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부품번호 PZT3904 기능
기능 NPN General Purpose Amplifier
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PZT3904 데이터시트, 핀배열, 회로
2N3904 / MMBT3904 / PZT3904
NPN General Purpose Amplifier
Features
• This device is designed as a general purpose amplifier and switch.
• The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier.
October 2011
2N3904
EB C
TO-92
MMBT3904
C
SOT-23
Mark:1A
E
B
PZT3904
C
SOT-223
E
C
B
Absolute Maximum Ratings* Ta = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
VCBO
VEBO
IC
TJ, Tstg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
40
60
6.0
200
-55 to +150
V
V
V
mA
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations.
Thermal Characteristics Ta = 25°C unless otherwise noted
Symbol
Parameter
2N3904
Max.
*MMBT3904 **PZT3904
Units
PD
Total Device Dissipation
Derate above 25°C
625
350
1,000
mW
5.0 2.8 8.0 mW/°C
RθJC
Thermal Resistance, Junction to Case
83.3
°C/W
RθJA
Thermal Resistance, Junction to Ambient
200
357
125 °C/W
* Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06".
** Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
© 2011 Fairchild Semiconductor Corporation
2N3904 / MMBT3904 / PZT3904 Rev. B0
1
www.fairchildsemi.com
http://www.Datasheet4U.com




PZT3904 pdf, 반도체, 판매, 대치품
Typical Performance Characteristics (continued)
Noise Figure vs Frequency
12
I C = 1.0 mA
10 R S = 200ΩΩ
I C = 50 μμAA
8 R S = 1.0 kkΩΩ
V CE = 5.0V
I C = 0.5 mA
6 R S = 200ΩΩ
4
2 I C = 100 μμAA, R S = 500 ΩΩ
0
0.1 1
10 100
f - FREQUENCY (kHz)
Current Gain and Phase Angle
vs Frequency
50
45 h fe
40
35
30
25 θθ
20
15
10 V CE = 40V
5 I C = 10 mA
0
1 10 100
f - FREQUENCY (MHz)
0
20
40
60
80
100
120
140
160
180
1000
Noise Figure vs Source Resistance
12
I C = 1.0 mA
10
I C = 5.0 mA
8
I C= 50 μμAA
6
4 I C= 100 μμAA
2
0
0.1 1 10 100
R S - SOURCE RESISTANCE ((kkΩΩ) )
Power Dissipation vs
Ambient Temperature
1
0.75
TO-92
SOT-223
0.5
SOT-23
0.25
0
0 25 50 75 100 125 150
TEMPERATURE (oC)
Turn-On Time vs Collector Current
500
IB1 = IB2 =
Ic
10
40V
100 15V
t r @ V CC = 3.0V
2.0V
10
t d @ VCB = 0V
5
1 10
100
I C - COLLECTOR CURRENT (mA)
Rise Time vs Collector Current
500
VCC = 40V
IB1 = IB2 =
Ic
10
100
T J = 125°C
T J = 25°C
10
5
1 10 100
I C - COLLECTOR CURRENT (mA)
© 2011 Fairchild Semiconductor Corporation
2N3904 / MMBT3904 / PZT3904 Rev. B0
4
www.fairchildsemi.com

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PZT3904 전자부품, 판매, 대치품
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Definition of Terms
Datasheet Identification
Advance Information
Preliminary First
No Identification Needed
Obsolete
Product Status
Formative / In Design
Production
Full Production
Not In Production
Definition
Datasheet contains the design specifications for product development. Specifications may change
in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
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Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I57
© Fairchild Semiconductor Corporation
www.fairchildsemi.com

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