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부품번호 | BTB06-600TWRG 기능 |
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기능 | SNUBBERLESS/ LOGIC LEVEL & STANDARD | ||
제조업체 | ST Microelectronics | ||
로고 | |||
전체 6 페이지수
®
SNUBBERLESS™, LOGIC LEVEL & STANDARD
BTA/BTB06 Series
6A TRIACS
MAIN FEATURES:
Symbol
Value
Unit
IT(RMS)
6A
VDRM/VRRM
600 and 800
V
IG (Q1)
5 to 50
mA
DESCRIPTION
Suitable for AC switching operations, the BTA/
BTB06 series can be used as an ON/OFF function
in applications such as static relays, heating
regulation, induction motor starting circuits... or for
phase control in light dimmers, motor speed
controllers,...
The snubberless and logic level versions (BTA/
BTB...W) are specially recommended for use on
inductive loads, thanks to their high commutation
performances. By using an internal ceramic pad,
the BTA series provides voltage insulated tab
(rated at 2500V RMS) complying with UL
standards (File ref.: E81734)
A2
G
A1
A2
A1
A2
G
TO-220AB Insulated
(BTA06)
A1
A2
G
TO-220AB
(BTB06)
ABSOLUTE MAXIMUM RATINGS
Symbol
IT(RMS)
ITSM
I²t
dI/dt
IGM
PG(AV)
Tstg
Tj
Parameter
RMS on-state current (full sine wave)
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
I²t Value for fusing
Critical rate of rise of on-state current
IG = 2 x IGT , tr ≤ 100 ns
Peak gate current
TO-220AB
Tc = 110°C
TO-220AB Ins.
F = 50 Hz
Tc = 105°C
t = 20 ms
F = 60 Hz
t = 16.7 ms
tp = 10 ms
F = 120 Hz
Tj = 125°C
tp = 20 µs
Tj = 125°C
Average gate power dissipation
Tj = 125°C
Storage junction temperature range
Operating junction temperature range
Value
6
60
63
21
50
4
1
- 40 to + 150
- 40 to + 125
Unit
A
A
A²s
A/µs
A
W
°C
April 2002 - Ed: 5A
1/6
BTA/BTB06 Series
Fig. 1: Maximum power dissipation versus RMS
on-state current (full cycle).
P (W)
8
7
6
5
4
3
2
1 IT(RMS)(A)
0
0123456
Fig. 3: Relative variation of thermal impedance
versus pulse duration.
K=[Zth/Rth]
1E+0
Zth(j-c)
Fig. 2: RMS on-state current versus case
temperature (full cycle).
IT(RMS) (A)
7
6
5
4
3
2
1
0
0 25
BTB
BTA
Tc(°C)
50 75
100 125
Fig. 4: On-state characteristics (maximum
values).
ITM (A)
100
Tj max.
Vto = 0.85 V
Rd = 60 mΩ
Tj=Tj max
1E-1
Zth(j-a)
10
1E-2
1E-3
1E-2
tp(s)
1E-1 1E+0
1E+1
1E+2 5E+2
VTM(V)
1
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Fig. 5: Surge peak on-state current versus
number of cycles.
Fig. 6: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10ms, and corresponding value of I²t.
ITSM (A)
70
60
50
40
30
Repetitive
20 Tc=105°C
10
0
1
Non repetitive
Tj initial=25°C
Number of cycles
10 100
t=20ms
One cycle
ITSM (A), I²t (A²s)
1000
100
dI/dt limitation:
50A/µs
Tj initial=25°C
ITSM
1000
10
0.01
tp (ms)
0.10
1.00
I²t
10.00
4/6
4페이지 | |||
구 성 | 총 6 페이지수 | ||
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
BTB06-600TWRG | SNUBBERLESS/ LOGIC LEVEL & STANDARD | ST Microelectronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |