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PDF BTB16 Data sheet ( Hoja de datos )

Número de pieza BTB16
Descripción 16A TRIACS
Fabricantes ST Microelectronics 
Logotipo ST Microelectronics Logotipo



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No Preview Available ! BTB16 Hoja de datos, Descripción, Manual

BTA16, BTB16
T1610, T1635
16 A Snubberless™, logic level and standard Triacs
Features
Medium current Triac
Low thermal resistance with clip bonding
Low thermal resistance insulation ceramic for
insulated BTA
High commutation (4Q) or very high
commutation (3Q) capability
BTA series UL1557 certified (File ref: 81734)
RoHS ( 2002/95/EC) compliant
Insulated tab (BTA series, rated at 2500 VRMS)
Applications
Snubberless versions (BTA/BTB...W and
T1635) especially recommended for use on
inductive loads, because of their high
commutation performances
On/off or phase angle function in applications
such as static relays, light dimmers and
appliance motor speed controllers
A2
G
A1
A2
A1 A2
G
D2PAK
T1610G
T1635G
A2
A1
A2
G
TO-220AB
insulated
BTA16
A1
A2
G
TO-220AB
BTB16
Description
Available either in through-hole or surface-mount
packages, the BTA16, BTB16, T1610 and T1635
Triacs series are suitable for general purpose
mains power AC switching.
Table 1. Device summary
Symbol
Parameter
BTA16 (1)
IT(RMS)
On-state rms current
VDRM/VRRM Repetitive peak off-state voltage
IGT (Snubberless) Triggering gate current
IGT (logic level) Triggering gate current
IGT (standard) Triggering gate current
1. Insulated
16
600/800
35/50
10
25/50
TM: Snubberless is a trademark of STMicroelectronics
BTB16
16
600/800
35/50
10
25/50
T1610
16
600/800
-
10
-
T1635
16
600/800
35
-
-
March 2010
Doc ID 7471 Rev 9
1/10
www.st.com
10

1 page




BTB16 pdf
BTA16, BTB16, T1610, T1635
Characteristics
Figure 7. Non-repetitive surge peak on-state Figure 8. Relative variation of gate trigger
current for a sinusoidal
current
ITSM(A), I2t (A2s)
3000
dI/dt limitation:
50A/µs
1000
Tj initial=25°C
IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25°C]
2.5
holding current and latching current versus junction
temperature (typical values)
2.0
IGT
ITSM 1.5
IH & IL
1.0
I2t 0.5
100 pulse with width tp < 10 ms and corresponding value of I2t tp(ms)
0.0
Tj(°C)
0.01
0.10
1.00
10.00
-40 -20 0 20 40 60 80 100 120 140
Figure 9.
Relative variation of critical rate of Figure 10. Relative variation of critical rate of
decrease of main current versus
decrease of main current versus
(dV/dt)c (typical values)
(dV/dt)c (typical values)
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
2.0
Snubberless and Logic level types
1.8 SW
1.6 C
B
1.4
1.2 T1635/CW/BW
1.0
0.8
0.6
0.4
0.1
(dV/dt)c (V/µs)
1.0 10.0
100.0
(dI/dt)c [Tj] / (dI/dt)c [Tj specified]
6
5
4
3
2
1
Tj(°C)
0
0 25 50 75
Standard types
100 125
Figure 11. D2PAK thermal resistance junction to ambient versus copper surface under tab
(printed circuit board FR4, copper thickness: 35 µm)
Rth(j-a)(°C/W)
80
70
60
50
D2PAK
40
30
20
10
S(cm²)
0
0 4 8 12 16 20 24 28 32 36 40
Doc ID 7471 Rev 9
5/10

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