specification
Supersedes data of 1997 Dec 15
1999 May 28
1 page  
Philips Semiconductors
NPN/PNP resistor-equipped transistor
103
handbook, halfpage
hFE
(1)
(2)
(3)
MGS329
103
VCEsat
(V)
102
Product specification
PUMD6
MGS330
(1) (2) (3)
102
10−1
1
TR1 (NPN); VCE = 5 V.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −40 °C.
10 102
IC (mA)
Fig.3 DC current gain as a function of collector
current; typical values.
10
10−1
1
TR1 (NPN); IC/IB = 20.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −40 °C.
10 IC (mA) 102
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
103
handbook, halfpage
hFE
102
(1)
(2)
(3)
MGS331
103
VCEsat
(V)
102
(1) (2) (3)
MGS330
10
10−1
1
TR2 (PNP); VCE = −5 V.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −40 °C.
10 IC (mA) 102
Fig.5 DC current gain as a function of collector
current; typical values.
10
10−1
1
TR2 (PNP); IC/IB = 20.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −40 °C.
10 IC (mA) 102
Fig.6 Collector-emitter saturation voltage as a
function of collector current; typical values.
1999 May 28
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet PUMD6.PDF ] | |
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