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Q2008VH3 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 Q2008VH3
기능 Alternistor Triacs
제조업체 Teccor Electronics
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Q2008VH3 데이터시트, 핀배열, 회로
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*TO-218
*TO-220
*TO-218X
TO-263
D2Pak
TO-252
D-Pak
TO-251
V-Pak
MT2
MT1
G
(6 A to 40 A)
E4
General Description
Teccor offers bidirectional alternistors with current ratings from
6 A to 40 A and voltages from 200 V to 1000 V as part of Teccor's
broad line of thyristors. Teccor's alternistor is specifically
designed for applications that switch highly inductive loads.
A special chip offers the same performance as two thyristors
(SCRs) wired inverse parallel (back-to-back), providing better
turn-off behavior than a standard triac. An alternistor may be trig-
gered from a blocking to conduction state for either polarity of
applied AC voltage with operating modes in Quadrants I, II,
and III.
This new chip construction provides two electrically separate
SCR structures, providing enhanced dv/dt characteristics while
retaining the advantages of a single-chip device.
All alternistors have glass-passivated junctions to ensure long-
term reliability and parameter stability. Teccor's glass-passivated
junctions offer a reliable barrier against junction contamination.
Teccor's TO-218X package is designed for heavy, steady power-
handling capability. It features large eyelet terminals for ease of
soldering heavy gauge hook-up wire. All the isolated packages
have a standard isolation voltage rating of 2500 V rms.
Variations of devices covered in this data sheet are available for
custom design applications. Consult the factory for further
information.
Features
• High surge current capability
• Glass-passivated junctions
• 2500 V ac isolation for L, J, and K Packages
• High commutating dv/dt
• High static dv/dt
©2002 Teccor Electronics
Thyristor Product Catalog
E4 - 1
http://www.teccor.com
+1 972-580-7777




Q2008VH3 pdf, 반도체, 판매, 대치품
Alternistor Triacs
Data Sheets
IT(RMS)
(4)(16)
Isolated
Part Number
A
A
Non-isolated
MT2
MT2
G
MAX
16 A
25 A
30 A
35 A
40 A
MT1
G
MT2
T0-220
Q2016LH3
Q4016LH3
Q6016LH3
Q8016LH3
QK016LH3
Q2016LH4
Q4016LH4
Q6016LH4
Q8016LH4
QK016LH4
Q2016LH6
Q4016LH6
Q6016LH6
Q8016LH6
QK016LH6
Q2025L6
Q4025L6
Q6025L6
Q8025L6
QK025L6
Q2030LH5
Q4030LH5
Q6030LH5
K AG
TO-218
(16)
KG
A
TO-218X
MT1
G
MT2
TO-220
See “Package Dimensions” section for variations. (11)
Q2016RH3
Q4016RH3
Q6016RH3
Q8016RH3
QK016RH3
Q2016RH4
Q4016RH4
Q6016RH4
Q8016RH4
QK016RH4
Q2016RH6
Q4016RH6
Q6016RH6
Q8016RH6
QK016RH6
Q2025K6
Q2025J6
Q2025R6
Q4025K6
Q4025J6
Q4025R6
Q6025K6
Q6025J6
Q6025R6
Q8025K6
Q8025J6
Q8025R6
QK025K6
QK025R6
Q2040K7
Q4040K7
Q6040K7
Q8040K7
QK040K7
Q2040J7
Q4040J7
Q6040J7
Q8040J7
Q2035RH5
Q4035RH5
Q6035RH5
MT2
MT1
TO-263
D2Pak
Q2016NH3
Q4016NH3
Q6016NH3
Q8016NH3
QK016NH3
Q2016NH4
Q4016NH4
Q6016NH4
Q8016NH4
QK016NH4
Q2016NH6
Q4016NH6
Q6016NH6
Q8016NH6
QK016NH6
Q2025NH6
Q4025NH6
Q6025NH6
Q8025NH6
QK025NH6
Q2035NH5
Q4035NH5
Q6035NH5
See “General Notes” and “Electrical Specification Notes” on page E4 - 5.
VDRM
(1)
Volts
200
400
600
800
1000
200
400
600
800
1000
200
400
600
800
1000
200
400
600
800
1000
200
400
600
200
400
600
200
400
600
800
1000
IGT
(3) (7) (15) (17)
mAmps
QI QII QIII
MAX
20 20 20
20 20 20
20 20 20
20 20 20
20 20 20
35 35 35
35 35 35
35 35 35
35 35 35
35 35 35
80 80 80
80 80 80
80 80 80
80 80 80
80 80 80
80 80 80
80 80 80
80 80 80
80 80 80
80 80 80
50 50 50
50 50 50
50 50 50
50 50 50
50 50 50
50 50 50
100 100 100
100 100 100
100 100 100
100 100 100
100 100 100
Test Conditions
di/dt — Maximum rate-of-change of on-state current
dv/dt — Critical rate-of-rise of off-state voltage at rated VDRM gate open
dv/dt(c) — Critical rate-of-rise of commutation voltage at rated VDRM
and IT(RMS) commutating di/dt = 0.54 rated IT(RMS)/ms; gate
unenergized
I2t — RMS surge (non-repetitive) on-state current for period of 8.3 ms
for fusing
IDRM — Peak off-state current gate open; VDRM = maximum rated value
IGT — DC gate trigger current in specific operating quadrants;
VD = 12 V dc
IGTM — Peak gate trigger current
IH — Holding current (DC); gate open
IT(RMS) — RMS on-state current conduction angle of 360°
ITSM — Peak one-cycle surge
PG(AV) — Average gate power dissipation
PGM — Peak gate power dissipation; IGT £ IGTM
tgt — Gate controlled turn-on time; IGT = 300 mA with 0.1 µs rise time
VDRM — Repetitive peak blocking voltage
VGT — DC gate trigger voltage; VD = 12 V dc
VTM — Peak on-state voltage at maximum rated RMS current
http://www.teccor.com
+1 972-580-7777
E4 - 4
©2002 Teccor Electronics
Thyristor Product Catalog

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Q2008VH3 전자부품, 판매, 대치품
Data Sheets
Alternistor Triacs
130
10A TO-220 (NON-ISOLATED)
120 AND D2 PAK
110 12A TO-220 (ISOLATED)
100
6A TO-220
90
(NON-ISOLATED)
AND D2 PAK
6A TO-220 (ISOLATED)
80
70
60
0
0
CURRENT WAVEFORM: Sinusoidal
LOAD: Resistive or Inductive
˚CONDUCTION ANGLE: 360
CASE TEMPERATURE: Measured as
shown on Dimensional Drawing
2 4 6 8 10 12
RMS On-State Current [lT(RMS)] - AMPS
14
Figure E4.1 Maximum Allowable Case Temperature versus
On-state Current (6 A to 12 A)
130
12 A TO-220 (Non-isolated)
120 and TO-263
110 10 A TO-220 (Isolated)
100
8 A TO-220 (Isolated)
90
8 A TO-220 (Non-isolated),
80 TO-263, TO-251, and TO-252
70
60
0
0
CURRENT WAVEFORM: Sinusoidal
LOAD: Resistive or Inductive
CONDUCTION ANGLE: 360˚
CASE TEMPERATURE: Measured as
shown on Dimensional Drawing
2 4 6 8 10 12
RMS On-state Current [lT(RMS)] – Amps
Figure E4.2 Maximum Allowable Case Temperature versus
On-state Current (8 A to 12 A)
14
130
120
110
100
90
16A1T6OA -T2O20-2(2N0o(nIs-iosloaltaetde)d) and TO-263
80
70
CURRENT WAVEFORM: Sinusoidal
LOAD: Resistive or Inductive
CONDUCTION ANGLE: 360˚
60 CASE TEMPERATURE: Measured as
shown on Dimensional Drawing
0
0 5 10 15
RMS On-state Current [IT(RMS)] – Amps
Figure E4.3 Maximum Allowable Case Temperature versus
On-state Current (16 A)
130
120
110
100
25 A and 30 A
90 TO-220 (Isolated)
80
25 A TO-220 (Non-isolated)
70 TO-218 (Isolated)
TO-263
60
CURRENT WAVEFORM: Sinusoidal
LOAD: Resistive or Inductive
CONDUCTION ANGLE: 360˚
CASE TEMPERATURE: Measured as
shown on Dimensional Drawing
35 A TO-220 (Non-isolated)
and TO-263
40 A TO-218
(Isolated)
50
0
10
20 25
30
40
RMS On-state Current [lT(RMS)] – Amps
50
Figure E4.4 Maximum Allowable Case Temperature versus
On-state Current (25 A to 40 A)
20
18
16 TC = 25 ˚C
14
12 6 A to 12 A Devices
10
8
6
4
2
0
0 0.6 0.8 1.0 1.2 1.4 1.6
Positive or Negative Instantaneous
On-state Voltage (vT) – Volts
Figure E4.5 On-state Current versus On-state Voltage (Typical)
(6 A to 12 A)
90
80
TC = 25˚C
70
60
40 A Devices
50
40
25 A to 35 A Devices
30
20
16 A Devices
10
0
0 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Positive or Negative Instantaneous On-state Voltage (v ) – Volts
T
Figure E4.6 On-state Current versus On-state Voltage (Typical)
(16 A to 40 A)
©2002 Teccor Electronics
Thyristor Product Catalog
E4 - 7
http://www.teccor.com
+1 972-580-7777

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Q2008VH3

Alternistor Triacs

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