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PDF PUMH9 Data sheet ( Hoja de datos )
| Número de pieza | PUMH9 | |
| Descripción | NPN resistor-equipped double transistor | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de PUMH9 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
MBD128
PUMH9
NPN resistor-equipped double
transistor
Product specification
1999 May 06
1 page  
Philips Semiconductors
NPN resistor-equipped double transistor
Product specification
PUMH9
103
handbook, halfpage
hFE
102
(3) (2) (1)
10
MGS325
103
handbook, halfpage
VCEsat
(V)
102
(1) (2) (3)
MGS324
1
10−1
1
10 102
IC (mA)
VCE = 5 V.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −40 °C.
Fig.3 DC current gain as a function of collector
current; typical values.
10
10−1
1
10 IC (mA) 102
IC/IB = 20.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −40 °C.
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
2
handVboi(ookf,f)halfpage
(V)
1.6
MGS327
1.2
(1)
0.8
(2)
(3)
0.4
0
10−2
10−1
1 10
IC (mA)
VCE = 5 V.
(1) Tamb = −40 °C.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
Fig.5 Input-off voltage as a function of collector
current; typical values.
102
handbook, halfpage
Vi(on)
(V)
10
1
(1) (2) (3)
MGS326
10−1
10−1
1
10 102
IC (mA)
VCE = 0.3 V.
(1) Tamb = −40 °C.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
Fig.6 Input-on voltage as a function of collector
current; typical values.
1999 May 06
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet PUMH9.PDF ] | |
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