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PZT751T1 데이터시트 PDF




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부품번호 PZT751T1 기능
기능 PNP Silicon Planar Epitaxial Transistor
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PZT751T1 데이터시트, 핀배열, 회로
PZT751T1
Preferred Device
PNP Silicon Planar
Epitaxial Transistor
This PNP Silicon Epitaxial transistor is designed for use in
industrial and consumer applications. The device is housed in the
SOT223 package which is designed for medium power surface
mount applications.
Features
High Current: 2.0 A
The SOT223 Package can be soldered using wave or reflow.
SOT223 package ensures level mounting, resulting in improved
thermal conduction, and allows visual inspection of soldered joints.
The formed leads absorb thermal stress during soldering, eliminating
the possibility of damage to the die
www.DataSheeNtP4NUC.coommplement is PZT651T1
PbFree Package is Available
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
CollectorEmitter Voltage
CollectorBase Voltage
EmitterBase Voltage
Collector Current
Total Power Dissipation
Derate above 25°C
@
TA
=
25°C(1)
VCEO
VCBO
VEBO
IC
PD
60 Vdc
80 Vdc
5.0 Vdc
2.0 Adc
0.8 W
6.4 mW/°C
Storage Temperature Range
Junction Temperature
THERMAL CHARACTERISTICS
Tstg 65 to 150 °C
TJ 150 °C
Rating
Symbol Value
Unit
Thermal Resistance from Junctionto
Ambient in Free Air
RqJA
156
°C/W
Maximum Temperature for Soldering TL 260 °C
Purposes
Time in Solder Bath
10 Sec
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Device mounted on a FR4 glass epoxy printed circuit board using minimum
recommended footprint.
http://onsemi.com
SOT223 PACKAGE
HIGH CURRENT
PNP SILICON TRANSISTOR
SURFACE MOUNT
COLLECTOR 2, 4
BASE
1
EMITTER 3
MARKING
DIAGRAM
TO261AA
CASE 318E
STYLE 1
D
ZT 751
ZT 751 = Specific Device Code
D = Date Code
ORDERING INFORMATION
Device
Package
Shipping
PZT751T1
SOT223 1000 / Tape & Reel
PZT751T1G
SOT223 1000 / Tape & Reel
(PbFree)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
Semiconductor Components Industries, LLC, 2004
January, 2004 Rev. 4
1
Publication Order Number:
PZT751T1/D




PZT751T1 pdf, 반도체, 판매, 대치품
PZT751T1
NPN
1.0
0.9
0.8 TJ = 25°C
0.7
0.6
0.5
0.4
0.3 IC = 10 mA IC = 100 mA IC = 500 mA IC = 2.0 A
0.2
0.1
0
0.05 0.1 0.2
0.5 1.0 2.0 5.0 10 20
IB, BASE CURRENT (mA)
50 100 200 500
Figure 5. Collector Saturation Region
PNP
−1.0
−0.9
−0.8 TJ = 25°C
−0.7
−0.6
−0.5
−0.4
−0.3
IC = −500 mA
IC = −2.0 A
−0.2
−0.1 IC = −10 mA IC = −100 mA
0
−0.05 −0.1 −0.2 −0.5 −1.0 −2.0 −5.0 −10 −20
IB, BASE CURRENT (mA)
−50 −100 −200 −500
Figure 6. Collector Saturation Region
www.DataSheet140 U.com
NPN
4.0
2.0
1.0
0.5
0.2
0.1
0.05
0.02
0.01
1.0
TA = 25°C
1.0 ms
MPS65
0
MPS65
1
TC = 25°C
100 ms
WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
2.0 5.0 10 20
50
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 7. Safe Operating Area
100
PNP
−10
−4.0
−2.0
−1.0
−0.5
−0.2
−0.1
−0.05
−0.02
−0.01
−1.0
TA = 25°C
1.0 ms
MPS75
MP0S75
1
TC = 25°C
100 ms
WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
−2.0 −5.0 −10 −20
−50
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 8. Safe Operating Area
−100
http://onsemi.com
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관련 데이터시트

부품번호상세설명 및 기능제조사
PZT751T1

PNP Silicon Planar Epitaxial Transistor

ON Semiconductor
ON Semiconductor
PZT751T1

SOT-223 PACKAGE HIGH CURRENT PNP SILICON TRANSISTOR SURFACE MOUNT

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