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부품번호 | PUMH1 기능 |
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기능 | NPN resistor-equipped double transistor | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 8 페이지수
DISCRETE SEMICONDUCTORS
DATA SHEET
ndbook, halfpage
MBD128
PUMH1
NPN resistor-equipped double
transistor
Product specification
Supersedes data of 1998 Aug 06
1999 May 20
Philips Semiconductors
NPN resistor-equipped double transistor
Product specification
PUMH1
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Per transistor
ICBO
ICEO
IEBO
hFE
VCEsat
Vi(off)
Vi(on)
R1
collector cut-off current
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation voltage
input-off voltage
input-on voltage
input resistor
IE = 0; VCB = 50 V
IB = 0; VCE = 30 V
IB = 0; VCE = 30 V; Tj = 150 °C
IC = 0; VEB = 5 V
IC = 5 mA; VCE = 5 V
IC = 10 mA; IB = 0.5 mA
IC = 100 µA; VCE = 5 V
IC = 5 mA; VCE = 200 mV
RR-----21-- resistor ratio
Cc collector capacitance
IE = ie = 0; VCB = 10 V; f = 1 MHz
−
−
−
−
60
−
−
2.5
15.4
0.8
−
−
−
−
−
−
−
1.1
1.7
22
1
−
100 nA
1 µA
50 µA
180 µA
−
150 mV
0.8 V
−V
28.6 kΩ
1.2
2.5 pF
103
handbook, halfpage
hFE
102
10
MGM916
(1)
(2)
(3)
1
handbook, halfpage
VCEsat
(V)
10−1
MGM915
(1)
(2)
(3)
1
10−1
1
10 102
IC (mA)
VCE = 5 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −40 °C.
Fig.3 DC current gain as a function of collector
current; typical values.
10−210−1
1
10 102
IC (mA)
IC/IB = 20.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −40 °C.
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
1999 May 20
4
4페이지 Philips Semiconductors
NPN resistor-equipped double transistor
Product specification
PUMH1
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 May 20
7
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부품번호 | 상세설명 및 기능 | 제조사 |
PUMH1 | NPN resistor-equipped double transistor | NXP Semiconductors |
PUMH11 | NPN resistor-equipped double transistor | NXP Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |