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PDF IL216AT Data sheet ( Hoja de datos )
| Número de pieza | IL216AT | |
| Descripción | PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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IL215AT/216AT/217AT
PHOTOTRANSISTOR
SMALL OUTLINE
SURFACE MOUNT OPTOCOUPLER
FEATURES
• High Current Transfer Ratio, IF=1 mA
IL215AT, 20% Minimum
IL216AT, 50% Minimum
IL217AT, 100% Minimum
• Isolation Voltage, 2500 VACRMS
• Electrical Specifications Similar to
Standard 6 Pin Coupler
• Industry Standard SOIC-8 Surface
Mountable Package
• Standard Lead Spacing, .05"
• Available in Tape and Reel (suffix T)
(Conforms to EIA Standard RS481A)
• Compatible with Dual Wave, Vapor Phase
and IR Reflow Soldering
• Underwriters Lab File #E52744
(Code Letter P)
DESCRIPTION
The IL215AT/216AT/217AT is an optically coupled
pair with a Gallium Arsenide infrared LED and a
silicon NPN phototransistor. Signal information,
including a DC level, can be transmitted by the
device while maintaining a high degree of electrical
isolation between input and output. The IL215AT/
216AT/217AT comes in a standard SOIC-8 small
outline package for surface mounting which makes
it ideally suited for high density applications with
limited space. In addition to eliminating through-
holes requirements, this package conforms to
standards for surface mounted devices.
The high CTR at low input current is designed for
low power consumption requirements such as
CMOS microprocessor interfaces.
Maximum Ratings
Emitter
Peak Reverse Voltage ............................................ 6.0 V
Continuous Forward Current ............................... 60 mA
Power Dissipation at 25°C .................................. 90 mW
Derate Linearly from 25°C ............................ 1.2 mW/°C
Detector
Collector-Emitter Breakdown Voltage ..................... 30 V
Emitter-Collector Breakdown Voltage ....................... 7 V
Collector-Base Breakdown Voltage ........................ 70 V
Power Dissipation ............................................. 150 mW
Derate Linearly from 25°C ............................ 2.0 mW/°C
Package
Total Package Dissipation at 25°C Ambient
(LED + Detector) ........................................... 280 mW
Derate Linearly from 25°C ............................ 3.3 mW/°C
Storage Temperature .......................... –55°C to +150°C
Operating Temperature ...................... –55°C to +100°C
Soldering Time at 260°C .................................... 10 sec.
Package Dimensions in Inches (mm)
.120±.005
(3.05±.13)
.240
(6.10)
Pin One ID
.192±.005
(4.88±.13)
Anode 1
CL
.154±.005
(3.91±.13)
Cathode 2
NC 3
NC 4
.016 (.41)
.015±.002
(.38±.05)
40°
8 NC
7 Base
6 Collector
5 Emitter
7°
.058±.005
(1.49±.13)
.004 (.10)
.008 (.20)
.008 (.20)
5° max.
.125±.005
(3.18±.13)
.050 (1.27)
typ.
.021 (.53)
.020±.004
(.15±.10)
2 plcs.
R.010
(.25) max.
Lead
Coplanarity
±.0015 (.04)
max.
TOLERANCE: ±.005 (unless otherwise noted)
Characteristics (TA=25°C)
Symbol Min. Typ.
Emitter
Forward Voltage
Reverse Current
Capacitance
Detector
VF
IR
CO
1.0
0.1
25
Breakdown Voltage
Collector-Emitter
Emitter-Collector
Collector-Emitter
BVCEO 30
BVECO 7
Dark Current
Collector-Emitter
ICEOdark
5
Capacitance
Package
CCE
10
DC Current Transfer CTRDC
IL215AT
IL216AT
IL217AT
Collector-Emitter
Saturation Voltage
Isolation Test
Voltage
Capacitance,
Input to Output
Resistance,
Input to Output
Switching Time
20 50
50 80
100 130
VCE sat
VIO 2500
CIO 0.5
RIO
tON, tOFF
100
3.0
Specifications subject to change.
Max. Unit
1.5 V
100 µA
pF
Condition
IF=1 mA
VR=6.0 V
VR=0
V
V
50 nA
pF
%
IC=10 µA
IE=10 µA
VCE=10 V,
IF =0
VCE=0
IF=1 mA
VCE=5 V
IC=0.1 mA,
0.4 IF=1 mA
VACRMS
pF
GΩ
µs IC=2 mA,
RE=100 Ω,
VCE=10 V
Semiconductor Group
4–7
10.95
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet IL216AT.PDF ] | |
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