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PDF PUMD9 Data sheet ( Hoja de datos )
| Número de pieza | PUMD9 | |
| Descripción | NPN/PNP resistor-equipped transistors | |
| Fabricantes | NXP Semiconductors | |
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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
MBD128
PUMD9
NPN/PNP resistor-equipped
transistors
Product specification
Supersedes data of 1999 Jan 07
1999 May 20
1 page  
Philips Semiconductors
NPN/PNP resistor-equipped transistors
Product specification
PUMD9
103
handbook, halfpage
hFE
102
10
MGR757
(1)
(2)
(3)
103
handbook, halfpage
VCEsat
(mV)
102
(1)
(2)
(3)
MGR756
1
10−1
1
10 IC (mA) 102
TR1 (NPN); VCE = 5 V.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −40 °C.
Fig.3 DC current gain as a function of collector
current; typical values.
10
10−1
1
10 IC (mA) 102
TR1 (NPN); IC/IB = 20.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −40 °C.
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
2
handbook, halfpage
Vi(off)
(V)
1.6
MGR759
1.2
(1)
(2)
0.8
(3)
0.4
0
10−2
10−1
1 IC (mA) 10
TR1 (NPN); VCE = 5 V.
(1) Tamb = −40 °C.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
Fig.5 Input-off voltage as a function of collector
current; typical values.
102
handbook, halfpage
Vi(on)
(V)
10
MGR758
1 (1)
(2)
(3)
10−1
10−1
1
10 IC (mA) 102
TR1 (NPN); VCE = 0.3 V.
(1) Tamb = −40 °C.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
Fig.6 Input-on voltage as a function of collector
current; typical values.
1999 May 20
5
5 Page 
Philips Semiconductors
NPN/PNP resistor-equipped transistors
NOTES
Product specification
PUMD9
1999 May 20
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet PUMD9.PDF ] | |
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